2 research outputs found
The negatively charged nitrogen-vacancy centre in diamond: the electronic solution
The negatively charged nitrogen-vacancy centre is a unique defect in diamond
that possesses properties highly suited to many applications, including quantum
information processing, quantum metrology, and biolabelling. Although the
unique properties of the centre have been extensively documented and utilised,
a detailed understanding of the physics of the centre has not yet been
achieved. Indeed there persists a number of points of contention regarding the
electronic structure of the centre, such as the ordering of the dark
intermediate singlet states. Without a sound model of the centre's electronic
structure, the understanding of the system's unique dynamical properties can
not effectively progress. In this work, the molecular model of the defect
centre is fully developed to provide a self consistent model of the complete
electronic structure of the centre. The application of the model to describe
the effects of electric, magnetic and strain interactions, as well as the
variation of the centre's fine structure with temperature, provides an
invaluable tool to those studying the centre and a means to design future
empirical and ab initio studies of this important defect.Comment: 24 pages, 6 figures, 10 table
Sensing electric fields using single diamond spins
The ability to sensitively detect charges under ambient conditions would be a
fascinating new tool benefitting a wide range of researchers across
disciplines. However, most current techniques are limited to low-temperature
methods like single-electron transistors (SET), single-electron electrostatic
force microscopy and scanning tunnelling microscopy. Here we open up a new
quantum metrology technique demonstrating precision electric field measurement
using a single nitrogen-vacancy defect centre(NV) spin in diamond. An AC
electric field sensitivity reaching ~ 140V/cm/\surd Hz has been achieved. This
corresponds to the electric field produced by a single elementary charge
located at a distance of ~ 150 nm from our spin sensor with averaging for one
second. By careful analysis of the electronic structure of the defect centre,
we show how an applied magnetic field influences the electric field sensing
properties. By this we demonstrate that diamond defect centre spins can be
switched between electric and magnetic field sensing modes and identify
suitable parameter ranges for both detector schemes. By combining magnetic and
electric field sensitivity, nanoscale detection and ambient operation our study
opens up new frontiers in imaging and sensing applications ranging from
material science to bioimaging