Simulation of Dynamic Stresses on High Performance Engine Valve Spring System Considering Coil Clashing Effect

AbstractThe valve train plays a major role in the performance of internal combustion engines by controlling the combustion process and it is therefore one of the key aspects for increasing the efficiency of combustion engines. Considering the dynamics, the spring force must be high enough to reliably close the valve preventing from seating bouncing due to surge modes after the valve closure. On the other side, the spring force should be kept as low as possible in order to reduce the engine friction losses and consequently the fuel consumption. In the high-performance engines, the valve springs have to be designed and optimized for sustaining higher stresses with compact dimensions leading to critical material and manufacturing processes. This requires a reduction of moving masses and a strong focus on design and process optimization of the coil springs for reducing the mechanical load and the friction losses at low engine speed. At the same time, valve train should be reliable at high engine speed. The calculation of stresses and contact forces for moving parts under dynamic load is essential for durability analysis. A method to calculate the contact of moving masses is described and proposed to justify valve motions experimental results. To fully understand the failure mechanism of test bed reliability trials, the dynamic stresses have been calculated modeling the real springs' shape. The contact forces have been reproduced considering the coil clash effects and the dynamic behavior of the flexible spring

An experimental-numeric approach to manufacture semiconductor wafer using thick copper front metallization

AbstractThe presented work investigates about the deformation of semiconductor device induced by electrochemical deposited thick copper films. It enhances thermal and electric performances allowing to use copper interconnections without formations of intermetallic layers at the interfaces with consequent reliability improvement. Nevertheless, the induced deformation strongly affects manufacturability, criticizing the integration between different process steps. Experiment based on phase-shift Moiré principle has been performed to better understand the relation between warpage and temperature. Finite element model has been developed to reproduce the phenomenon in order to address the design and the process integration optimizing workability, electrical performances and reliability

Deep Learning Algorithm for Advanced Level-3 Inverse-Modeling of Silicon-Carbide Power MOSFET Devices

Inverse modelling with deep learning algorithms involves training deep architecture to predict device's parameters from its static behaviour. Inverse device modelling is suitable to reconstruct drifted physical parameters of devices temporally degraded or to retrieve physical configuration. There are many variables that can influence the performance of an inverse modelling method. In this work the authors propose a deep learning method trained for retrieving physical parameters of Level-3 model of Power Silicon-Carbide MOSFET (SiC Power MOS). The SiC devices are used in applications where classical silicon devices failed due to high-temperature or high switching capability. The key application of SiC power devices is in the automotive field (i.e. in the field of electrical vehicles). Due to physiological degradation or high-stressing environment, SiC Power MOS shows a significant drift of physical parameters which can be monitored by using inverse modelling. The aim of this work is to provide a possible deep learning-based solution for retrieving physical parameters of the SiC Power MOSFET. Preliminary results based on the retrieving of channel length of the device are reported. Channel length of power MOSFET is a key parameter involved in the static and dynamic behaviour of the device. The experimental results reported in this work confirmed the effectiveness of a multi-layer perceptron designed to retrieve this parameter.Comment: 13 pages, 8 figures, to be published on Journal of Physics: Conference Serie

Power Semiconductor Devices and Packages: Solder Mechanical Characterization and Lifetime Prediction

Solder reliability is a key aspect for the packaging of low voltage power semiconductor device. The interconnections among package components, e.g. the silicon chip and copper leadframe, and between package itself and the external printed control board (PCB) should be properly designed to ensure the automotive durability requirements. In this framework, the proposed paper introduces an experimental-numeric characterization flow with the purpose to analyze solder visco-plasticity and fatigue during passive temperature cycle. The presented methodology has included solder mechanical characterization aimed to determine the parameters of Anand model which reproduces the solder visco-plastic behavior and the mechanical properties' temperature dependency. Finite element model has been employed to calculate the inelastic work which solder dissipates during each temperature cycle. Simulation results serve as input to predict solder lifetime according to an energetic method. Moreover, failure analyses have been performed to assess the failure mechanism and to check model correlation in terms of number of cycles to failure forecast

Analysis of Warpage Induced by Thick Copper Metal on Semiconductor Device

AbstractElectrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional compound such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (~20 µm) copper layer. Warpage has been experimental characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. A linear Finite Element Model (FEM) has been developed to predict the geometrically stress-curvature relation, comparing results with analytical models

Implementation and Comparison of SiC and GaN switches for EV Fast Recharging Systems

Wide bandgap material-based devices allow faster switching frequency and exhibit smaller losses than traditional Si devices; nevertheless, a complete understanding of the functioning of these new devices remains poorly understood. A fast battery charger for electric vehicles based on a converter employing SiC and GaN devices is here reported Besides, these two technologies are experimentally compared, in the same layout, to highlights their performance in terms of electrical dynamic and electromagnetic compatibility

Study of an intrinsically safe infrastructure for training and research on nuclear technologies

Within European Partitioning & Transmutation research programs, infrastructures specifically dedicated to the study of fundamental reactor physics and engineering parameters of future fast-neutron-based reactors are very important, being some of these features not available in present zero-power prototypes. This presentation will illustrate the conceptual design of an Accelerator-Driven System with high safety standards, but ample flexibility for measurements. The design assumes as base option a 70MeV, 0.75mA proton cyclotron, as the one which will be installed at the INFN National Laboratory in Legnaro, Italy and a Beryllium target, with Helium gas as core coolant. Safety is guaranteed by limiting the thermal power to 200 kW, with a neutron multiplication coefficient around 0.94, loading the core with fuel containing Uranium enriched at 20% inserted in a solid-lead diffuser. The small decay heat can be passively removed by thermal radiation from the vessel. Such a system could be used to study, among others, some specific aspects of neutron diffusion in lead, beam-core coupling, target cooling and could serve as a training facility

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

Electrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional materials, such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (20 μm) copper layer. Warpage is experimentally characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. Physical analysis is employed to correlated the macroscopic warpage behavior with microstructure modification. A linear Finite Element Model (FEM) is developed to predict the geometrically stress-curvature relation, comparing results with analytical models

Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling

The increasing demand in automotive markets is leading the semiconductor industries to develop high-performance and highly reliable power devices. Silicon carbide MOSFET chips are replacing silicon-based solutions through their improved electric and thermal capabilities. In order to support the development of these novel semiconductors, packaging technologies are evolving to provide enough reliable products. Silver sintering is one of the most promising technologies for die attach. Due to their superior reliability properties with respect to conventional soft solder compounds, dedicated reliability flow and physical analyses should be designed and employed for sintering process optimization and durability assessment. This paper proposes an experimental methodology to optimize the pressure value applied during the silver sintering manufacturing of a silicon carbide power MOSFET molded package. The evaluation of the best pressure value is based on scanning electron microscopy performed after a liquid-to-liquid thermal shock reliability test. Furthermore, the sintering layer degradation is monitored during durability stress by scanning the acoustic microscopy and electric measurement of a temperature sensitive electric parameter. Moreover, mechanical elastoplastic behavior is characterized by uniaxial tensile test for a bulk sample and finite element analysis is developed to predict the mechanical behavior as a function of void fraction inside sintering layer