Magnetoresistance due to edge spin accumulation

Because of spin-orbit interaction, an electrical current is accompanied by a spin current resulting in spin accumulation near the sample edges. Due again to spin-orbit interaction this causes a small decrease of the sample resistance. An applied magnetic field will destroy the edge spin polarization leading to a positive magnetoresistance. This effect provides means to study spin accumulation by electrical measurements. The origin and the general properties of the phenomenological equations describing coupling between charge and spin currents are also discussed.Comment: 4 pages, 3 figures. Minor corrections corresponding to the published versio

Dyakonov-Perel spin relaxation near metal-insulator transition and in hopping transport

In a heavily doped semiconductor with weak spin-orbital interaction the Dyakonov-Perel spin relaxation rate is known to be proportional to the Drude conductivity. We argue that in the case of weak spin-orbital interaction this proportionality goes beyond the Drude mechanism: it stays valid through the metal-insulator transition and in the range of the exponentially small hopping conductivity.Comment: 3 page

"Phase Diagram" of the Spin Hall Effect

We obtain analytic formulas for the frequency-dependent spin-Hall conductivity of a two-dimensional electron gas (2DEG) in the presence of impurities, linear spin-orbit Rashba interaction, and external magnetic field perpendicular to the 2DEG. We show how different mechanisms (skew-scattering, side-jump, and spin precession) can be brought in or out of focus by changing controllable parameters such as frequency, magnetic field, and temperature. We find, in particular, that the d.c. spin Hall conductivity vanishes in the absence of a magnetic field, while a magnetic field restores the skew-scattering and side-jump contributions proportionally to the ratio of magnetic and Rashba fields.Comment: Some typos correcte

Is Fault-Tolerant Quantum Computation Really Possible?

The so-called "threshold" theorem says that, once the error rate per qubit per gate is below a certain value, indefinitely long quantum computation becomes feasible, even if all of the qubits involved are subject to relaxation processes, and all the manipulations with qubits are not exact. The purpose of this article, intended for physicists, is to outline the ideas of quantum error correction and to take a look at the proposed technical instruction for fault-tolerant quantum computation. It seems that the mathematics behind the threshold theorem is somewhat detached from the physical reality, and that some ideal elements are always present in the construction. This raises serious doubts about the possibility of large scale quantum computations, even as a matter of principle.Comment: Based on a talk given at the Future Trends in Microelectronics workshop, Crete, June 2006. 8 pages, 1 figur

Optical orientation of electron spins in GaAs quantum wells

We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of electron spin polarization is measured as a function of excitation energy for a sequence of quantum wells with well widths between 63 Ang and 198 Ang. The experimental results are compared with an accurate theory of excitonic absorption taking fully into account electron-hole Coulomb correlations and heavy-hole light-hole coupling. We find in wide quantum wells that the measured initial degree of polarization of the luminescence follows closely the spin polarization of the optically excited electrons calculated as a function of energy. This implies that the orientation of the electron spins is essentially preserved when the electrons relax from the optically excited high-energy states to quasi-thermal equilibrium of their momenta. Due to initial spin relaxation, the measured polarization in narrow quantum wells is reduced by a constant factor that does not depend on the excitation energy.Comment: 12 pages, 9 figure

Spin relaxation in a generic two-dimensional spin-orbit coupled system

We study the relaxation of a spin density injected into a two-dimensional electron system with generic spin-orbit interactions. Our model includes the Rashba as well as linear and cubic Dresselhaus terms. We explicitly derive a general spin-charge coupled diffusion equation. Spin diffusion is characterized by just two independent dimensionless parameters which control the interplay between different spin-orbit couplings. The real-time representation of the diffuson matrix (Green's function of the diffusion equation) is evaluated analytically. The diffuson describes space-time dynamics of the injected spin distribution. We explicitly study two regimes: The first regime corresponds to negligible spin-charge coupling and is characterized by standard charge diffusion decoupled from the spin dynamics. It is shown that there exist several qualitatively different dynamic behaviors of the spin density, which correspond to various domains in the spin-orbit coupling parameter space. We discuss in detail a few interesting phenomena such as an enhancement of the spin relaxation times, real space oscillatory dynamics, and anisotropic transport. In the second regime, we include the effects of spin-charge coupling. It is shown that the spin-charge coupling leads to an enhancement of the effective charge diffusion coefficient. We also find that in the case of strong spin-charge coupling, the relaxation rates formally become complex and the spin/charge dynamics is characterized by real time oscillations. These effects are qualitatively similar to those observed in spin-grating experiments [Weber et al., Nature 437, 1330 (2005)].Comment: 18 pages, 7 figure