Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions

We propose a model that describes current-in-plane tunneling transport in double barrier magnetic tunnel junctions in diffusive regime. Our study shows that specific features appear in double junctions that are described by introducing two typical length scales. The model may be used to measure the magnetoresistance and the resistance area product of both barriers in unpatterned stacks of double barrier magnetic tunnel junctions.Comment: 4 pages, 3 figure

Exchange stiffness in ultrathin perpendicularly-magnetized CoFeB layers determined using spin wave spectroscopy

We measure the frequencies of spin waves in nm-thick perpendicularly magnetized FeCoB systems, and model the frequencies to deduce the exchange stiffness of this material in the ultrathin limit. For this, we embody the layers in magnetic tunnel junctions patterned into circular nanopillars of diameters ranging from 100 to 300 nm and we use magneto-resistance to determine which rf-current frequencies are efficient in populating the spin wave modes. Micromagnetic calculations indicate that the ultrathin nature of the layer and the large wave vectors used ensure that the spin wave frequencies are predominantly determined by the exchange stiffness, such that the number of modes in a given frequency window can be used to estimate the exchange. For 1 nm layers the experimental data are consistent with an exchange stiffness A= 20 pJ/m, which is slightly lower that its bulk counterpart. The thickness dependence of the exchange stiffness has strong implications for the numerous situations that involve ultrathin films hosting strong magnetization gradients, and the micromagnetic description thereof.Comment: 5 pages, 4 figures, submitted to PR

Parametric oscillator based on non-linear vortex dynamics in low resistance magnetic tunnel junctions

Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very sharp peak at the fundamental frequency and a series of harmonics. The observed behaviour is ascribed to the combined effect of spin transfer torque and Oersted-Amp\`ere field generated by the large applied dc-current. We furthermore show that the synchronization of a vortex oscillation by applying a ac bias current is mostly efficient when the external frequency is twice the oscillator fundamental frequency. This result is interpreted in terms of a parametric oscillator.Comment: 4 pages, 4 figure

SPICE modelling of magnetic tunnel junctions written by spin-transfer torque

International audienceSpintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron, but also its spin. The resulting spintronic devices, combining the front-end CMOS technology of electronics with a magnetic backend technology, employ Magnetic Tunnel Junctions (MTJs) as core elements. With the intent of simulating a circuit without fabricating it first, a reliable MTJ electrical model which is applicable to the standard SPICE (Simulation Program with Integrated Circuit Emphasis) simulator is required. Since such a model was lacking so far, we present an accurate MTJ SPICE model whose magnetic state is written by using the Spin-Transfer Torque (STT) effect. This model has been developed in C language and validated on the Cadence Virtuoso Platform with Spectre simulator. Its operation is similar to those of the standard BSIM (Berkeley Short-channel IGFET Model) SPICE model of the MOS transistor and fully compatible with the SPICE electrical simulator. In order to illustrate the model performance, we studied the tunneling conductance and STT-driven magnetization dynamics by comparing our simulation results with theoretical macrospin calculations and results found in the literature

Review on Spintronics : Principles and Device Applications

Spintronics is one of the emerging fields for the next-generation nanoelectronic devices to reduce their power consumption and to increase their memory and processing capabilities. Such devices utilise the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments. In these devices, the spin polarisation is controlled either by magnetic layers used as spin-polarisers or analysers or via spin-orbit coupling. Spin waves can also be used to carry spin current. In this review, the fundamental physics of these phenomena is described first with respect to the spin generation methods as detailed in Sections 2 ~ 9. The recent development in their device applications then follows in Sections 10 and 11. Future perspectives are provided at the end

Exploring the limits of soft x-ray magnetic holography: Imaging magnetization reversal of buried interfaces (invited)

The following article appeared in Journal of Applied Physics 109.7 (2011): 07D357 and may be found at http://scitation.aip.org/content/aip/journal/jap/109/7/10.1063/1.3567035Only a very few experimental techniques can address the microscopic magnetization reversal behavior of the different magnetic layers in a multilayered system with element selectivity. We present an element-selective study of ferromagnetic (FM) [Co/Pt]n multilayers with perpendicular anisotropy exchange-coupled to antiferromagnetic (AFM) FeMn and IrMn films performed with a new experimental set-up developed for both soft x-ray spectroscopy and holography imaging purposes. The spectroscopy analysis allows the quantification of the unpinned (pinned) uncompensated AFM moments, providing direct evidence of its parallel (antiparallel) alignment with respect to the FM moments. The holography experiments give a direct view of both FM and uncompensated AFM magnetic structures, showing that they replicate to each other during magnetization reversal. Remarkably, we show magnetic images for effective thicknesses as small as one monolayer. Our results provide new microscopic insights into the exchange coupling phenomena and explore the sensitivity limits of these techniques. Future trends are also discussed.We acknowledge technical support by the ESRF staff R. Barrett, R. Homs-Regojo, T. Trenit, and G. Retout. A. B. acknowledges support through a Ramo´n y Cajal contract from the Spanish MICINN. This work was supported in part by the Spanish MICINN through Projects CSD2007-00010, and MAT2010-21822 and by Comunidad de Madrid through Project S2009/MAT-1726.Comunidad de Madrid. S2009/MAT-1726/NANOBIOMAGNE

Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs by combining optical writing and electrical read-out methods. A 90 fs-long laser pulse switches the magnetization of the storage layer (SL). The change in magnetoresistance between the SL and a reference layer (RL) is probed electrically across the tunnel barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The switching dynamics in a continuous film is probed with the magneto-optical Kerr effect technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.Comment: total pages 22, Total figure

Patriotic Fun: Toys and Mobilization in China from the Republican to the Communist Era

This chapter explores the use of leisure to mobilize children in China from the 1910s to the early 1950s, in times of both war and peace. Drawing on normative advice, and commenting on youngsters’ reactions, it describes how ostensibly different regimes similarly deployed toys and play in order to foster children’s engagement in struggles of a political, commercial or military nature. It outlines how a variety of items - from so-called “educational” war toys to figurines and lanterns - could serve to rally children for the nation and familiarize war. The chapter argues that, although mobilization was construed as defensive, patriotic activism and acquaintance with the metaphorical or real battlefield were significant components of Chinese children’s upbringing from the beginning of the twentieth century