Light-activated ferroelectric transition in layer dependent Bi2O2Se films

Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, as well as ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to elucidate the carrier dynamics in Bi2O2Se thin films, Different groups have reported various ultrafast timescales and associated mechanisms across films of different thicknesses. A comprehensive understanding in relation to thickness and fluence is still lacking. In this work, we have systematically explored the thickness-dependent Raman spectroscopy and ultrafast carrier dynamics in chemical vapor deposition (CVD)-grown Bi2O2Se thin films on mica substrate with thicknesses varying from 22.44 nm down to 4.62 nm at both low and high pump fluence regions. Combining the thickness dependence and fluence dependence of the slow decay time, we demonstrate a ferroelectric transition in the thinner (< 8 nm) Bi2O2Se films, influenced by substrate-induced compressive strain and non-equilibrium states. Moreover, this transition can be manifested under highly non-equilibrium states. Our results deepen the understanding of the interplay between the ferroelectric phase and semiconducting characteristics of Bi2O2Se thin films, providing a new route to manipulate the ferroelectric transition

Controlled Growth of Large‐Sized and Phase‐Selectivity 2D GaTe Crystals

GaTe has recently attracted significant interest due to its direct bandgap and unique phase structure, which makes it a good candidate for optoelectronics. However, the controllable growth of large-sized monolayer and few-layer GaTe with tunable phase structures remains a great challenge. Here the controlled growth of large-sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid-metal-assisted chemical vapor deposition method. By using liquid Ga, the rapid growth of 2D GaTe flakes with high phase-selectivity can be obtained due to its reduced reaction temperature. In addition, the method is used to synthesize many Ga-based 2D materials and their alloys, showing good universality. Raman spectra suggest that the as-grown GaTe own a relatively weak van der Waals interaction, where monoclinic GaTe displays highly-anisotropic optical properties. Furthermore, a p-n junction photodetector is fabricated using GaTe as a p-type semiconductor and 2D MoSe2 as a typical n-type semiconductor. The GaTe/MoSe2 heterostructure photodetector exhibits large photoresponsivity of 671.52 A W-1 and high photo-detectivity of 1.48 × 1010 Jones under illumination, owing to the enhanced light absorption and good quality of as-grown GaTe. These results indicate that 2D GaTe is a promising candidate for electronic and photoelectronic devices.Agency for Science, Technology and Research (A*STAR)Ministry of Education (MOE)National Research Foundation (NRF)This research was supported by Fund of National Key Laboratory of Science and Technology on Advanced Composites in Special Environments (Grant No. 6142905192507), Shenzhen Science and Technology Plan Supported Project (Grant Nos. JCYJ20170413105844696, KQJSCX20170726104440871), China Scholarship Council (Grant No. 201606125092) and A*STAR under its AME IRG Grant (Project No. 19283074). Z.L. also acknowledges the support from National Research Foundation Singapore Programme (NRF-CRP21-2018-0007 and NRF-CRP22-2019-0007), Singapore Ministry of Education via AcRF Tier 3 (MOE2018-T3-1-002), AcRF Tier 2 (MOE2016-T2-1-131), and AcRF Tier 1 RG4/17 and RG7/18