Анализ экспериментальных данных по фотообразованию ?+-мезонов для энергии фотонов 230 МэВ

На основе измеренных ранее на электронном синхротроне "Сириус" значений асимметрии фотообразования ?+-мезонов на протоне, а также данных других лабораторий, был проведен феноменологический анализ для =230 МэВ. В результате были получены 5 независимых величин А1, А2, А3, ?, ?, необходимых для вычисления мультипольных амплитуд

Instability phenomena in microcrystalline silicon films

Microcrystalline silicon (μc-Si:H) for solar cell applications is investigated with respect to the material stability upon treatment of the material in various environments, followed by annealing. The material can be separated into two groups: (i) material with high crystalline volume fractions and pronounced porosity which is susceptible to in-diffusion of atmospheric gases, which, through adsorption or oxidation affect the electronic properties and (ii) compact material with high or low crystalline volume fractions which show considerably less or no influence of treatment in atmospheric gases. We report the investigation of such effects on the stability of μc-Si:H films prepared by plasma enhanced chemical vapour deposition and hot wire chemical vapour deposition

Defects in amorphous phase-change materials

Understanding the physical origin of threshold switching and resistance drift phenomena is necessary for making a breakthrough in the performance of low-cost nanoscale technologies related to nonvolatile phase-change memories. Even though both phenomena of threshold switching and resistance drift are often attributed to localized states in the band gap, the distribution of defect states in amorphous phase-change materials (PCMs) has not received so far, the level of attention that it merits. This work presents an experimental study of defects in amorphous PCMs using modulated photocurrent experiments and photothermal deflection spectroscopy. This study of electrically switching alloys involving germanium (Ge), antimony (Sb) and tellurium (Te) such as amorphous germanium telluride (a-GeTe), a-Ge15Te85 and a-Ge2Sb2Te5 demonstrates that those compositions showing a high electrical threshold field also show a high defect density. This result supports a mechanism of recombination and field-induced generation driving threshold switching in amorphous chalcogenides. Furthermore, this work provides strong experimental evidence for complex trap kinetics during resistance drift. This work reports annihilation of deep states and an increase in shallow defect density accompanied by band gap widening in aged a-GeTe thin film

Особенности разработки и функционала универсальной парковочной станции для персонального электротранспорта

N-type microcrystalline silicon carbide layers prepared by hot-wire chemical vapor deposition were used as window layers for microcrystalline silicon n-i-p solar cells. The microcrystalline silicon intrinsic and p-layers of the solar cells were prepared with plasma-enhanced chemical vapor deposition at a very high frequency. Amorphous silicon incubation layers were observed at the initial stages of the growth of the microcrystalline silicon intrinsic layer under conditions close to the transition from microcrystalline to amorphous silicon growth. 'Seed layers' were developed to improve the nucleation and growth of microcrystalline silicon on the microcrystalline silicon carbide layers. Raman scattering measurement demonstrates that an incorporation of a 'seed layer' can drastically increase the crystalline volume fraction of the total absorber layer. Accordingly, the solar cell performance is improved. The correlation between the cell performance and the structural property of the absorber layer is discussed. By optimizing the deposition process, a high short-circuit current density of 26.7 mA/cm(2) was achieved with an absorber layer thickness of 1 pm, which led to a cell efficiency of 9.2%. (C) 2007 Elsevier B.V. All rights reserved

Highly Reflective Dielectric Back Reflector for Improved Efficiency of Tandem Thin-Film Solar Cells

We report on the prototyping and development of a highly reflective dielectric back reflector for application in thin-film solar cells. The back reflector is fabricated by Snow Globe Coating (SGC), an innovative, simple, and cheap process to deposit a uniform layer of TiO2 particles which shows remarkably high reflectance over a broad spectrum (average reflectance of 99% from 500 nm to 1100 nm). We apply the highly reflective back reflector to tandem thin-film silicon solar cells and compare its performance with conventional ZnO:Al/Ag reflector. By using SGC back reflector, an enhancement of 0.5 mA/cm2 in external quantum efficiency of the bottom solar cell and an absolute value of 0.2% enhancement in overall power conversion efficiency are achieved. We also show that the increase in power conversion efficiency is due to the reduction of parasitic absorption at the back contact; that is, the use of the dielectric reflector avoids plasmonic losses at the reference ZnO:Al/Ag back reflector. The Snow Globe Coating process is compatible with other types of solar cells such as crystalline silicon, III–V, and organic photovoltaics. Due to its cost effectiveness, stability, and excellent reflectivity above a wavelength of 400 nm, it has high potential to be applied in industry

Повышение эффективности коррозионной защиты магистральных трубопроводов в грунтах с высокой коррозионной активностью

В работе изложен анализ существующих методов борьбы с коррозионными разрушениями трубопроводов в грунтах с высокой коррозионной активностью. В процессе исследования проводились: изучение теоретических основ процессов коррозионных разрушений; выявление факторов, оказывающих наибольшее влияние на возникновение коррозионных процессов; рассмотрение методов пассивной и активной защиты трубопроводов от коррозии. В результате исследования: произведен расчет электрохимической защиты. Область применения: линейная часть магистрального трубопровода.The article presents an analysis of existing methods for combating corrosion damage to pipelines in soils with increased corrosive activity. In the course of the research, the following were carried out: study of the theoretical foundations of corrosion destruction processes; identification of factors that have the greatest impact on the occurrence of corrosion processes; consideration of methods of passive and active protection of pipelines from corrosion. As a result of the research: the calculation of the electrochemical protection was made. Scope: linear part of the main pipeline

Analysis of light propagation in thin-film solar cells by dual-probe scanning near-field optical microscopy

In this study, light propagation in textured hydrogenated microcrystalline silicon (μc-Si:H) thin-film solar cells is investigated on a sub-micron-scale by means of dual-probe scanning near-field optical microscopy (SNOM). Applying advanced modes of operation - exclusively available at dual probe SNOMs - light propagation is analyzed with subwavelength resolution. Measurements at μc-Si:H thin-film solar cells layer are presented visualizing the influence of local surface features on light propagation. Furthermore, the intensity decay of light guided inside the solar cell is mapped. The observed intensity decay agrees well with theory, verifying the validity of the method