12 research outputs found

    Student Support for EIPBN 2010 Conference

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    The 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, 2010, held at the Egan Convention Center and Hilton in Anchorage, Alaska, June 1 to 4, 2010 was a great success in large part because financial support allowed robust participation from students. The conference brought together 444 engineers and scientists from industries and universities from all over the world to discuss recent progress and future trends. Among the emerging technologies that are within the scope of EIPBN is Nanofabrication for Energy Sources along with nanofabrication for the realization of low power integrated circuits. Every year, EIPBN provides financial support for students to attend the conference.The students gave oral and poster presentations of their research and many published peer reviewed articles in a special conference issue of the Journal of Vacuum Science and Technology B. The Department of Energy Office of Basic Energy Sciences supported 20 students from US universities with a $15,000

    Improved Electrophoretic Deposition of Vertical Single Wall Carbon Nanotubes with Nanoscopic Electrostatic Lenses

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    Under certain conditions, electrophoretic deposition (EPD) of single-wall carbon nanotubes (SWCNTs) onto metal at the base of nanoscale insulating windows can result in a single SWCNT per window, bonded at one end to the metal. During EPD charge, buildup on the insulator creates electrostatic lenses at the windows that control the trajectory of the SWCNTs. The aim is to develop a reproducible process for deposition of individual vertically oriented SWCNTs into each window to enable novel devices. The length of the SWCNTs is shown to be the most critical parameter in achieving results that could be used for devices. In particular, single nanotube deposition in windows by EPD was achieved with SWCNTs with lengths on the order of the window depth. By performing current vs voltage (IV) measurements against a platinum wire in a phosphate buffer and by modeling the data, the presence of the nanotube can be detected, the contact interface can be studied, and the nanotube’s viability for device applications can be determined. These results provide a basis for process integration of vertical SWCNTs using EPD

    Superconductivity Near 70 K in a New Family of Layered Copper Oxides

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    A new family of high-temperature superconductors is described, with the general formula Pb 2 Sr 2 ACu 3 O 8+δ . Although they have the planes of CuO 5 square pyramids characteristic of the other copper-oxide superconductors, the new compounds belong to a distinct structural series, with wide scope for elemental substitution. Their unusual electronic configuration also gives new insight into the role of charge distribution among the structural building blocks in controlling superconductivity

    Structure and Physical Properties of Single Crystals of the 84-K Superconductor Bi2.2Sr2Ca0.8Cu2O8+

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    Single crystal sof the 84-K superconductor Bi2.2Sr2Ca0.8Cu2O8+ were characterized by x-ray diffraction, dc magnetic susceptibility, electrical resistivity, and microwave absorption. The structure has [CuO2] planes separated by calcium atoms, edge-shared bismuth oxide double layers, and an incommensurate superlattice along b with a period of 4.76. The in-plane resistivity above Tc is linear in T, with RT=130 cm. Initial results on Pb substitution yielding Tc\u27s of 107 K are reported

    Studies of Oxygen-Deficient Ba2YCu3O7-Δ and Superconductivity Bi(Pb)SrCaCuO

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    Ambient temperature measurements of the crystallographic cell parameters for oxygen deficient Ba2YCu3O7-δ prepared by gettered annealing indicate the presence of microscopic differences in the oxygen configuration at fixed δ dependent on annealing temperature. The loss of superconductivity with increasing oxygen deficiency is shown to be due to a step-like increase in length of the plane copper-apical oxygen bond, and not to the orthorhombic to tetragonal transition. The crystal structure of the 84K superconductor Bi2Sr2CaCu2O8+δ is described, as is the stabilization of 110K superconductivity via partial Pb/Bi substitution with long time annealing
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