3,234 research outputs found
The structure of K- and Cs-monolayers on Cu(0 0 1): diffraction experiments far from the Bragg point
The intensity analysis along the crystal truncation rods has been used to analyse in situ the adsorption behaviour and the structure of K and Cs on Cu(0 0 1) at submonolayer coverages and room temperature. Up to about 0.25 ML K atoms adsorb in hollow sites followed by formation of a quasihexagonal superstructure. In contrast, for Cs adsorption the data can be interpreted by the formation of quasihexagonal Cs islands that grow with increasing coverage. For K an effective radius of 1.6(1) Å independent of coverage is determined. For Cs we fnd d = 2.1 (1) Å after formation of the quasihexagonal superstructure
Coverage-dependent adsorption sites for K/Cu(001) and Cs/Cu(001) determined by surface X-ray diffraction
Surface X-ray diffraction has been used to analyze in situ the room-temperature adsorption behaviour and the structure of K and Cs on Cu(100) at submonolayer coverages. Adsorption of K takes place in fourfold hollow sites up to coverages of about 0.25 monolayers (ML), where 1 ML corresponds to 1.53 × 1015 atoms/cm2. At higher coverages the formation of a quasi-hexagonal incommensurate adlayer is observed. In contrast, for Cs adsorption we observe from the very beginning the formation of the quasi-hexagonal structure up to the completion of the adlayer at about 0.30 ML. For K adsorption in the hollow sites we determine an adsorption height, d = 2.25(15) Å, corresponding to an effective K radius of reff = 1.6(1) Å close to the ionic radius of 1.33 Å. We do not observe a change in the effective radius as a function of coverage. For the quasi-hexagonal Cs structure we find an (average) adsorption height d = 2.94 Å corresponding to an effective radius of reff = 2.18 and 1.93 Å, for the limiting ca hollow- and bridge-site adsorption, respectively. The analysis of the superlattice reflections corresponding to the quasi-hexagonal incommensurate structures indicated that the K adlayer is strongly modulated. The first Fourier component of the substrate-induced modulation was determined to u01 = 1.29(3) Å. In contrast, for Cs/Cu(001) static modulation is much less important (u01 0.2 Å). Variation of the Cs adlayer density by changing the substrate temperature allows continuous expansion and contraction of the adsorbate unit cell. No commensurate-incommensurate transition has been observed
Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin
We measure the effective mass in a dilute two-dimensional electron system in
(111)-silicon by analyzing temperature dependence of the Shubnikov-de Haas
oscillations in the low-temperature limit. A strong enhancement of the
effective mass with decreasing electron density is observed. The mass
renormalization as a function of the interaction parameter r_s is in good
agreement with that reported for (100)-silicon, which shows that the relative
mass enhancement is system- and disorder-independent being determined by
electron-electron interactions only.Comment: As publishe
Learning with multiple representations: An example of a revision lesson in mechanics
We describe an example of learning with multiple representations in an
A-level revision lesson on mechanics. The context of the problem involved the
motion of a ball thrown vertically upwards in air and studying how the
associated physical quantities changed during its flight. Different groups of
students were assigned to look at the ball's motion using various
representations: motion diagrams, vector diagrams, free-body diagrams, verbal
description, equations and graphs, drawn against time as well as against
displacement. Overall, feedback from students about the lesson was positive. We
further discuss the benefits of using computer simulation to support and extend
student learning.Comment: 10 pages, 5 figures, 2 tables http://iopscience.iop.org/0031-912
Out of equilibrium electronic transport properties of a misfit cobaltite thin film
We report on transport measurements in a thin film of the 2D misfit Cobaltite
. Dc magnetoresistance measurements obey the modified
variable range hopping law expected for a soft Coulomb gap. When the sample is
cooled down, we observe large telegraphic-like fluctuations. At low
temperature, these slow fluctuations have non Gaussian statistics, and are
stable under a large magnetic field. These results suggest that the low
temperature state is a glassy electronic state. Resistance relaxation and
memory effects of pure magnetic origin are also observed, but without aging
phenomena. This indicates that these magnetic effects are not glassy-like and
are not directly coupled to the electronic part.Comment: accepted in Phys Rev B, Brief report
Characteristics of ferroelectric-ferroelastic domains in N{\'e}el-type skyrmion host GaVS
GaVS is a multiferroic semiconductor hosting N{\'e}el-type magnetic
skyrmions dressed with electric polarization. At T = 42K, the compound
undergoes a structural phase transition of weakly first-order, from a
non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral
structure at low temperatures. Below T, ferroelectric domains are formed
with the electric polarization pointing along any of the four axes. Although in this material the size and the shape of the
ferroelectric-ferroelastic domains may act as important limiting factors in the
formation of the N{\'e}el-type skyrmion lattice emerging below T=13\:K, the
characteristics of polar domains in GaVS have not been studied yet.
Here, we report on the inspection of the local-scale ferroelectric domain
distribution in rhombohedral GaVS using low-temperature piezoresponse
force microscopy. We observed mechanically and electrically compatible lamellar
domain patterns, where the lamellae are aligned parallel to the (100)-type
planes with a typical spacing between 100 nm-1.2 m. We expect that the
control of ferroelectric domain size in polar skyrmion hosts can be exploited
for the spatial confinement and manupulation of N{\'e}el-type skyrmions
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