Laboratory protocols for testing the efficacy of commercial pit latrine additives

There is considerable national interest in the use of commercial microbially derived products for controlling the rate of accumulation of the contents of pit latrines. Manufacturers claim that some of these products can reduce accumulation rates, prevent the pit from ever filling up, or even result in decreases in pit contents volume. Prior to this research, there have been no scientific publications that have conclusively supported or refuted these claims.This project undertook to perform reproducible laboratory tests that would quantify the effect of commercial pit latrine additive products. Protocols were developed and tested on a range of different commercial products sold for their ability to control the rate of accumulation of pit latrine contents. The effect of commercial additives on mass loss from VIP sludge in 300 g honey jars was compared to mass loss from similar units subjected to no treatment and treatment with water.The purpose of these experiments was to separate and quantify the effect of micro-organisms or enzymes originating from commercial pit latrine additives from the effect of natural processes within the pit latrine sludge (including digestion by micro-organisms in the VIP sludge and dehydration) and the effects of other actions associated with treatment, such as the addition of water.Results indicated that insignificant mass loss occurred in all anaerobic test units, while significant mass loss occurred in all other test units. However, there was no statistically significant difference between any of the different treatments in the aerobic units. Investigation of analytical data from the test units indicated that mass loss in aerobic units was due to a combination of dehydration through evaporation of moisture and biological stabilisation processes, and that the latter were not significantly enhanced by the addition of commercial pit latrine products. It was concluded that there was no evidence to support claims that pit latrine additives could extend the life of a pit latrine

Technical benefits of energy storage and electricity interconnections in future British power systems

There are concerns that the GB (Great Britain) electricity system may not be able to fully absorb increasing levels of variable renewables with consequent implications for emission reduction targets. This study considers the technical benefits of additional energy storage and interconnections in future GB electricity systems. Initially a reference model of the GB electricity system was developed using the EnergyPLAN tool. The model was validated against actual data and was confirmed to accurately represent the GB electricity system. Subsequently, an analysis of four possible scenarios, for the years 2020 and 2030, has been performed and the maximum technically feasible wind penetration calculated. Finally, the level of interconnection and energy storage has been varied to assess the technical benefits to the operation of a 2030 GB electricity system. We conclude that increasing levels of interconnection and energy storage allow a further reduction in the primary energy supply and an increase in maximum technically feasible wind penetration, permitting the system emissions intensity to be reduced from 483 gCO/kWh in 2012 to 113 gCO/kWh in 2030. Increasing the levels of interconnection and energy storage has significant technical benefits in the potential future GB systems considered

Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys

GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here, they present first results on PA-MBE growth and properties of N-rich GaNSb and InNAs alloys and compare these with GaNAs and GaNBi alloys. The enhanced incorporation of As and Sb was achieved by growing the layers at extremely low growth temperatures. Although layers become amorphous for high As, Sb, and Bi content, optical absorption measurements show a progressive shift of the optical absorption edge to lower energy. The large band gap range and controllable conduction and valence band positions of these HMAs make them promising materials for efficient solar energy conversion devices

Reorientation Transition in Single-Domain (Ga,Mn)As

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching.Comment: 4 pages, 4 figure

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.