Manipulation of charge carrier injection into organic field-effect transistors by self-assembled monolayers of alkanethiols

Charge carrier injection into two semiconducting polymers is investigated in field-effect transistors using gold source and drain electrodes that are modified by self-assembled monolayers of alkanethiols and perfluorinated alkanethiols. The presence of an interfacial dipole associated with the molecular monolayer at the metal/semiconductor interface changes the work function of the electrodes, and, hence, the injection of the charge carriers. The FET characteristics are analysed with the transfer line method and the hole injection into poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) and regio-regular poly(3-hexyl)thiophene (rr-P3HT) is investigated. The device parameters are corrected for the contact resistances of the electrodes and the mobilities of the polymers (MEH-PPV, µFET = 4 × 10-4 cm2 V-1 s-1 and rr-P3HT, µFET = (1–2) × 10-2 cm2 V-1 s-1) are determined. The contact resistance obtained for the SAM-modified electrodes is at least one order of magnitude larger than for untreated contacts.

Extending the voltage window in the characterization of electrical transport of large-area molecular junctions

A large bias window is required to discriminate between different transport models in large-area molecular junctions. Under continuous DC bias, the junctions irreversibly break down at fields over 9 MV/cm. We show that, by using pulse measurements, we can reach electrical fields of 35 MV/cm before degradation. The breakdown voltage is shown to depend logarithmically on both duty cycle and pulse width. A tentative interpretation is presented based on electrolysis in the polymeric top electrode. Expanding the bias window using pulse measurements unambiguously shows that the electrical transport exhibits not an exponential but a power-law dependence on bias. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3608154

Foil-to-Foil System Integration Through Capillary Self-Alignment Directed by Laser Patterning

This paper introduces a new integration technology for cost-effective high-precision mechanical and electrical integration of mesoscopic functional foil components onto foil substrates. The foil-to-foil assembly process is based on topological surface structuring via laser patterning that enables accurate capillarity-driven self-alignment of foil dies. The concurrent establishment of high-yield electrical interconnections is obtained through conductive adhesives. The foil surface energy controls the acceptance window of initial offsets for optimal self-alignment performance. The proposed topological patterning and system design enable alignment accuracies for centimeter-sized foil dies as high as 15 µm, barely influenced by the evaporation of the assembly liquid and curing of the conductive paste. Full foil-to-foil system integration is demonstrated through the electrically functional assembly of an array of Au-sputtered capacitive humidity sensors onto a patterned base foil circuitry

Ambipolar charge transport in organic field-effect transistors

Published versio

Foil-to-foil interconnection of capacitive humidity sensors using electrically conductive adhesives

The present study presents the development and comparison of two foil-to-foil lamination and interconnection methods of foil-based capacitive humidity sensors. The first method uses confined anisotropic conductive adhesive (ICA) in laser ablated vias through foil (TFV). The second method uses anisotropic conductive adhesive (ACA). Both integration methods were characterized during accelerated humidity (85°C / 85 R.H.),shock temperature (-40°C / 125°C) and bending forces. While the ACA method requires less processing steps and the TFV method was shown to be more robust to bending forces, the interconnection of both methods withstood more than 900 hours of environmental ageing. Finally, the correct functionality of two types of foil-based capacitive humidity sensors was successfully demonstrated by exposing them to different R.H. levels and comparing their readings to a commercial sensor

Synthesis of Monochlorosilyl Derivatives of Dialkyloligothiophenes for Self-Assembling Mono layer Field-Effect Transistors

Unsymmetrical dimethylchlorosilyl-substituted α,α'-dialkylquater-, quinque-, and sexithiophenes were designed and successfully synthesized by a combination of Kumada and Suzuki cross-coupling reactions followed by hydrosilylation. Optimization possibilities of the hydrosilylation of low-soluble linear oligothiophenes by dimethylchlorosilane as well as the nonreactive byproducts formed are described. The molecular structures of the obtained dimethylchlorosilyl-functionalized oligothiophenes were proven by NMR and DCI MS techniques. These compounds were found to be stable and reactive enough, even in the presence of the nonreactive byproducts, to form semiconducting monolayers on dielectric hydroxylated SiO2 surfaces by self-assembly from solution. The semiconducting properties of these oligothiophene SAMs were as good as those of bulk oligothiophenes. This allowed the production of stable, even under ambient conditions, SAMFETs with a mobility of up to 0.04 cm2/(V s) and an on/off ratio up to 1 × 10^8.