54 research outputs found

    Evaluation of emerging parallel optical link technology for high energy physics

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    Modern particle detectors utilize optical fiber links to deliver event data to upstream trigger and data processing systems. Future detector systems can benefit from the development of dense arrangements of high speed optical links emerging from industry advancements in transceiver technology. Supporting data transfers of up to 120 Gbps in each direction, optical engines permit assembly of the optical transceivers in close proximity to ASICs and FPGAs. Test results of some of these parallel components will be presented including the development of pluggable FPGA Mezzanine Cards equipped with optical engines to provide to collaborators on the Versatile Link Common Project for the HI-LHC at CERN

    Applications of Emerging Parallel Optical Link Technology to High Energy Physics Experiments

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    Modern particle detectors depend upon optical fiber links to deliver event data to upstream trigger and data processing systems. Future detector systems can benefit from the development of dense arrangements of high speed optical links emerging from the telecommunications and storage area network market segments. These links support data transfers in each direction at rates up to 120 Gbps in packages that minimize or even eliminate edge connector requirements. Emerging products include a class of devices known as optical engines which permit assembly of the optical transceivers in close proximity to the electrical interfaces of ASICs and FPGAs which handle the data in parallel electrical format. Such assemblies will reduce required printed circuit board area and minimize electromagnetic interference and susceptibility. We will present test results of some of these parallel components and report on the development of pluggable FPGA Mezzanine Cards equipped with optical engines to provide to collaborators on the Versatile Link Common Project for the HI-LHC at CERN

    Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

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    The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.Comment: 14 page

    Test stand for the Silicon Vertex Detector of the Collider Detector Facility

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    A test stand for the next generation of the Silicon Vertex Detector (SVX-II) of the Collider Detector Facility (CDF) at Fermilab has been developed. It is capable of performing cosmic ray, beam, and laser pulsing tests on silicon strip detectors using the new generation of SVX chips. The test stand is composed of a SGI workstation, a VME CPU, the Silicon Test Acquisition and Readout (STAR) board, the Test Fiber Interface Board (TFIB), and the Test Port Card (TPC). The STAR mediates between external stimuli for the different tests and produces appropriate high level commands which are sent to the TFIB. The TFIB, in conjunction with the TPC, translates these commands into the correct logic levels to control the SVX chips. The four modes of operation of the SVX chips are configuration, data acquisition, digitization, and data readout. The data read out from the SVX chips is transferred to the STAR. The STAR can then be accessed by the VME CPU and the SGI workstation for future analyses. The detailed description of this test stand is given

    Laboratory and testbeam results for thin and epitaxial planar sensors for HL-LHC

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    The High-Luminosity LHC (HL-LHC) upgrade of the CMS pixel detector will require the development of novel pixel sensors which can withstand the increase in instantaneous luminosity to L = 5 × 1034 cm–2s–1 and collect ~ 3000fb–1 of data. The innermost layer of the pixel detector will be exposed to doses of about 1016 neq/ cm2. Hence, new pixel sensors with improved radiation hardness need to be investigated. A variety of silicon materials (Float-zone, Magnetic Czochralski and Epitaxially grown silicon), with thicknesses from 50 μm to 320 μm in p-type and n-type substrates have been fabricated using single-sided processing. The effect of reducing the sensor active thickness to improve radiation hardness by using various techniques (deep diffusion, wafer thinning, or growing epitaxial silicon on a handle wafer) has been studied. Furthermore, the results for electrical characterization, charge collection efficiency, and position resolution of various n-on-p pixel sensors with different substrates and different pixel geometries (different bias dot gaps and pixel implant sizes) will be presented

    Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

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    The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 μ\mum thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 310153 \cdot 10^{15} neq/cm2^2. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations

    Characterisation of irradiated thin silicon sensors for the CMS phase II pixel upgrade

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    The high luminosity upgrade of the Large Hadron Collider, foreseen for 2026, necessitates the replacement of the CMS experiment's silicon tracker. The innermost layer of the new pixel detector will be exposed to severe radiation, corresponding to a 1 MeV neutron equivalent fluence of up to Phi(eq) = 2x10(16) cm(-2), and an ionising dose of approximate to 5 MGy after an integrated luminosity of 3000 fb(-1). Thin, planar silicon sensors are good candidates for this application, since the degradation of the signal produced by traversing particles is less severe than for thicker devices. In this paper, the results obtained from the characterisation of 100 and 200 mu m thick p-bulk pad diodes and strip sensors irradiated up to fluences of Phi(eq) = 1.3 x 10(16) cm(-2) are shown.Peer reviewe

    Mechanical stability of the CMS strip tracker measured with a laser alignment system

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