986 research outputs found

    Interstrip resistance measurement.

    Get PDF
    In ATLAS SCT community two methods of interstrip resistance measurements are used: a) measuring the resistance between two strips and comparing it with a separately measured strip-to bias-rail resistance and b) applying DC voltage to one strip and measuring the current flowing to another strip. The method a) will further be referred to as Resistance Method and method b) as Induced Current Method. In the latter the current can be measured either directly or by a voltage drop on the bias resistor. All three techniques are analyzed in this Note and illustrated by measurements with the same sensor

    MC-128: current commutator for silicon strip detector tests

    Get PDF
    The MC-128 is a CAMAC module designed to simplify routine tests of multichannel semiconductor detectors. It was developed at Budker Institute of Nuclear Physics (BINP) Novosibirsk in collaboration with RD2 as part of the ATLAS SCT development program. The module provides 128 channels, offering sequential measurements of the currents flowing grom detector strips to a grounded Common Bus. Each input stays virtually connected to the Common Bus independently on whether its current is measured or not. Eight inputs are permanently connected to the Common Bus, allowing the connection of additional elements like guard ring structures. The total detector current can be measured as the current flowing through the Common Bus. Measurements are accessible via a CAMAC bus and in analog form via a front panel detector. Optionally, the MC 128 allows the measurement of the capacitance between each strip and the common (high voltage) electrode of the detector at 10 kHz frequency

    Rapidity Distributions of Dileptons from a Hadronizing Quark-Gluon Plasma

    Get PDF
    It has been predicted that dilepton production may be used as a quark-gluon plasma probe. We calculate the rapidity distributions of thermal dileptons produced by an evolving quark-gluon plasma assuming a longitudinal scaling expansion with initial conditions locally determined from the hadronic rapidity density. These distributions are compared with Drell-Yan production and semileptonic charm decays at invariant mass M=2M = 2, 4, and 6 GeV.Comment: 17 pages (standard LaTeX), 6 figures (available as topdraw files or printed versions upon request), GSI-93-6

    Pion-induced damage in silicon detectors

    Get PDF
    The damage induced by pions in silicon detectors is studied for positive and negative pions for fluence up to 10(14)cm-2 and 10(13) cm-2 respectively. Results on the energy dependence of the damage in the region of 65-330 MeV near to the resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron and proton-induced damage are presented and discussed

    Radiation damage in the LHCb vertex locator

    Get PDF
    The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately 45 × 1012 1 MeV neutron equivalent (1 MeV neq). At the operational sensor temperature of approximately −7 °C, the average rate of sensor current increase is 18 μA per fb−1, in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of Eg = 1.16±0.03±0.04 eV obtained. The first observation of n+-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around 15 × 1012 of 1 MeV neq. The only n+-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately 3 × 1012 1 MeV neq, a decrease in the Effective Depletion Voltage (EDV) of around 25 V is observed. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n+-on-n type sensors, with rates of (1.43±0.16) × 10−12 V/ 1 MeV neq and (1.35±0.25) × 10−12 V/ 1 MeV neq measured for n+-on-p and n+-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed

    ATLAS Pixel Opto-Electronics

    Full text link
    We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the LHC at CERN: a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi-Phase Mark decoder chip to recover the control data and 40 MHz clock received optically by a PIN diode. We have successfully implemented both ASICs in 0.25 micron CMOS technology using enclosed layout transistors and guard rings for increased radiation hardness. We present results of the performance of these chips, including irradiation with 24 GeV protons up to 61 Mrad (2.3 x 10e15 p/cm^2).Comment: 17 pages, 23 figures, submitted to NIM Added references. Added figure 15. Moved sec. IV to sec. I

    Hunt for new phenomena using large jet multiplicities and missing transverse momentum with ATLAS in 4.7 fb−1 of s√=7TeV proton-proton collisions

    Get PDF
    Results are presented of a search for new particles decaying to large numbers of jets in association with missing transverse momentum, using 4.7 fb−1 of pp collision data at s√=7TeV collected by the ATLAS experiment at the Large Hadron Collider in 2011. The event selection requires missing transverse momentum, no isolated electrons or muons, and from ≥6 to ≥9 jets. No evidence is found for physics beyond the Standard Model. The results are interpreted in the context of a MSUGRA/CMSSM supersymmetric model, where, for large universal scalar mass m 0, gluino masses smaller than 840 GeV are excluded at the 95% confidence level, extending previously published limits. Within a simplified model containing only a gluino octet and a neutralino, gluino masses smaller than 870 GeV are similarly excluded for neutralino masses below 100 GeV
    corecore