Current noise in resonance tunnel diodes based on InGaAlAs heterostructures

Noise in resonance tunnel diodes based on InGaAlAs structures is studied at two frequencies. A shot noise caused by the current flowing through two barriers of the heterostructure is identified. It was found that if the voltage across the structure is within the first ascending section of the current–voltage characteristics, the shot noise is suppressed with the suppression ratio G ~ 1/15. In the second ascending section of the current– voltage characteristic, the shot noise coincides with the shot noise of electrons passing through one barrier ( G = 1) by the order of magnitude. The specific features of current flow affecting the behavior of noise in the resonance tunnel structures are discussed

Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates

In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the sweeping applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples.Comment: 12 pages, 5 figure

Optoelectronic oscillators for communication systems

We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillator consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode. The RTD-based optoelectronic oscillator (OEO) has both optical and electrical input and output ports, with the fifth port allowing voltage control. The RTD-OEO locks to reference radio-frequency (RF) sources by either optical or electrical injection locking techniques allowing remote synchronization, eliminating the need of impedance matching between traditional RF oscillators. RTD-OEO functions include generation, amplification and distribution of RF carriers, clock recovery, carrier recovery, modulation and demodulation and frequency synthesis. Self-injection locking operation modes, where small portions of the output electrical/ optical signals are fed back into the electrical/optical input ports, are also proposed. The self-phase locked loop configuration can give rise to low-noise high-stable oscillations, not limited by the RF source performance and with no need of external optoelectronic conversion

A rare presentation of breast cancer

N/