Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure

Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

We demonstrate a contact design that allows four-terminal magnetotransport measurements of cleaved-edge overgrown two-dimensional electron and hole systems. By lithographically patterning and etching a bulk-doped surface layer, finger-shaped leads are fabricated, which contact the two-dimensional systems on the cleave facet. Both n- and p-type two-dimensional systems are demonstrated at the cleaved edge, using Si as either donor or acceptor, dependent on the growth conditions. Four-point measurements of both gated and modulation-doped samples yield fractional quantum Hall features for both n- and p-type, with several higher-order fractions evident in n-type modulation-doped samples.Comment: 3 pages, 3 figure

Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings

We measure an anomalous magnetoresistance peak within the lowest Landau level (nu = 1) minimum of a two-dimensional hole system on (110) GaAs. Self-consistent calculations of the valence band mixing show that the two lowest spin-index Landau levels anticross in a perpendicular magnetic field B consistent with where the experimental peak is measured, Bp. The temperature dependence of the anomalous peak height is interpreted as an activated behavior across this anticrossing gap. Calculations of the spin polarization in the lowest Landau levels predict a rapid switch from about -3/2 to +3/2 spin at the anticrossing. The peak position Bp is shown to be affected by the confinement electrostatics, and the utility of a tunable anticrossing position for spintronics applications is discussed.Comment: 4 pages, 4 figure

Baseline tests of the C. H. Waterman DAF electric passenger vehicle

An electric vehicle was tested as part of an Energy Research Development Administration (ERDA) project to characterize the state-of-the-art of electric vehicles. The Waterman vehicle performance test results are presented in this report. The vehicle is a converted four-passenger DAF 46 sedan. It is powered by sixteen 6-volt traction batteries through a three-step contactor controller actuated by a foot throttle to change the voltage applied to the 6.7 kW motor. The braking system is a conventional hydraulic braking system

Hybrid Quantum Dot-2D Electron Gas Devices for Coherent Optoelectronics

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using transport, AFM and optics -- finding narrow-linewidth optical dots and high-mobility, single subband 2D gases. Despite being buried 500 nm below the surface, the dots are clearly visible on AFM scans, allowing precise localization and paving the way towards a hybrid quantum system integrating optical dots with surface gate-defined nanostructures in the 2D gas.Comment: 4 pages, 5 figures (color