Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3

Among many Bechgaard salts, TMTSF2NO3 exhibits very anomalous low temperature properties. Unlike conventional spin density wave (SDW), TMTSF2NO3 undergoes the SDW transition at \T_SDW\approx 9.5 K and the low temperature quasiparticle excitations are gapless. Also, it is known that TMTSF2NO3 does not exhibit superconductivity even under pressure, while FISDW is found in TMTSF2NO3 only for P=8.5 kbar and B>20 T. Here we shall show that both the angle dependent magnetoresistance data and the nonlinear Hall resistance of TMTSF2NO3 at ambient pressure are interpreted satisfactory in terms of unconventional spin density wave (USDW). Based on these facts, we propose a new phase diagram for Bechgaards salts.Comment: 4 pages, 4 figs, RevTe

Influence of doping on the Hall coefficient in Sr_{14-x}Ca_xCu_24O_41

We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is one of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical semiconducting behavior for x < 11.5. However, for x=11.5, the results are completely different, and the Hall coefficient and resistivity behavior is qualitatively similar to that of high temperature copper-oxide superconductors. We have determined the effective number of carriers at room temperature and compared it to the number of holes in the ladders obtained by other experimental techniques. We propose that going from x=0 to x=11.5 less than 1 hole per formula unit is added to the ladders and is responsible for a pronounced change in resistivity with Ca doping.Comment: 8 pages, 7 figures, revised versio

The Hall effect in the organic conductor TTF-TCNQ: Choice of geometry for accurate measurements of highly anisotropic system

We have measured the Hall effect on recently synthesized single crystals of quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ) chains. The measurements were performed in the temperature interval 30 K < T < 300 K and for several different magnetic field and current directions through the crystal. By applying the equivalent isotropic sample (EIS) approach, we have demonstrated the importance of the choice of optimal geometry for accurate Hall effect measurements. Our results show, contrary to past belief, that the Hall coefficient does not depend on the geometry of measurements and that the Hall coefficient value is around zero in high temperature region (T > 150 K), implying that there is no dominance of either TTF or TCNQ chain. At lower temperatures, our measurements clearly prove that all three phase transitions of TTF-TCNQ could be identified from Hall effect measurements.Comment: Revised version; 7 pages, 5 figure

Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn

Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively studied by microwave and dc resistivity and magnetoresistivity and by the dc Hall measurements. The magnetic ordering temperature T_m is considerably reduced with increasing Sn content. However, doping with Sn leads to only slight reduction of the superconducting critical temperature T_c accompanied with the increase of the upper critical field B_c2, indicating an increased disorder in the system and a reduced scattering length of the conducting holes in CuO2 layers. In spite of the increased scattering rate, the normal state resistivity and the Hall resistivity are reduced with respect to the pure compound, due to the increased number of itinerant holes in CuO2 layers, which represent the main conductivity channel. Most of the electrons in RuO2 layers are presumably localized, but the observed negative magnetoresistance and the extraordinary Hall effect lead to the conclusion that there exists a small number of itinerant electrons in RuO$_2$ layers that exhibit colossal magnetoresistance.Comment: 10 pages, 9 figure

Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium

Strongly underdoped RuSr_1.9La_0.1GdCu_2O_8 has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron doping by La reduces the hole concentration in the CuO2 planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data indicate that the carrier concentration is reduced and a semiconductor-like temperature dependence is observed. Two magnetic ordering transitions are observed. The ruthenium sublattice orders antiferromagnetically at 155 K for low applied magnetic field and the gadolinium sublattice antiferromagnetically orders at 2.8 K. The magnetoresistivity exhibits a complicated temperature dependence due to the combination of the two magnetic orderings and spin fluctuations. It is shown that the ruthenium magnetism influences the conductivity in the RuO2 layers while the gadolinium magnetism influences the conductivity in the CuO2 layers. The magnetoresistivity is isotropic above 4 K, but it becomes anisotropic when gadolinium orders antiferromagnetically.Comment: 7 pages, 9 figures, submitted to European Physical Journal

High Mobility in LaAlO_3/SrTiO_3 Heterostructures: Origin, Dimensionality, and Perspectives

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (PO2<10-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics

Origin of Low-Energy Excitations in Charge-Ordered Manganites

The low-energy excitations in the charge-ordered phase of polycrystalline La0.25Ca0.75MnO3 are explored by frequency-domain terahertz spectroscopy. In the frequency range from 4 cm^-1 to 700 cm^-1 (energies 0.4 meV to 90 meV) and at temperatures down to 5 K, we do not detect any feature that can be associated with the collective response of the spatially modulated charge continuum. In the antiferromagnetically ordered phase, broad absorption bands appear in the conductivity and permittivity spectra around 30 cm^-1 and 100 cm^-1 which are assigned to former acoustic phonons optically activated due to a fourfold superstructure in the crystal lattice. Our results indicate that characteristic energies of collective excitations of the charge-ordered phase in La0:25Ca0:75MnO3, if any, lie below 1 meV. At our lowest frequencies of only few wavenumbers a strong relaxation is observed above 100 K connected to the formation of the charge-ordered state.Comment: 5 pages, 3 figure

Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)2I3

Electric-field-dependent pulse measurements are reported in the charge-ordered state of alpha-(BEDT-TTF)2I3. At low electric fields up to about 50 V/cm only negligible deviations from Ohmic behavior can be identified with no threshold field. At larger electric fields and up to about 100 V/cm a reproducible negative differential resistance is observed with a significant change in shape of the measured resistivity in time. These changes critically depend whether constant voltage or constant current is applied to the single crystal. At high enough electric fields the resistance displays a dramatic drop down to metallic values and relaxes subsequently in a single-exponential manner to its low-field steady-state value. We argue that such an electric-field induced negative differential resistance and switching to transient states are fingerprints of cooperative domain-wall dynamics inherent to two-dimensional bond-charge density wave with ferroelectric-like nature.Comment: 6 pages, 4 figures, resubmitted to Phys. Rev.

Point defect distribution in high-mobility conductive SrTiO3 crystals

We have carried out positron annihilation spectroscopy to characterize the spatial distribution and the nature of vacancy defects in insulating as-received as well as in reduced SrTiO3 substrates exhibiting high-mobility conduction. The substrates were reduced either by ion etching the substrate surfaces or by doping with vacancies during thin film deposition at low pressure and high temperature. We show that Ti-vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects are the same both in ion-etched and substrates reduced during the film growth, and they consist of non-homogeneous distributions of cation-oxygen vacancy complexes. Their spatial extension is tuned from a few microns in ion-etched samples to the whole substrate in specimens reduced during film deposition. Our results shed light on the transport mechanisms of conductive SrTiO3 crystals and on strategies for defect-engineered oxide quantum wells, wires and dots