34 research outputs found
Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3
Among many Bechgaard salts, TMTSF2NO3 exhibits very anomalous low temperature
properties. Unlike conventional spin density wave (SDW), TMTSF2NO3 undergoes
the SDW transition at \T_SDW\approx 9.5 K and the low temperature
quasiparticle excitations are gapless. Also, it is known that TMTSF2NO3 does
not exhibit superconductivity even under pressure, while FISDW is found in
TMTSF2NO3 only for P=8.5 kbar and B>20 T. Here we shall show that both the
angle dependent magnetoresistance data and the nonlinear Hall resistance of
TMTSF2NO3 at ambient pressure are interpreted satisfactory in terms of
unconventional spin density wave (USDW). Based on these facts, we propose a new
phase diagram for Bechgaards salts.Comment: 4 pages, 4 figs, RevTe
Influence of doping on the Hall coefficient in Sr_{14-x}Ca_xCu_24O_41
We present Hall-effect measurements of two-leg ladder compounds
Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of
carriers participating in dc transport. Distribution of holes between the
ladder and chain subsystems is one of the crucial questions important for
understanding the physics of these compounds. Our Hall effect and resistivity
measurements show typical semiconducting behavior for x < 11.5. However, for
x=11.5, the results are completely different, and the Hall coefficient and
resistivity behavior is qualitatively similar to that of high temperature
copper-oxide superconductors. We have determined the effective number of
carriers at room temperature and compared it to the number of holes in the
ladders obtained by other experimental techniques. We propose that going from
x=0 to x=11.5 less than 1 hole per formula unit is added to the ladders and is
responsible for a pronounced change in resistivity with Ca doping.Comment: 8 pages, 7 figures, revised versio
The Hall effect in the organic conductor TTF-TCNQ: Choice of geometry for accurate measurements of highly anisotropic system
We have measured the Hall effect on recently synthesized single crystals of
quasi-one-dimensional organic conductor TTF-TCNQ, a well known charge transfer
complex that has two kinds of conductive stacks: the donor (TTF) and the
acceptor (TCNQ) chains. The measurements were performed in the temperature
interval 30 K < T < 300 K and for several different magnetic field and current
directions through the crystal. By applying the equivalent isotropic sample
(EIS) approach, we have demonstrated the importance of the choice of optimal
geometry for accurate Hall effect measurements. Our results show, contrary to
past belief, that the Hall coefficient does not depend on the geometry of
measurements and that the Hall coefficient value is around zero in high
temperature region (T > 150 K), implying that there is no dominance of either
TTF or TCNQ chain. At lower temperatures, our measurements clearly prove that
all three phase transitions of TTF-TCNQ could be identified from Hall effect
measurements.Comment: Revised version; 7 pages, 5 figure
Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn
Ru{1-x}Sn{x}Sr2EuCu2O8 and Ru{1-x}Sn{x}Sr2GdCu2O8 have been comprehensively
studied by microwave and dc resistivity and magnetoresistivity and by the dc
Hall measurements. The magnetic ordering temperature T_m is considerably
reduced with increasing Sn content. However, doping with Sn leads to only
slight reduction of the superconducting critical temperature T_c accompanied
with the increase of the upper critical field B_c2, indicating an increased
disorder in the system and a reduced scattering length of the conducting holes
in CuO2 layers. In spite of the increased scattering rate, the normal state
resistivity and the Hall resistivity are reduced with respect to the pure
compound, due to the increased number of itinerant holes in CuO2 layers, which
represent the main conductivity channel. Most of the electrons in RuO2 layers
are presumably localized, but the observed negative magnetoresistance and the
extraordinary Hall effect lead to the conclusion that there exists a small
number of itinerant electrons in RuO layers that exhibit colossal
magnetoresistance.Comment: 10 pages, 9 figure
Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium
Strongly underdoped RuSr_1.9La_0.1GdCu_2O_8 has been comprehensively studied
by dc magnetization, microwave measurements, magnetoresistivity and Hall
resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron
doping by La reduces the hole concentration in the CuO2 planes and completely
suppresses superconductivity. Microwave absorption, dc resistivity and ordinary
Hall effect data indicate that the carrier concentration is reduced and a
semiconductor-like temperature dependence is observed. Two magnetic ordering
transitions are observed. The ruthenium sublattice orders antiferromagnetically
at 155 K for low applied magnetic field and the gadolinium sublattice
antiferromagnetically orders at 2.8 K. The magnetoresistivity exhibits a
complicated temperature dependence due to the combination of the two magnetic
orderings and spin fluctuations. It is shown that the ruthenium magnetism
influences the conductivity in the RuO2 layers while the gadolinium magnetism
influences the conductivity in the CuO2 layers. The magnetoresistivity is
isotropic above 4 K, but it becomes anisotropic when gadolinium orders
antiferromagnetically.Comment: 7 pages, 9 figures, submitted to European Physical Journal
High Mobility in LaAlO_3/SrTiO_3 Heterostructures: Origin, Dimensionality, and Perspectives
We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (PO2<10-5 mbar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics
Origin of Low-Energy Excitations in Charge-Ordered Manganites
The low-energy excitations in the charge-ordered phase of polycrystalline
La0.25Ca0.75MnO3 are explored by frequency-domain terahertz spectroscopy. In
the frequency range from 4 cm^-1 to 700 cm^-1 (energies 0.4 meV to 90 meV) and
at temperatures down to 5 K, we do not detect any feature that can be
associated with the collective response of the spatially modulated charge
continuum. In the antiferromagnetically ordered phase, broad absorption bands
appear in the conductivity and permittivity spectra around 30 cm^-1 and 100
cm^-1 which are assigned to former acoustic phonons optically activated due to
a fourfold superstructure in the crystal lattice. Our results indicate that
characteristic energies of collective excitations of the charge-ordered phase
in La0:25Ca0:75MnO3, if any, lie below 1 meV. At our lowest frequencies of only
few wavenumbers a strong relaxation is observed above 100 K connected to the
formation of the charge-ordered state.Comment: 5 pages, 3 figure
Cooperative dynamics in charge-ordered state of alpha-(BEDT-TTF)2I3
Electric-field-dependent pulse measurements are reported in the
charge-ordered state of alpha-(BEDT-TTF)2I3. At low electric fields up to about
50 V/cm only negligible deviations from Ohmic behavior can be identified with
no threshold field. At larger electric fields and up to about 100 V/cm a
reproducible negative differential resistance is observed with a significant
change in shape of the measured resistivity in time. These changes critically
depend whether constant voltage or constant current is applied to the single
crystal. At high enough electric fields the resistance displays a dramatic drop
down to metallic values and relaxes subsequently in a single-exponential manner
to its low-field steady-state value. We argue that such an electric-field
induced negative differential resistance and switching to transient states are
fingerprints of cooperative domain-wall dynamics inherent to two-dimensional
bond-charge density wave with ferroelectric-like nature.Comment: 6 pages, 4 figures, resubmitted to Phys. Rev.
Point defect distribution in high-mobility conductive SrTiO3 crystals
We have carried out positron annihilation spectroscopy to characterize the spatial distribution and the nature of vacancy defects in insulating as-received as well as in reduced SrTiO3 substrates exhibiting high-mobility conduction. The substrates were reduced either by ion etching the substrate surfaces or by doping with vacancies during thin film deposition at low pressure and high temperature. We show that Ti-vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects are the same both in ion-etched and substrates reduced during the film growth, and they consist of non-homogeneous distributions of cation-oxygen vacancy complexes. Their spatial extension is tuned from a few microns in ion-etched samples to the whole substrate in specimens reduced during film deposition. Our results shed light on the transport mechanisms of conductive SrTiO3 crystals and on strategies for defect-engineered oxide quantum wells, wires and dots