Stability studies of ZnO and AlN thin film acoustic wave devices in acid and alkali harsh environments

Surface acoustic wave (SAW) devices based on piezoelectric thin-films such as ZnO and AlN are widely used in sensing, microfluidics and lab-on-a-chip applications. However, for many of these applications, the SAW devices will inevitably be used in acid or alkali harsh environments, which may cause their early failures. In this work, we investigated the behavior and degradation mechanisms of thin film based SAW devices in acid and alkali harsh environments. Results show that under the acid and alkali attacks, chemical reaction and corrosion of ZnO devices are very fast (usually within 45 s). During the corrosion, the crystalline orientation of the ZnO film is not changed, but its grain defects are significantly increased and the grain sizes are decreased. The velocity of ZnO-based SAW devices is decreased due to the formation of porous structures induced by the chemical reactions. Whereas an AlN thin-film based SAW device does not perform well in acid–alkali conditions, it might be able to maintain a normal performance without obvious degradation for more than ten hours in acid or alkali solutions. This work could provide guidance for the applications of both ZnO or AlN-based SAW devices in acid/alkali harsh environments

Nanoantennas Inversely Designed to Couple Free Space and a Metal–Insulator–Metal Waveguide

The metal–insulator–metal (MIM) waveguide, which can directly couple free space photons, acts as an important interface between conventional optics and subwavelength photoelectrons. The reason for the difficulty of this optical coupling is the mismatch between the large wave vector of the MIM plasmon mode and photons. With the increase in the wave vector, there is an increase in the field and Ohmic losses of the metal layer, and the strength of the MIM mode decreases accordingly. To solve those problems, this paper reports on inversely designed nanoantennas that can couple the free space and MIM waveguide and efficiently excite the MIM plasmon modes at multiple wavelengths and under oblique angles. This was achieved by implementing an inverse design procedure using a topology optimization approach. Simulation analysis shows that the coupling efficiency is enhanced 9.47-fold by the nanoantenna at the incident wavelength of 1338 nm. The topology optimization problem of the nanoantennas was analyzed by using a continuous adjoint method. The nanoantennas can be inversely designed with decreased dependence on the wavelength and oblique angle of the incident waves. A nanostructured interface on the subwavelength scale can be configured in order to control the refraction of a photonic wave, where the periodic unit of the interface is composed of two inversely designed nanoantennas that are decoupled and connected by an MIM waveguide

Limiting factors in sub-10 nm scanning-electron-beam lithography

Achieving the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications [ F. S. Bates and G. H. Fredrickson, Annu. Rev. Phys. Chem. 41, 525 (1990) ; Black et al., IBM J. Res. Dev. 51, 605 (2007) ; Yang et al., J. Chem. Phys. 116, 5892 (2002) ] have driven demand for feature sizes well into the sub-10 nm domain, close to the resolution limit of the current generation of SEBL processes. In this work, the authors have used a combination of calculation, modeling, and experiment to investigate the relative effects of resist contrast, beam scattering, secondary electron generation, system spot size, and metrology limitations on SEBL process resolution. In the process of investigating all of these effects, they have also successfully yielded dense structures with a pitch of 12 nm at voltages as low as 10 keV

Electrochemical development of hydrogen silsesquioxane by applying an electrical potential

We present a new method for developing hydrogen silsesquioxane (HSQ) by using electrical potentials and deionized water. Nested-L test structures with a pitch as small as 9 nm were developed using this electrochemical technique in saline solution without adding hydroxyl ions. Furthermore, we showed that high-resolution structures can be electrochemically developed in deionized water alone. Electrochemical development is controlled by the applied voltage and may overcome several of the limitations discussed for alkaline developers, such as poor hydroxyl anion diffusion and charge repulsion effects in small trenches.National Science Foundation (U.S.)Massachusetts Institute of Technology. Materials Processing CenterMassachusetts Institute of Technology. Center for Materials Science and Engineerin

Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale

Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-beam lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-beam lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.China Scholarship Council (Fellowship)United States. Dept. of Energy. Center for Excitonics (Award DE-SC0001088)Information Storage Industry ConsortiumNanoelectronics Research InitiativeNational Science Foundation (U.S.

Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist

We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between experimental and Monte-Carlo-simulated point-spread functions at energies of 1.5, 2, and 3 keV. The long-range proximity effect was minimal, as indicated by simulated and patterned 30 nm holes in negative-tone resist.United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001088)National Science Foundation (U.S.) (Grant CMMI-0609241)China Scholarship CouncilNational Science Foundation (U.S.). Graduate Research Fellowshi

Nebulization using ZnO/Si surface acoustic wave devices with focused interdigitated transducers

Propagation of surface acoustic waves (SAWs) on bulk piezoelectric substrates such as LiNbO3 and quartz, exhibits an in-plane anisotropic effect due to their crystal cut orientations. Thin film SAW devices, such as those based on ZnO or AlN, offer potential advantages, including isotropic wave velocities in all in-plane directions, higher power handling capability, and potentially lower failure rates. This paper reports experimental and simulation results of nebulization behaviour for water droplets using ZnO/Si surface acoustic wave devices with focused interdigital transducers (IDTs). Post-deposition annealing of the films at various temperatures was applied to improve the quality of the sputtering-deposited ZnO films, and 500 °C was found to be the optimal annealing temperature. Thin film ZnO/Si focused SAW devices were fabricated using the IDT designs with arc angles ranging from 30° to 90°. Nebulization was significantly enhanced with increasing the arc angles of the IDTs, e.g., increased nebulization rate, reduced critical powers required to initialise nebulization, and concentration of the nebulised plume into a narrower size of spray. Effects of applied RF power and droplet size have been systematically studied, and increased RF power and reduced droplet size significantly enhanced the nebulization phenomena

Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography

The authors, demonstrated that 4.5-nm-half-pitch structures could be achieved using electron-beam lithography, followed by salty development. They also hypothesized a development mechanism for hydrogen silsesquioxane, wherein screening of the resist surface charge is crucial in achieving a high initial development rate, which might be a more accurate assessment of developer performance than developer contrast. Finally, they showed that with a high-development-rate process, a short duration development of 15 s was sufficient to resolve high-resolution structures in 15-nm-thick resist, while a longer development degraded the quality of the structures with no improvement in the resolution