Classifiying advanced concepts to assess device requirements for high efficiency solar cells

The efficiency of terrestrial solar energy conversion is fundamentally limited by the Landsberg limit of 93%. Single junction solar cells can, however, reach only about a third of this efficiency, a limitation first formulated by Shockley and Queisser [1]. Many concepts have been proposed to overcome this Shockley-Queisser (SQ) limit for single junction solar cells. In this contribution, we are going to explore the classification of these concepts according to the processes that occur in them and explain how this affects model-building for these devices and the requirements they have to fulfil

Photoluminescence-Based Current-Voltage Characterisation of Individual Subcells in Multi-Junction Devices

We demonstrate a photoluminescence based, contactless method to determine the current-voltage characteristics of the individual subcells in a multi-junction solar cell. The method, furthers known results for single junction devices and relies upon the reciprocity relation between the absorption and emission properties on a solar cell. Laser light with a suitable energy is used to excite carriers selectively in one junction and the internal voltages are deduced from the intensity of the resulting luminescence. The IV curves obtained this way on 1J, 2J and 6J devices are compared to those obtained using electroluminescence. Good agreement is obtained at high injection conditions while discrepancies at low injection are attributed to in-plane carrier transport

Comparative study of annealed and high temperature grown ITO and AZO films for solar energy applications

We present the optical and electrical properties of ITO and AZO films fabricated directly on silicon substrates under several growth and annealing temperatures, as well as their potential performance when used as low emissivity coatings in hybrid photovoltaic-thermal systems. We use broadband spectroscopic ellipsometry measurements (from 300 nm to 20 μm) to obtain a consistent model for the permittivity of each of the films. The best performance is found using the properties of the ITO film grown at 250 °C, with a state of the art resistivity of 0.2 mΩ-cm and an optimized thickness of 75 nm which leads to an estimated 50% increase in the extracted power compared to a standard diffused silicon solar cell. The Hall mobility and resistivity measurements of all the films are also provided, complementing and supporting the observed optical properties

Quantum Wire-on-Well (WoW) Cell With Long Carrier Lifetime for Efficient Carrier Transport

A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an In- GaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately 4 times as compared with a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same condition except for the substrate misorientation (0o- and 6o- off). The growth on a 6o-off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a wire-on-well structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice, and almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice

Photoluminescence upconversion at GaAs/InGaP2 interfaces driven by a sequential two-photon absorption mechanism

This paper reports on the results of an investigation into the nature of photoluminescence upconversion at GaAs/InGaP2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our sample proceeds via a sequential two-photon optical absorption mechanism. Measurements of photoluminescence and upconversion photoluminescence revealed evidence of the spatial localization of carriers in the InGaP2 material, arising from partial ordering of the InGaP2. We also observed the excitation of a two-dimensional electron gas at the GaAs/InGaP2 heterojunction that manifests as a high-energy shoulder in the GaAs photoluminescence spectrum. Furthermore, the results of upconversion photoluminescence excitation spectroscopy demonstrate that the photon energy onset of upconversion luminescence coincides with the energy of the two-dimensional electron gas at the GaAs/InGaP2 interface, suggesting that charge accumulation at the interface can play a crucial role in the upconversion process

Limiting efficiencies for intermediate band solar cells with partial absorptivity: the case for a quantum ratchet

The intermediate band solar cell (IBSC) concept aims to improve upon the Shockley–Queisser limit for single bandgap solar cells by also making use of below bandgap photons through sequential absorption processes via an intermediate band (IB). Current proposals for IBSCs suffer from low absorptivity values for transitions into and out of the IB. We therefore devise and evaluate a general, implementation‐independent thermodynamic model for an absorptivity‐constrained limiting efficiency of an IBSC to study the impact of absorptivity limitations on IBSCs. We find that, due to radiative recombination via the IB, conventional IBSCs cannot surpass the Shockley–Queisser limit at an illumination of one Sun unless the absorptivity from the valence band to the IB and the IB to the conduction band exceeds ≈36%. In contrast, the introduction of a quantum ratchet into the IBSC to suppress radiative recombination can enhance the efficiency of an IBSC beyond the Shockley–Queisser limit for any value of the IB absorptivity. Thus, the quantum ratchet could be the vital next step to engineer IBSCs that are more efficient than conventional single‐gap solar cells

Quantum wire-on-well (WoW) cell with long carrier lifetime for efficient carrier transport

A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately four times more than a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same conditions except for the substrate misorientation (0 and 6 ° off). The growth on a 6 ° off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces, whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a WoW structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice. Almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge, and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice

Singlet fission and tandem solar cells reduce thermal degradation and enhance lifespan

The economic value of a photovoltaic installation depends upon both its lifespan and power conversion efficiency. Progress toward the latter includes mechanisms to circumvent the Shockley-Queisser limit, such as tandem designs and multiple exciton generation (MEG). Here we explain how both silicon tandem and MEG-enhanced silicon cell architectures result in lower cell operating temperatures, increasing the device lifetime compared to standard c-Si cells. Also demonstrated are further advantages from MEG enhanced silicon cells: (i) the device architecture can completely circumvent the need for current-matching; and (ii) upon degradation, tetracene, a candidate singlet fission (a form of MEG) material, is transparent to the solar spectrum. The combination of (i) and (ii) mean that the primary silicon device will continue to operate with reasonable efficiency even if the singlet fission layer degrades. The lifespan advantages of singlet fission enhanced silicon cells, from a module perspective, are compared favorably alongside the highly regarded perovskite/silicon tandem and conventional c-Si modules

Semiconductor nanostructure quantum ratchet for high efficiency solar cells

Conventional solar cell efficiencies are capped by the ~31% Shockley–Queisser limit because, even with an optimally chosen bandgap, some red photons will go unabsorbed and the excess energy of the blue photons is wasted as heat. Here we demonstrate a “quantum ratchet” device that avoids this limitation by inserting a pair of linked states that form a metastable photoelectron trap in the bandgap. It is designed both to reduce non-radiative recombination, and to break the Shockley–Queisser limit by introducing an additional “sequential two photon absorption” (STPA) excitation channel across the bandgap. We realise the quantum ratchet concept with a semiconductor nanostructure. It raises the electron lifetime in the metastable trap by ~104, and gives a STPA channel that increases the photocurrent by a factor of ~50%. This result illustrates a new paradigm for designing ultra-efficient photovoltaic devices