Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions

The maximum optical gain and the spontaneous noise enhancement factor in quantum well structures are expressed as extremely simple functions that are accurate over a wide range of carrier densities. These expressions are used to study the effect of doping on the optical gain and the noise enhancement factor in a 100 Å InGaAs/InP quantum well structure. n-type doping is most effective in reducing the transparency excitation level (laser threshold) and the noise enhancement factor (amplifier noise figure), whereas p-type doping enables increased gain at a given excitation level

Early regulative ability of the neuroepithelium to form cardiac neural crest

The cardiac neural crest (arising from the level of hindbrain rhombomeres 6–8) contributes to the septation of the cardiac outflow tract and the formation of aortic arches. Removal of this population after neural tube closure results in severe septation defects in the chick, reminiscent of human birth defects. Because neural crest cells from other axial levels have regenerative capacity, we asked whether the cardiac neural crest might also regenerate at early stages in a manner that declines with time. Accordingly, we find that ablation of presumptive cardiac crest at stage 7, as the neural folds elevate, results in reformation of migrating cardiac neural crest by stage 13. Fate mapping reveals that the new population derives largely from the neuroepithelium ventral and rostral to the ablation. The stage of ablation dictates the competence of residual tissue to regulate and regenerate, as this capacity is lost by stage 9, consistent with previous reports. These findings suggest that there is a temporal window during which the presumptive cardiac neural crest has the capacity to regulate and regenerate, but this regenerative ability is lost earlier than in other neural crest populations

Monolithic Schottky diode imaging arrays at 94 GHz

Monolithic GaAs Schottky diode imaging arrays have been demonstrated at 69 and 94 GHz. In the 94 GHz experiments, the diodes are fabricated by a self-aligning technique on semi-insulating GaAs and are isolated by a combination of a mesa-etch process and proton-bombardment. The series resistance is 20 ω and the estimated capacitance is 15–20 fF. The antennas are planar bow-ties, and power is coupled in through a quartz lens placed on the back of the GaAs substrate. The wafer is lapped to 90 μm thick to eliminate losses to substrate modes. The measured system responsivity is 330 V/W. The 69 GHz diodes are made by a non-self-aligned process, and a silicon substrate lens is used

Cellular Therapy with Engineered T Cells, Efficacy and Side Effects

The cellular basis of cancer immune surveillance, already hypothesized in ancient times, was only demonstrated with the advent of HSCT. Indeed, the discovery of the nature of GVHD and its antileukemic effects (Weiden et al

Use Of A Surface-emitting Micro-laser Array For Optical Computing

Surface emitting microlaser arrays have many features that make them highly desirable for use in optical computing. In this talk, we will describe various applications of the novel device for optical computing, with emphasis on ,neural network implementations

Use Of A Surface-emitting Micro-laser Array For Optical Computing

Surface emitting microlaser arrays have many features that make them highly desirable for use in optical computing. In this talk, we will describe various applications of the novel device for optical computing, with emphasis on ,neural network implementations