Pump-probe experiments at 1.54 μm on silicon-rich silicon oxide waveguides

Optical pump-probe measurements were performed on slab waveguides containing excess silicon in the form of nanoclusters or nanocrystals and erbium. The measurements were performed by prism coupling a 1.54μm probe beam into a waveguide formed by silicon-rich oxide and monitoring its intensity and temporal response as the waveguide was optically pumped from above with a chopped 477nm excitation source. Induced absorption (losses) of the 1.54μm probe beam in erbium-doped and undoped silicon-rich silicon oxide waveguides was observed in all cases. For the samples containing only well-defined nanocrystals, a fast (∼60μs) induced absorption component associated with free carriers within the siliconnanocrystals is reported, while for samples containing defective nanocrystals or nanoclusters, a much slower (>10min) component is observed. The free carrier absorption is shown to be reduced by delaying the probe beam relative to the pump beam in cases where it dominates

On optical activity of Er⁺³ ions in Si-rich SiO₂ waveguides

Photoluminescence spectroscopy was used to explore the optical activity of Er³⁺ ions in Si-rich SiO₂waveguides prepared by ion implantation. Measurements were performed for a series of materials characterized by different Si excess levels, Er concentrations, and annealing temperatures. The highest fraction of optically active Er³⁺ ions which can be efficiently activated by nonresonant pumping was found to be 2.6%. This was realized in a waveguide with an Er concentration of [Er]=10¹⁸cm⁻³ and Si excess of 20%, annealed at 900°C. This optical activity level is insufficient to realize optical gain. It is therefore clear that further material improvement is needed before optical amplification in SiO₂:Er matrices sensitized by Si nanocrystals/nanoclusters can be achieved

Long-range surface polaritons in ultra-thin films of silicon

We present an experimental and theoretical study of the optical excitation of long-range surface polaritons supported by thin layers of amorphous silicon (a-Si). The large imaginary part of the dielectric constant of a-Si at visible and ultraviolet (UV) frequencies allows the excitation of surface polariton modes similar to long-range surface plasmon polaritons on metals. Propagation of these modes along considerable distances is possible because the electric field is largely excluded from the absorbing thin film. We show that by decreasing the thickness of the Si layer these excitations can be extended up to UV frequencies, opening the possibility to surface polariton UV optics compatible with standard Si technology

Multifaceted role of TREX2 in the skin defense against UV-induced skin carcinogenesis

TREX2 is a 3'-DNA exonuclease specifically expressed in keratinocytes. Here, we investigated the relevance and mechanisms of TREX2 in ultraviolet (UV)-induced skin carcinogenesis. TREX2 expression was up-regulated by chronic UV exposure whereas it was de-regulated or lost in human squamous cell carcinomas (SCCs). Moreover, we identified SNPs in the TREX2 gene that were more frequent in patients with head and neck SCCs than in healthy individuals. In mice, TREX2 deficiency led to enhanced susceptibility to UVB-induced skin carcinogenesis which was preceded by aberrant DNA damage removal and degradation as well as reduced inflammation. Specifically, TREX2 loss diminished the up-regulation of IL12 and IFNγ, key cytokines related to DNA repair and antitumor immunity. In UV-treated keratinocytes, TREX2 promoted DNA repair and passage to late apoptotic stages. Notably, TREX2 was recruited to low-density nuclear chromatin and micronuclei, where it interacted with phosphorylated H2AX histone, which is a critical player in both DNA repair and cell death. Altogether, our data provide new insights in the molecular mechanisms of TREX2 activity and establish cell autonomous and non-cell autonomous functions of TREX2 in the UVB-induced skin response