A New Empirical Non-linear Model for SOI MOSFET

An empirical non-linear model for SOI MOSFET useful for large-signal simulations of high frequency circuit design is presented. An original close form expression is proposed for the drain current and charge conservation is taken into account, as capacitances are derived from a single charge model. The model's parameters are first extracted, prior the model implementation in a circuit simulator. Then some comparisons with experimental data are proposed to validate the model. Note that the model is well suited for the Fully Depleted either the Partially Depleted devices

Low frequency noise conversion in fets under nonlinear operation

Based upon the active line concept, the conversion mechanisms of microscopic low frequency noise (e.g. generation-recombination noise) located in the channel of a Field Effect Transistor (FET) which is driven by a large RF signal is demonstrated. The first consequence is that the based band (low frequency) input gate noise voltage spectral density is dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources located in the channel are responsible of up-converted input gate noise voltage spectral density around the RF frequency

Noise modelling of devices under nonlinear operation

This paper presents a general method for the calculation of the noise correlation matrix of devices under nonlinear operation. It is based on a perturbation analysis of the large-signal noiseless steady state and it constitutes a generalization of the impedance field method. This method is applied for the calculation of the noise correlation matrix of a HEMT Gate Mixer

High frequency noise sources extraction in nanometric MOSFETs

ISBN 1-4020-2169-

Non-Linear Modeling of the Kink Effect in Deep Sub-micron SOI MOSFET

Starting from an empirical non-linear model developed for deep sub-micron channel MOSFETs, we present a new model for floating body SOI MOSFETs. It introduces a new non-linear current model for the kink effect, which takes into account of the related frequency dispersion. The model reproduces very well the AC experimental properties related to the kink effect in floating body devices. As an application, it is used in the framework of large signal simulations to study the impact of the kink effect on the third order intermodulation point. Index Terms — Non linear RF modeling, MOS SOI transistors, low frequency effects, kink effect, intermodulation