A tunable, dual mode field-effect or single electron transistor

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel

Investigation of mobility enhancement effect in process-induced strained ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

International audienc

Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

International audienc

Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI

International audienc

Investigation of nonstationary transport and quantum effects in realistic deep submicrometerr partially depleted SOI technology

International audienceThe impact of nonstationary transport and quantum effects on performances of 0.1 $\mu$m partially depleted silicon-on-insulator (SOI) technology is investigated by 2D simulation on realistic devices. We analyze quantitatively the technology influence on the needed level for carrier transport modeling and we show which recipes must be used to evaluate performance of current devices. The original point is the investigation of technological parameters impact on injection velocity at source side and on drain current. We conclude that specific engineering of access region must be envisaged for taking full advantage of nonstationary effects on device performance

Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

International audienc

Performance Boosters for Advanced SOI CMOS.

International audienc

Z2-FET based ESD protections: innovative local clamps for UTBB FD-SOI Technology.

Session T3.3: Energy storage and power systemsInternational audienc

Performance Boosters for Advanced SOI CMOS.

International audienc

Z²-FET based ESD protections: innovative local clamps for UTBB FD-SOI Technology

International audienc