On the determination of the quasiparticle scattering rate in unconventional superconductors by microwave surface impedance

In the approximation of validity of the Drude expression for quasiparticle conductivity and the assumption that all electrons at T = 0 transform into a superfluide condensate, the expression for the quasiparticle scattering rate tau -1 in terms of the real and imaginary parts of the microwave surface impedance has been obtained. The resulting expression is a generalization of the well-known expression for tau^-1, valid for omega x tau is much less 1, to an arbitrary value of omega x tau, where omega is the frequency of the microwave field. From experimental Ka-band impedance measurements, temperature dependence of tau^-1 in superconducting single crystal pnictides Ba(Fe1-xCox)2As2 is obtained using the generalized expression. It is shown that under condition of the given work, the approximation omega x tau is much less 1 gives the considerable error in determination of tau^-1.Comment: 3 pages, 1 figur

Tunable coaxial cavity resonator for linear and nonlinear microwave characterization of superconducting wires

We discuss experimental results obtained using a tunable cylindrical coaxial cavity constituted by an outer Cu cylinder and an inner Pb-BSCCO wire. We have used this device for investigating the microwave response of the superconducting wire, both in the linear and nonlinear regimes. In particular, by tuning the different modes of the cavity to make them resonant at exactly harmonic frequencies, we have detected the power emitted by the superconducting inner wire at the second- and third-harmonic frequency of the driving field. The results obtained in the nonlinear regime, whether for the microwave surface impedance or the harmonic emission, are qualitatively accounted for considering intergrain fluxon dynamics. The use of this kind of device can be of strong interest to investigate and characterise wires of large dimensions to be used for implementing superconducting-based microwave devices.Comment: 14 pages, 6 embedded figures, accepted for publication in Supercond. Sci. Techno

Simulation of boron diffusion during low-temperature annealing of implanted silicon

Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs due to the long-range migration of boron interstitialsComment: 16 pages, 3 figure

Unusual features in the nonlinear microwave surface impedance of Y-Ba-Cu-O thin films

Striking features have been found in the nonlinear microwave (8 GHz) surface impedance $Z_s=R_s + jX_s$ of high-quality YBaCuO thin films with comparable low power characteristics [$R_{res}\sim 35--60 \mu\Omega$ and $\lambda_L(15 K)\sim 130--260 nm$]. The surface resistance $R_s$ is found to increase, decrease, or remain independent of the microwave field $H_{rf}$ (up to 60 mT) at different temperatures and for different samples. However, the surface reactance $X_s$ always follows the same functional form. Mechanisms which may be responsible for the observed variations in $R_s$ and $X_s$ are briefly discussed.Comment: 4 pages, 4 figure

Pattern formation on the surface of cationic-anionic cylindrical aggregates

Charged pattern formation on the surfaces of self--assembled cylindrical micelles formed from oppositely charged heterogeneous molecules such as cationic and anionic peptide amphiphiles is investigated. The net incompatibility $\chi$ among different components results in the formation of segregated domains, whose growth is inhibited by electrostatics. The transition to striped phases proceeds through an intermediate structure governed by fluctuations, followed by states with various lamellar orientations, which depend on cylinder radius $R_c$ and $\chi$. We analyze the specific heat, susceptibility $S(q^*)$, domain size $\Lambda=2\pi/q^*$ and morphology as a function of $R_c$ and $\chi$.Comment: Sent to PRL 11Jan05 Transferred from PRL to PRE 10Jun0

Mechanisms of arsenic clustering in silicon

A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number of the negatively charged clusters incorporating a point defect and one or more arsenic atoms are investigated. It is shown that for the doubly negatively charged clusters or for clusters incorporating more than one arsenic atom the electron density reaches a maximum value and then monotonically and slowly decreases as total arsenic concentration increases. In the case of doubly negatively charged cluster incorporating two arsenic atoms, the calculated electron density agrees well with the experimental data. Agreement with the experiment confirms the conclusion that two arsenic atoms participate in the cluster formation. Among all present models, the proposed model of clustering by formation of doubly negatively charged cluster incorporating two arsenic atoms gives the best fit to the experimental data and can be used in simulation of high concentration arsenic diffusion.Comment: 13 pages, 4 figures. Revised and shortened version of the paper has been published in Phys. Rev. B, Vol.74 (3), art. no. 035205 (2006

Nonlinear Dielectric Microwave Losses in MgO Substrates

We have investigated the nonlinear surface impedance and two-tone intermodulation distortion of nine epitaxial YBa2Cu3O7-d films on MgO substrates, using stripline resonators, at frequencies f=2.3-11.2GHz and temperatures T=1.7K-Tc. The power dissipation decreased by up to one order of magnitude as the microwave electric field was increased to about 100V/m for T<20 K, while the reactance Xs showed only a weak increase. The minimum of the losses correlated with a plateau in the intermodulation signal. The same features were observed for a Nb film on MgO. The anomalous response is due to nonlinear dielectric losses in the substrate, which can be described by defect dipole relaxation