Structure property relationship of suspension thermally sprayed WC-Co nanocomposite coatings.

Tribomechanical properties of nanostructured coatings deposited by suspension high velocity oxy-fuel (S-HVOF) and conventional HVOF (Jet Kote) spraying were evaluated. Nanostructured S-HVOF coatings were obtained via ball milling of the agglomerated and sintered WC-12Co feedstock powder, which were deposited via an aqueous-based suspension using modified HVOF (TopGun) process. Microstructural evaluations of these hardmetal coatings included transmission electron microscopy, x-ray diffraction, and scanning electron microscopy equipped with energy dispersive x-ray spectroscopy. The nanohardness and modulus of the coated specimens were investigated using a diamond Berkovich nanoindenter. Sliding wear tests were conducted using a ball-on-flat test rig. Results indicated that low porosity coatings with nanostructured features were obtained. High carbon loss was observed, but coatings showed a high hardness up to 1000 HV2.9N. S-HVOF coatings also showed improved sliding wear and friction behavior, which were attributed to nanosized particles reducing ball wear in three-body abrasion and support of metal matrix due to uniform distribution of nanoparticles in the coating microstructure

Inventory of current EU paediatric vision and hearing screening programmes

Background: We examined the diversity in paediatric vision and hearing screening programmes in Europe. Methods: Themes relevant for comparison of screening programmes were derived from literature and used to compile three questionnaires on vision, hearing and public-health screening. Tests used, professions involved, age and frequency of testing seem to influence sensitivity, specificity and costs most. Questionnaires were sent to ophthalmologists, orthoptists, otolaryngologists and audiologists involved in paediatric screening in all EU fullmember, candidate and associate states. Answers were cross-checked. Results: Thirty-nine countries participated; 35 have a vision screening programme, 33 a nation-wide neonatal hearing screening programme. Visual acuity (VA) is measured in 35 countries, in 71% more than once. First measurement of VA varies from three to seven years of age, but is usually before the age of five. At age three and four picture charts, including Lea Hyvarinen are used most, in children over four Tumbling-E and Snellen. As first hearing screening test otoacoustic emission (OAE) is used most in healthy neonates, and auditory brainstem response (ABR) in premature newborns. The majority of hearing testing programmes are staged; children are referred after one to four abnormal tests. Vision screening is performed mostly by paediatricians, ophthalmologists or nurses. Funding is mostly by health insurance or state. Coverage was reported as >95% in half of countries, but reporting was often not first-hand. Conclusion: Largest differences were found in VA charts used (12), professions involved in vision screening (10), number of hearing screening tests before referral (1-4) and funding sources (8)

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers Effect of inter-well coupling between 3C and 6H in-grown stacking faults in 4H-SiC epitaxial layers

Abstract. Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-wells coupling effects

A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

International audienceA transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-SiC substrate and 3C-SiC layer, where cubic and 4H-SiC sequences follow after each other is observed. A tendency for formation of multiple stacking faults (SFs) as opposed to the more common for fcc materials intrinsic (single) or extrinsic (double) SFs was observed. They rarely originate directly at the interface, but they are found to start on twin boundaries in some cases. Later during the CF-PVT growth process the density of SFs in the (111) and ((1) over bar 11) gradually increases. The ((1) over bar 1 1) SF density is the higher which leads to the formation of large 6H-SiC inclusions, extending to large lengths. (C) 2009 Elsevier B.V. All rights reserved

6H-type zigzag faults in low-doped 4H-SiC expitaxial layers

A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 41-1-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature

The influence of Tl4Bi2S5 precipitates on the crystalline TlBiS2 properties

Crystalline TlBiS2 having homogeneously distributed Tl4Bi2S5 precipitates was grown by the vertical Bridgman technique in a two-step procedure. X-rays and Transmission Electron Microscopy (TEM) studies were used to identify the as-grown material whereas a Scanning Electron Microscopy (SEM) examination revealed its layered structure. The electrical conductivity a was measured both along (sigma(parallel to)) and across (sigma(perpendicular to)) its layers. IR reflectivity measurements were also performed and the plasma minimum was determined. Both electrical and optical characterization show properties similar to those of TlBiS2 but a reduced N/m* ratio and an irregular voltage oscillation in the I-U characteristics were deduced. Combining the results from these investigations a possible explanation was proposed