High-voltage Parallel Writing on Iron Nitride Thin Films

We report large area patterning of sputter-deposited FeN thin films by a high-voltage parallel writing technique that was recently developed to modify ZrN surfaces. Systematically patterned 15-100-nm-thick FeN films consisting of features with well-defined sizes and shapes are obtained by applying high dc voltages between a stamp and the samples. During the process the oxide dissolves, exposing the substrate beneath. This controlled breakdown eliminates the need for any postexposure etching. The single-step imprinting method presented here provides an emerging route to fabricate isolated FeN geometrical structures on silicon substrates for magnetic applications. (c) 2006 American Vacuum Society

Scanning Tunneling Microscopy and Fabrication of Nanometer Scale Structures at the Liquid-Gold Interface

The Scanning Tunneling Microscope (STM) can image gold surfaces covered with a variety of liquids. This paper reviews the results obtained using the STM to image gold surfaces covered with liquid. These results include the creation of 10 nm structures, images of the electrochemical process of electroplating, and the production of atomically flat Au (111) surfaces. We conclude that in the future STM will find further application in the area of nanostructure fabrication and electrochemistry. The trend in the field is toward greater control of the electrochemical environment

Nanoscale Oxidation of Zirconium Surfaces: Kinetics and Mechanisms

We show that atomic force microscope-induced oxide features can be formed reproducibly on both Zr and ZrN surfaces, and that the growth rate decreases rapidly with increasing time. There is an increase in oxide-feature height with humidity for both systems, and an approximately linear dependence of the height of the structures on the applied voltage for all films for short exposure times. As the anodization time increases, only the thinnest (6 nm) films show a large enhancement in oxide-feature height, demonstrating the role of the film/substrate interface. Under the same conditions, the height of features grown on ZrN films is greater than for those grown on Zr films, indicating that nitrogen plays a role in the oxidation process. (C) 2003 American Vacuum Society

Characterization of Zirconium Nitride Films Sputter Deposited with an Extensive Range of Nitrogen Flow Rates

ZrNx films are deposited by rf magnetron sputtering using a wide range of nitrogen flow rates to control film properties. Scanned probe microscope (SPM) oxidation is presented as a complimentary characterization tool to x-ray diffraction, colorimetric, and four point probe analyses. The SPM oxidation behavior of the ZrNx films is related to their structural, optical, and electrical properties. Whereas stoichiometric ZrN films have applications as protective and/or decorative coatings, ZrNx films sputtered with higher nitrogen flow rates have potential applications in devices where arrays of high aspect ratio nanostructures would be useful. (C) 2008 American Vacuum Society

Local Oxidation of Metal and Metal Nitride Films

Oxide growth on sputter-deposited thin films is studied on the local scale by atomic force microscope (AFM)-assisted lithography. We investigate the group IV reactive metals Zr, Hf, Ti, and their nitrides.-The nitrogen content of the deposition plasma affects the film crystal structure and electrical resistivity, which in turn alter the local oxidation rates. Mass transport plays an important role, producing features with heights ranging from a few nanometers up to hundreds of nanometers. The heights of the largest features are one to two orders of magnitude greater than observed in other material systems, and the growth is well controlled. We use various techniques to investigate the solid-state reaction and transport mechanisms involved in this oxidation driven by a highly localized electric field. Our results demonstrate the potential of AFM lithographic techniques for characterizing oxidation processes across a wide range of time and length scales. C 2004 American Vacuum Society

Electronic properties of GaAs surfaces etched in an electron cyclotron resonance source and chemically passivated using P2S5P2S5

Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/ArCl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5.P2S5. The plasma etch shifts the Fermi level of p-GaAsp-GaAs from near the valence band to midgap, but has no effect on n-GaAs.n-GaAs. For ion energies below 250 eV, post-etch P2S5P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it. © 1998 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/69373/2/APPLAB-73-1-114-1.pd

Spm Oxidation and Parallel Writing on Zirconium Nitride Thin Films

Systematic investigation of the SPM oxidation process of sputter-deposited ZrN thin films is reported. During the intrinsic part of the oxidation, the density of the oxide increases until the total oxide thickness is approximately twice the feature height. Further oxide growth is sustainable as the system undergoes plastic flow followed by delamination from the ZrN-silicon interface keeping the oxide density constant. ZrN exhibits superdiffusive oxidation kinetics in these single tip SPM studies. We extend this work to the fabrication of parallel oxide patterns 70 nm in height covering areas in the square centimeter range. This simple, quick, and well-controlled parallel nanolithographic technique has great potential for biomedical template fabrication. (c) 2005 American Vacuum Society

Parallel Writing on Zirconium Nitride Thin Films by Local Oxidation Nanolithography

Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of similar to70 nm in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries. (C) 2004 American Institute of Physics

Predictive model for scanned probe oxidation kinetics

Previous descriptions of scanned probe oxidation kinetics involved implicit assumptions that one-dimensional, steady-state models apply for arbitrary values of applied voltage and pulse duration. These assumptions have led to inconsistent interpretations regarding the fundamental processes that contribute to control of oxide growth rate. We propose a model that includes a temporal crossover of the system from transient to steady-state growth and a spatial crossover from predominantly vertical to coupled lateral growth. The model provides an excellent fit of available experimental data

Measuring electrical current during scanning probe oxidation

Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip-surface distance is known unequivocally during current acquisition. Currentmeasurements at finite tip-sample distance, in particular, unveil how the geometry of the meniscus influences its electrical conduction properties as well as the role of space charge at very small tip-sample distances