High accuracy transfer printing of single-mode membrane silicon photonic devices

A transfer printing (TP) method is presented for the micro-assembly of integrated photonic devices from suspended membrane components. Ultra thin membranes with thickness of 150nm are directly printed without the use of mechanical support and adhesion layers. By using a correlation alignment scheme vertical integration of single-mode silicon waveguides is achieved with an average placement accuracy of 100±70nm. Silicon (Si) μ-ring resonators are also fabricated and show controllable optical coupling by varying the lateral absolute position to an underlying Si bus waveguide

Control of automated systems with a structured light illumination source

Autonomous mobile devices can self-locate, navigate and receive control signals using structured illumination from a light-emitting diode array. We present a prototype system and discuss the properties of the optical wireless control

Positioning and data broadcasting using illumination pattern sequences displayed by LED arrays

Illumination of a scene with a time-sequence of spatial light patterns enables clients within the scene to navigate, receive broadcast wireless data, or make subsequent space-division multiple access connections to a high bandwidth wireless system. We have developed dedicated binary pattern sequences, for use with arrays of light-emitting diodes (LEDs), which are projected on the area of interest. The LED arrays can be in either active-matrix or matrix-addressable format. The properties of the different sequences are compared theoretically and experimentally, highlighting a trade-off between position update rate and resilience against pixel cross-talk and interference

Mechanism of enhanced light output in InGaN-based microlight emitting diodes

Micro-light emitting diode (LED) arrays with diameters of 4 to 20 mum have been fabricated and were found to be much more efficient light emitters compared to their broad-area counterparts, with up to five times enhancement in optical power densities. The possible mechanisms responsible for the improvement in performance were investigated. Strain relaxation in the microstructures as measured by Raman spectroscopy was not observed, arguing against theories of an increase in internal quantum efficiency due to a reduction of the piezoelectric field put forward by other groups. Optical microscope images show intense light emission at the periphery of the devices, as a result of light scattering off the etched sidewalls. This increases the extraction efficiency relative to broad area devices and boosts the forward optical output. In addition, spectra of the forward emitted light reveal the presence of resonant cavity modes [whispering gallery (WG) modes in particular] which appear to play a role in enhancing the optical output

Multicolor laser oscillation in a single self-assembled colloidal quantum dot microsphere

Self-assembled microsphere lasers oscillating simultaneously at more than one wavelength in the visible are reported. The lasers consist of micron-scale supraparticles made of CdSxSe1-x/ ZnS quantum dots that emit between 585-605 nm and 625-655 nm

Gallium nitride micro-LEDs: a novel, multi-mode, high-brightness and fast response display technology

Gallium nitride micro-LED technology interfaces very effectively to silicon CMOS to facilitate highly sophisticated data modulation and structured lighting functions. This rapidly emerging capability is poised to play a key role in the prospective convergence of displays with communications, lighting, sensing and imaging systems, including multiple scenarios where the display can be interactive with its environment. We will provide an overview of these new capabilities which are challenging conventional conceptions of display technology and set these in the broader context of the evolution of micro-LEDs

Control of edge bulge evolution during photoresist reflow and it's application to diamond micro-lens fabrication

We present an empirical study of profile evolution of lithographically defined photoresist (PR) patterns during thermal reflow and apply the findings to diamond micro-lens fabrication. During PR reflow, a bulge forms at the edge of the PR pattern and propagates inwards as the temperature and PR thickness are increased. An empirical relationship for this propagation is derived. Furthermore, it was found that at a certain reflow temperature and a limited pattern size, there is a minimum initial thickness of the PR pattern for forming spherical lens profiles. Based on these findings, diamond micro-lenses with a diameter of 400 µm and a previously unachieved radius of curvature of over 13 mm were fabricated. This is underpinned by forming PR micro-lens patterns with a large radius of curvature and transferring the PR patterns through low-selectivity Ar/Cl2 inductively coupled plasma etching

Direct LED writing of submicron resist patterns : towards the fabrication of individually-addressable InGaN submicron stripe-shaped LED arrays

Submicron stripe-shaped InGaN light-emitting diode (LED) arrays with individually addressable capabilities are demonstrated. The critical submicronstripe metallic electrodes, which define the emission pattern, are formed by direct LED writing in a mask-free manner. The individually addressable submicron-stripe LEDs show excellent performance in terms of their electrical characteristics (with typical turn-on voltage of 3 V, operational stability and power output up to 28 μW at 3 mA). Unlike conventional broad-sized LEDs, the efficiency droop of the submicron-stripe LED is significantly suppressed-in fact, there is no efficiency droop for current densities up to 100 A/cm2. Furthermore, the submicron-stripe LED shows a lower temperature-dependent shift of the emission wavelength. The lateral emission width is increased with increasing injection current, resulting in a wider lateral emission size than the metallic submicron-stripe electrode. The underlying physics of these phenomena are analysed. Such submicron-stripe LED arrays open up promising applications in nanophotonics and bio-sensing

Characteristics of GaInNAsSb VCSELs operating near 1.55µm

A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical pumping via low reflectivities at 808nm and 1064nm while providing very high reflectivity at the 1.55μm target emission wavelength. The laser characteristics were evaluated using both a Q-switched Nd:YAG 1064nm pump and a 20W-peak 180ns-pulsed 850nm diode laser. The importance of the gain-cavity detuning was evident from time-dependent spectral measurements of laser material subjected to post-growth annealing at different temperatures between 725 and 775°C. The highest annealing temperature produces the largest blue shift of the gain peak relative to the cavity resonance, resulting in the best power transfer characteristics as well as reduced temperature sensitivity

GaN directional couplers for integrated quantum photonics

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip with 96% visibility.Comment: 4 pages, 5 figure