748 research outputs found

    Decoherence of electron spin qubits in Si-based quantum computers

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    Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important solid-state quantum computer designs operating at low temperatures. We calculate the relaxation rate 1/T11/T_1 as a function of [100] uniaxial strain, temperature, magnetic field, and silicon/germanium content for Si:P bound electrons. The quantum dot potential is much smoother, leading to smaller splittings of the valley degeneracies. We have estimated these splittings in order to obtain upper bounds for the relaxation rate. In general, we find that the relaxation rate is strongly decreased by uniaxial compressive strain in a SiGe-Si-SiGe quantum well, making this strain an important positive design feature. Ge in high concentrations (particularly over 85%) increases the rate, making Si-rich materials preferable. We conclude that SiGe bound electron qubits must meet certain conditions to minimize decoherence but that spin-phonon relaxation does not rule out the solid-state implementation of error-tolerant quantum computing.Comment: 8 figures. To appear in PRB-July 2002. Revisions include: some references added/corrected, several typos fixed, a few things clarified. Nothing dramati

    Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

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    We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.Comment: 8 pages using REVTeX, 8 figures, published versio

    Stability of sub-surface oxygen at Rh(111)

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    Using density-functional theory (DFT) we investigate the incorporation of oxygen directly below the Rh(111) surface. We show that oxygen incorporation will only commence after nearly completion of a dense O adlayer (\theta_tot = 1.0 monolayer) with O in the fcc on-surface sites. The experimentally suggested octahedral sub-surface site occupancy, inducing a site-switch of the on-surface species from fcc to hcp sites, is indeed found to be a rather low energy structure. Our results indicate that at even higher coverages oxygen incorporation is followed by oxygen agglomeration in two-dimensional sub-surface islands directly below the first metal layer. Inside these islands, the metastable hcp/octahedral (on-surface/sub-surface) site combination will undergo a barrierless displacement, introducing a stacking fault of the first metal layer with respect to the underlying substrate and leading to a stable fcc/tetrahedral site occupation. We suggest that these elementary steps, namely, oxygen incorporation, aggregation into sub-surface islands and destabilization of the metal surface may be more general and precede the formation of a surface oxide at close-packed late transition metal surfaces.Comment: 9 pages including 9 figure files. Submitted to Phys. Rev. B. Related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.htm

    X-Band ESR Determination of Dzyaloshinsky-Moriya Interaction in 2D SrCu2_2(BO3_3)2_2 System

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    X-band ESR measurements on a single crystal of SrCu2_2(BO3_3)2_2 system in a temperature range between 10 K and 580 K are presented. The temperature and angular dependence of unusually broad ESR spectra can be explained by the inclusion of antisymmetric Dzyaloshinsky-Moriya (DM) interaction, which yields by far the largest contribution to the linewidth. However, the well-accepted picture of only out-of-plane interdimer DM vectors is not sufficient for explanation of the observed angular dependence. In order to account for the experimental linewidth anisotropy we had to include sizable in-plane components of interdimer as well as intradimer DM interaction in addition to the out-of-plane interdimer one. The nearest-neighbor DM vectors lie perpendicular to crystal anisotropy c-axis due to crystal symmetry. We also emphasize that above the structural phase transition occurring at 395 K dynamical mechanism should be present allowing for instantaneous DM interactions. Moreover, the linewidth at an arbitrary temperature can be divided into two contributions; namely, the first part arising from spin dynamics governed by the spin Hamiltonian of the system and the second part due to significant spin-phonon coupling. The nature of the latter mechanism is attributed to phonon-modulation of the antisymmetric interaction, which is responsible for the observed linear increase of the linewidth at high temperatures.Comment: 17 pages, 4 figures, submitted to PR

    Modelling charge self-trapping in wide-gap dielectrics: Localization problem in local density functionals

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    We discuss the adiabatic self-trapping of small polarons within the density functional theory (DFT). In particular, we carried out plane-wave pseudo-potential calculations of the triplet exciton in NaCl and found no energy minimum corresponding to the self-trapped exciton (STE) contrary to the experimental evidence and previous calculations. To explore the origin of this problem we modelled the self-trapped hole in NaCl using hybrid density functionals and an embedded cluster method. Calculations show that the stability of the self-trapped state of the hole drastically depends on the amount of the exact exchange in the density functional: at less than 30% of the Hartree-Fock exchange, only delocalized hole is stable, at 50% - both delocalized and self-trapped states are stable, while further increase of exact exchange results in only the self-trapped state being stable. We argue that the main contributions to the self-trapping energy such as the kinetic energy of the localizing charge, the chemical bond formation of the di-halogen quasi molecule, and the lattice polarization, are represented incorrectly within the Kohn-Sham (KS) based approaches.Comment: 6 figures, 1 tabl

    Dopant-induced crossover from 1D to 3D charge transport in conjugated polymers

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    The interplay between inter- and intra-chain charge transport in bulk polythiophene in the hopping regime has been clarified by studying the conductivity as a function of frequency (up to 3 THz), temperature and doping level. We present a model which quantitatively explains the observed crossover from quasi-one-dimensional transport to three-dimensional hopping conduction with increasing doping level. At high frequencies the conductivity is dominated by charge transport on one-dimensional conducting chains.Comment: 4 pages, 2 figure

    Electron Spin-Relaxation Times of Phosphorus Donors in Silicon

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    Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-dependent longitudinal relaxation time, T1, due to an Orbach process with DeltaE = 126 K. The 2-pulse echo decay is exponential in 28Si:P, with the transverse relaxation (decoherence) time, T2, controlled by the Orbach process above ~12 K and by instantaneous diffusion at lower temperatures. Spin echo experiments with varying pulse turning angles show that the intrinsic T2 of an isolated spin in 28Si:P is ~60 ms at 7 K.Comment: Submitted to PRL on 02.28.200

    First-principles calculations of the self-trapped exciton in crystalline NaCl

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    The atomic and electronic structure of the lowest triplet state of the off-center (C2v symmetry) self-trapped exciton (STE) in crystalline NaCl is calculated using the local-spin-density (LSDA) approximation. In addition, the Franck-Condon broadening of the luminescence peak and the a1g -> b3u absorption peak are calculated and compared to experiment. LSDA accurately predicts transition energies if the initial and final states are both localized or delocalized, but 1 eV discrepancies with experiment occur if one state is localized and the other is delocalized.Comment: 4 pages with 4 embeddded figure

    Automodulations in Kerr-lens Modelocked Solid-State Lasers

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    Nonstationary pulse regimes associated with self modulation of a Kerr-lens modelocked Ti:sapphire laser have been studied experimentally and theoretically. Such laser regimes occur at an intracavity group delay dispersion that is smaller or larger than what is required for stable modelocking and exhibit modulation in pulse amplitude and spectra at frequencies of several hundred kHz. Stabilization of such modulations, leading to an increase in the pulse peak power by a factor of ten, were accomplished by weakly modulating the pump laser with the self-modulation frequency. The main experimental observations can be explained with a round trip model of the fs laser taking into account gain saturation, Kerr lensing, and second- and third-order dispersion.Comment: 21 pages, 9 Postscript figures, TeX, the calculations are presented on http://www.geocities.com/optomaple
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