152 research outputs found
Effect of the Pauli principle on photoelectron spin transport in GaAs
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin
transport is investigated theoretically and experimentally by imaging the spin
polarization profile as a function of distance from a tightly-focussed light
excitation spot. Under degeneracy of the electron gas (high concentration, low
temperature), a dip at the center of the polarization profile appears with a
polarization maximum at a distance of about from the center. This
counterintuitive result reveals that photoelectron diffusion depends on spin,
as a direct consequence of the Pauli principle. This causes a concentration
dependence of the spin stiffness while the spin dependence of the mobility is
found to be weak in doped material. The various effects which can modify spin
transport in a degenerate electron gas under local laser excitation are
considered. A comparison of the data with a numerical solution of the coupled
diffusion equations reveals that ambipolar coupling with holes increases the
steady-state photo-electron density at the excitation spot and therefore the
amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents
are predicted to depend on spin under degeneracy (spin Soret currents), but
these currents are negligible except at very high excitation power where they
play a relatively small role. Coulomb spin drag and bandgap renormalization are
negligible due to electrostatic screening by the hole gas
Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density
Carrier and spin recombination are investigated in p-type GaAs of acceptor
concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence
spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly
neutral and photoelectrons can either recombine with holes bound to acceptors
(e-A0 line) or form excitons which are mostly trapped on neutral acceptors
forming the (A0X) complex. It is found that the spin lifetime is shorter for
electrons that recombine through the e-A0 transition due to spin relaxation
generated by the exchange scattering of free electrons with either trapped or
free holes, whereas spin flip processes are less likely to occur once the
electron forms with a free hole an exciton bound to a neutral acceptor. An
increase of exci- tation power induces a cross-over to a regime where the
bimolecular band-to-band (b-b) emission becomes more favorable due to screening
of the electron-hole Coulomb interaction and ionization of excitonic complexes
and free excitons. Then, the formation of excitons is no longer possible, the
carrier recombination lifetime increases and the spin lifetime is found to
decrease dramatically with concentration due to fast spin relaxation with free
photoholes. In this high density regime, both the electrons that recombine
through the e-A0 transition and through the b-b transition have the same spin
relaxation time.Comment: 4 pages, 5 figure
Absence of an intrinsic value for the surface recombination velocity in doped semiconductors
A self-consistent expression for the surface recombination velocity and
the surface Fermi level unpinning energy as a function of light excitation
power () is presented for n- and p-type semiconductors doped above the
10 cm range. Measurements of on p-type GaAs films using a
novel polarized microluminescence technique are used to illustrate two limiting
cases of the model. For a naturally oxidized surface is described by a
power law in whereas for a passivated surface varies
logarithmically with . Furthermore, the variation in with surface state
density and bulk doping level is found to be the result of Fermi level
unpinning rather than a change in the intrinsic surface recombination velocity.
It is concluded that depends on throughout the experimentally
accessible range of excitation powers and therefore that no instrinsic value
can be determined. Previously reported values of on a range of
semiconducting materials are thus only valid for a specific excitation power.Comment: 10 pages, 7 figure
Detection of selection signatures in farmed coho salmon (Oncorhynchus kisutch) using dense genome-wide information
Animal domestication and artificial selection give rise to gradual changes at the genomic level in populations. Subsequent footprints of selection, known as selection signatures or selective sweeps, have been traced in the genomes of many animal livestock species by exploiting variation in linkage disequilibrium patterns and/or reduction of genetic diversity. Domestication of most aquatic species is recent in comparison with land animals, and salmonids are one of the most important fish species in aquaculture. Coho salmon (Oncorhynchus kisutch), cultivated primarily in Chile, has been subjected to breeding programs to improve growth, disease resistance traits, and flesh color. This study aimed to identify selection signatures that may be involved in adaptation to culture conditions and traits of productive interest. To do so, individuals of two domestic populations cultured in Chile were genotyped with 200 thousand SNPs, and analyses were conducted using iHS, XP-EHH and CLR. Several signatures of selection on different chromosomal regions were detected across both populations. Some of the identified regions under selection contained genes such anapc2, alad, chp2 and myn, which have been previously associated with body weight in Atlantic salmon, or sec24d and robo1, which have been associated with resistance to Piscirickettsia salmonis in coho salmon. Findings in our study can contribute to an integrated genome-wide map of selection signatures, to help identify the genetic mechanisms of phenotypic diversity in coho salmon
Imaging ambipolar diffusion of photocarriers in GaAs thin films
Images of the steady-state luminescence of passivated GaAs self-standing
films under excitation by a tightly-focussed laser are analyzed as a function
of light excitation power. While unipolar diffusion of photoelectrons is
dominant at very low light excitation power, an increased power results in a
decrease of the diffusion constant near the center of the image due to the
onset of ambipolar diffusion. The results are in agreement with a numerical
solution of the diffusion equations and with a physical analysis of the
luminescence intensity at the centre of the image, which permits the
determination of the ambipolar diffusion constant as a function of electron
concentration.Comment: 5 figure
A systematic study of spin-dependent recombination in GaAsN as a function of nitrogen content
A systematic study of spin-dependent recombination (SDR) under steady-state
optical pumping conditions in dilute nitride semiconductors as a function of
nitrogen content is reported. The alloy content is determined by a fit of the
photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and
verified by a study of the GaN-like LO phonon peak in a Raman spectroscopy
map. PL spectra taken from alloys of the form GaAsN where exhibit PL intensity increases when switching from a linearly- to a
circularly-polarized pump up to a factor of 5 for . This work used a
1.39 eV laser with a radius of 0.6 m. The observed SDR ratio monotonically
decreases with increasing , reaching 1.5 for . Moreover, the
excitation power required to obtain maximum SDR systematically increases with
increasing , varying from 0.6 mW for to 15 mW for .
These observations are consistent with an increase in the density of
electronically active defects with increasing nitrogen content, both those
responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH)
centers.Comment: 11 pages, 5 figures; work presented at the International Conference
on the Physics of Semiconductors, Sydney, 202
Design and in vitro effectiveness evaluation of Echium amoenum extract loaded in bioadhesive phospholipid vesicles tailored for mucosal delivery
The Echium amoenum Fisch. and C.A. Mey. (E. amoenum) is an herb native from Iranian shrub, and its blue-violet flowers are traditionally used as medical plants. In the present study, an antioxidant phytocomplex was extracted from the flowers of E. amoenum by ultrasounds-assisted hydroalcoholic maceration. The main components, contained in the extract, have been detected using HPLC-DAD, and rosmarinic acid was found to be the most abundant. The antioxidant power of the extract along with the phenolic content were measured using colorimetric assays. The extract was loaded in liposomes, which were enriched adding different bioadhesive polymers (i.e., mucin, xanthan gum and carboxymethyl cellulose sodium salt) individually or in combination. The main physico-chemical properties (i.e. size, size distribution, surface charge) of the prepared vesicles were measured as well as their stability on storage. The viscosity of dispersion and the ability of vesicles to interact with mucus were evaluated measuring their stability in a mucin dispersion and mobility in a mucin film. The biocompatibility and the ability of the formulations to protect keratinocytes from damages caused by hydrogen peroxide and to promote the cell migration were measured in vitro
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