The interactions between SATB1 and F-actin are important for mechanisms of active cell death

Introduction. The direct involvement of nuclear actin filaments in gene transcription and remodeling of chromatin is still debatable. However, nuclear localization of F-actin and its interactions with other nuclear matrix proteins have been reported. The aim of the study was to estimate the interactions between nuclear F-actin and one of the matrix proteins, special AT-rich sequence-binding protein 1 (SATB1), during active cell death induced in vitro by geldanamycin (GA). Material and methods. The expression of SATB1 was modified by the transfection of non-aggressive breast cancer MCF-7 cells with siRNA against SATB1 or expression plasmid with cloned cDNA of SATB1. The amount and localization of F-actin were altered by changes of cofilin-1 (CFL1) expression in MCF-7 cells. The association between SATB1 and F-actin during GA-induced cell death was analyzed using confocal and transmission electron microscopy. Results. Our studies revealed the colocalization between nuclear F-actin and SATB1 protein, during GA-induced death of breast cancer MCF-7 cells. The colocalization was enhanced in cells with overexpressed SATB1 and cofilin-1. At the ultrastructural level the SATB1 and F-actin complexes were seen at the border of condensed and decondensed chromatin. The presence of SATB1/F-actin molecular complexes was confirmed by magnetic separation of F-actin and interacting proteins. Conclusion. We suggest that the molecular interactions between SATB1 and F-actin are necessary for active cell death to occur

Microstructure of nanocrystalline diamond powders studied by powder diffractometry

High resolution x-ray diffraction peaks of diamond nanosize powders of nominal sizes ranging from 5 to 250 nm were analyzed and provided information on grain structure, average size of crystallites, and concentration of dislocations. Selected samples were heat treated at 1670 K at pressures 2.0 and 5.5 GPa or had surface modified by outgassing, heat treatment at vacuum conditions, and by controlled adsorption of gases. The apparent lattice parameter method was applied to characterize the structure of a shell-core model of nanosize particles. The multiple whole profile fitting provided information on crystallite sizes and density of dislocations. Population of dislocations increased with applied pressure, while strain and interplanar distances in the surface layers decreased. Adsorption of foreign gases on the grain surface modified the structure of the surface layers but did not affect dislocations near the center of the grains

Nasal Septum Deviation by Age and Sex in a Study Population of Poles

Introduction: Nasal septum deviation is found in nearly 79% of all autopsies. A displacement of the nasal septum is caused by developmental disorders, which result in growth disproportions between different skeletal structures, as well as hereditary factors, and injuries to the nose and the facial skeleton.Aims: This study aims is to estimate the incidence of nasal septum deviation in a study population of Poles, with a breakdown by age and sex.Subjects and method(s): The people involved in the study were a group of 950 randomly selected residents of a large city. The subjects were aged between 6 and 76 years. The method used in the study was anterior rhinoscopy in combination with clinical history taking. Results: The investigation revealed that the number of cases of nasal septum deviation diagnosed on the basis of anterior rhinoscopy increases steadily with age, from 15% in children aged 7-8 years to 39.7% in adults (p<0.05). The results of the study show that men are more frequently diagnosed with nasal septum deviations than women are (p<0.05).Conclusions: A relatively large percentage of nasal septum deviations was observed in a population of Poles, with a breakdown by age and sex

Effect of Pressure on Synthesis of Pr-Doped Zirconia Powders Produced by Microwave-Driven Hydrothermal Reaction

A high-pressure microwave reactor was used to study the hydrothermal synthesis of zirconia powders doped with 1 mol % Pr. The synthesis was performed in the pressure range from 2 to 8 MPa corresponding to a temperature range from 215C∘ to 305C∘. This technology permits a synthesis of nanopowders in short time not limited by thermal inertia of the vessel. Microwave heating permits to avoid contact of the reactants with heating elements, and is thus particularly well suited for synthesis of doped nanopowders in high purity conditions. A mixture of ZrO2 particles with tetragonal and monoclinic crystalline phases, about 15 nm in size, was obtained. The p/T threshold of about 5-6 MPa/265–280C∘ was necessary to obtain good quality of zirconia powder. A new method for quantitative description of grain-size distribution was applied, which is based on analysis of the fine structure of the X-ray diffraction line profiles. It permitted to follow separately the effect of synthesis conditions on the grain-size distribution of the monoclinic and tetragonal phases

Effect of pressure on synthesis of Pr-doped zirconia powders produced by microwave-driven hydrothermal reaction

A high-pressure microwave reactor was used to study the hydrothermal synthesis of zirconia powders doped with 1 mol % Pr.The synthesis was performed in the pressure range from 2 to 8MPa corresponding to a temperature range from 215◦C to 305◦C.This technology permits a synthesis of nanopowders in short time not limited by thermal inertia of the vessel. Microwave heatingpermits to avoid contact of the reactants with heating elements, and is thus particularly well suited for synthesis of dopednanopowders in high purity conditions. A mixture of ZrO2 particles with tetragonal and monoclinic crystalline phases, about15nm in size, was obtained. The p/T threshold of about 5-6MPa/265–280◦C was necessary to obtain good quality of zirconiapowder. A new method for quantitative description of grain-size distribution was applied, which is based on analysis of the finestructure of the X-ray diffraction line profiles. It permitted to follow separately the effect of synthesis conditions on the grain-size distribution of the monoclinic and tetragonal phases

Nanocrystalline materials studied by powder diffraction line profile analysis

X-ray powder diffraction is a powerful tool for characterising the microstructure of crystalline materials in terms of size and strain. It is widely applied for nanocrystalline materials, especially since other methods, in particular electron microscopy is, on the one hand tedious and time consuming, on the other hand, due to the often metastable states of nanomaterials it might change their microstructures. It is attempted to overview the applications of microstructure characterization by powder diffraction on nanocrystalline metals, alloys, ceramics and carbon base materials. Whenever opportunity is given, the data provided by the X-ray method are compared and discussed together with results of electron microscopy. Since the topic is vast we do not try to cover the entire field

Distributed feedback InGaN/GaN laser diodes

We have realised InGaN/GaN distributed feedback laser diodes emitting at a single wavelength in the 42X nm wavelength range. Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow line width blue laser source can be used to target the atomic cooling transition. Previously, GaN DFB lasers have been realised using buried or surface gratings. Buried gratings require complex overgrowth steps which can introduce epi-defects. Surface gratings designs, can compromise the quality of the p-type contact due to dry etch damage and are prone to increased optical losses in the grating regions. In our approach the grating is etched into the sidewall of the ridge. Advantages include a simpler fabrication route and design freedom over the grating coupling strength.Our intended application for these devices is cooling of the Sr+ ion and for this objective the laser characteristics of SMSR, linewidth, and power are critical. We investigate how these characteristics are affected by adjusting laser design parameters such as grating coupling coefficient and cavity length

GaN-based distributed feedback laser diodes for optical communications

Over the past 20 years, research into Gallium Nitride (GaN) has evolved from LED lighting to Laser Diodes (LDs), with applications ranging from quantum to medical and into communications. Previously, off-the-shelf GaN LDs have been reported with a view on free space and underwater communications. However, there are applications where the ability to select a single emitted wavelength is highly desirable, namely in atomic clocks or in filtered free-space communications systems. To accomplish this, Distributed Feedback (DFB) geometries are utilised. Due to the complexity of overgrowth steps for buried gratings in III-Nitride material systems, GaN DFBs have a grating etched into the sidewall to ensure single mode operation, with wavelengths ranging from 405nm to 435nm achieved. The main motivation in developing these devices is for the cooling of strontium ions (Sr+) in atomic clock applications, but their feasibility for optical communications have also been investigated. Data transmission rates exceeding 1 Gbit/s have been observed in unfiltered systems, and work is currently ongoing to examine their viability for filtered communications. Ultimately, transmission through Wavelength Division Multiplexing (WDM) or Orthogonal Frequency Division Multiplexing (OFDM) is desired, to ensure that data is communicated more coherently and efficiently. We present results on the characterisation of GaN DFBs, and demonstrate their capability for use in filtered optical communications systems

Elastic Scattering and Total Cross-Section in p+p reactions measured by the LHC Experiment TOTEM at sqrt(s) = 7 TeV

Proton-proton elastic scattering has been measured by the TOTEM experiment at the CERN Large Hadron Collider at $\sqrt{s} = 7$ TeV in special runs with the Roman Pot detectors placed as close to the outgoing beam as seven times the transverse beam size. The differential cross-section measurements are reported in the |t|-range of 0.36 to 2.5 GeV^2. Extending the range of data to low t values from 0.02 to 0.33 GeV^2,and utilizing the luminosity measurements of CMS, the total proton-proton cross section at sqrt(s) = 7 TeV is measured to be (98.3 +- 0.2(stat) +- 2.8(syst)) mb.Comment: Proceedings of the XLI International Symposium on Multiparticle Dynamics. Accepted for publication in Prog. Theor. Phy

InGaN/GaN Laser Diodes and their Applications

Gallium nitride (GaN) laser diodes are becoming popular sources not only for lighting but for applications ranging from communications to quantum. This paper presents the use of a commercial, off-the-shelf laser diode, with an emission wavelength of 450 nm, for visible light communication, both in free space and for underwater scenarios. Data rates up to 15 Gbit/s have been achieved by making use of orthogonal frequency division multiplexing (OFDM). In addition, distributed feedback (DFB) lasers have been realised emitting at a single wavelength which lend themselves towards applications where high spectral purity is crucial such as atomic clocks or filtered free space transmission systems. These devices have the grating structure etched into the sidewall of the ridge and work is ongoing to measure the linewidth of these lasers with the intended application of cooling Sr+ ions