3 research outputs found
Suppressing Structural Relaxation in Nanoscale Antimony to Enable UltralowâDrift PhaseâChange Memory Applications
Abstract Phaseâchange randomâaccess memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phaseâchange materials (PCMs), which hinders current developments of highâcapacity memory and highâparallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTeâlike PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4Â nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of â10â4â10â3. This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the lessâdistorted octahedralâlike atomic configurations across the Sb/SiO2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressivelyâminiaturized PCRAM devices, to boost the storage and computing efficiencies substantially
Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change Memory
Kinetics Features Conducive to Cache-Type Nonvolatile Phase-Change Memor