Effect of the Pauli principle on photoelectron spin transport in p+p^+ GaAs

In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under degeneracy of the electron gas (high concentration, low temperature), a dip at the center of the polarization profile appears with a polarization maximum at a distance of about $2 \; \mu m$ from the center. This counterintuitive result reveals that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle. This causes a concentration dependence of the spin stiffness while the spin dependence of the mobility is found to be weak in doped material. The various effects which can modify spin transport in a degenerate electron gas under local laser excitation are considered. A comparison of the data with a numerical solution of the coupled diffusion equations reveals that ambipolar coupling with holes increases the steady-state photo-electron density at the excitation spot and therefore the amplitude of the degeneracy-induced polarization dip. Thermoelectric currrents are predicted to depend on spin under degeneracy (spin Soret currents), but these currents are negligible except at very high excitation power where they play a relatively small role. Coulomb spin drag and bandgap renormalization are negligible due to electrostatic screening by the hole gas

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and photoelectrons can either recombine with holes bound to acceptors (e-A0 line) or form excitons which are mostly trapped on neutral acceptors forming the (A0X) complex. It is found that the spin lifetime is shorter for electrons that recombine through the e-A0 transition due to spin relaxation generated by the exchange scattering of free electrons with either trapped or free holes, whereas spin flip processes are less likely to occur once the electron forms with a free hole an exciton bound to a neutral acceptor. An increase of exci- tation power induces a cross-over to a regime where the bimolecular band-to-band (b-b) emission becomes more favorable due to screening of the electron-hole Coulomb interaction and ionization of excitonic complexes and free excitons. Then, the formation of excitons is no longer possible, the carrier recombination lifetime increases and the spin lifetime is found to decrease dramatically with concentration due to fast spin relaxation with free photoholes. In this high density regime, both the electrons that recombine through the e-A0 transition and through the b-b transition have the same spin relaxation time.Comment: 4 pages, 5 figure

Absence of an intrinsic value for the surface recombination velocity in doped semiconductors

A self-consistent expression for the surface recombination velocity $S$ and the surface Fermi level unpinning energy as a function of light excitation power ($P$) is presented for n- and p-type semiconductors doped above the 10$^{16}$ cm$^{-3}$ range. Measurements of $S$ on p-type GaAs films using a novel polarized microluminescence technique are used to illustrate two limiting cases of the model. For a naturally oxidized surface $S$ is described by a power law in $P$ whereas for a passivated surface $S^{-1}$ varies logarithmically with $P$. Furthermore, the variation in $S$ with surface state density and bulk doping level is found to be the result of Fermi level unpinning rather than a change in the intrinsic surface recombination velocity. It is concluded that $S$ depends on $P$ throughout the experimentally accessible range of excitation powers and therefore that no instrinsic value can be determined. Previously reported values of $S$ on a range of semiconducting materials are thus only valid for a specific excitation power.Comment: 10 pages, 7 figure

Detection of selection signatures in farmed coho salmon (Oncorhynchus kisutch) using dense genome-wide information

Animal domestication and artificial selection give rise to gradual changes at the genomic level in populations. Subsequent footprints of selection, known as selection signatures or selective sweeps, have been traced in the genomes of many animal livestock species by exploiting variation in linkage disequilibrium patterns and/or reduction of genetic diversity. Domestication of most aquatic species is recent in comparison with land animals, and salmonids are one of the most important fish species in aquaculture. Coho salmon (Oncorhynchus kisutch), cultivated primarily in Chile, has been subjected to breeding programs to improve growth, disease resistance traits, and flesh color. This study aimed to identify selection signatures that may be involved in adaptation to culture conditions and traits of productive interest. To do so, individuals of two domestic populations cultured in Chile were genotyped with 200 thousand SNPs, and analyses were conducted using iHS, XP-EHH and CLR. Several signatures of selection on different chromosomal regions were detected across both populations. Some of the identified regions under selection contained genes such anapc2, alad, chp2 and myn, which have been previously associated with body weight in Atlantic salmon, or sec24d and robo1, which have been associated with resistance to Piscirickettsia salmonis in coho salmon. Findings in our study can contribute to an integrated genome-wide map of selection signatures, to help identify the genetic mechanisms of phenotypic diversity in coho salmon

Imaging ambipolar diffusion of photocarriers in GaAs thin films

Images of the steady-state luminescence of passivated GaAs self-standing films under excitation by a tightly-focussed laser are analyzed as a function of light excitation power. While unipolar diffusion of photoelectrons is dominant at very low light excitation power, an increased power results in a decrease of the diffusion constant near the center of the image due to the onset of ambipolar diffusion. The results are in agreement with a numerical solution of the diffusion equations and with a physical analysis of the luminescence intensity at the centre of the image, which permits the determination of the ambipolar diffusion constant as a function of electron concentration.Comment: 5 figure

A systematic study of spin-dependent recombination in GaAs1−x_{1-x}Nx_x as a function of nitrogen content

A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs$_{1-x}$N$_x$ where $0.022 < x < 0.036$ exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for $x = 0.022$. This work used a 1.39 eV laser with a radius of 0.6 $\mu$m. The observed SDR ratio monotonically decreases with increasing $x$, reaching 1.5 for $x = 0.036$. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing $x$, varying from 0.6 mW for $x = 0.022$ to 15 mW for $x = 0.036$. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers.Comment: 11 pages, 5 figures; work presented at the International Conference on the Physics of Semiconductors, Sydney, 202

Design and in vitro effectiveness evaluation of Echium amoenum extract loaded in bioadhesive phospholipid vesicles tailored for mucosal delivery

The Echium amoenum Fisch. and C.A. Mey. (E. amoenum) is an herb native from Iranian shrub, and its blue-violet flowers are traditionally used as medical plants. In the present study, an antioxidant phytocomplex was extracted from the flowers of E. amoenum by ultrasounds-assisted hydroalcoholic maceration. The main components, contained in the extract, have been detected using HPLC-DAD, and rosmarinic acid was found to be the most abundant. The antioxidant power of the extract along with the phenolic content were measured using colorimetric assays. The extract was loaded in liposomes, which were enriched adding different bioadhesive polymers (i.e., mucin, xanthan gum and carboxymethyl cellulose sodium salt) individually or in combination. The main physico-chemical properties (i.e. size, size distribution, surface charge) of the prepared vesicles were measured as well as their stability on storage. The viscosity of dispersion and the ability of vesicles to interact with mucus were evaluated measuring their stability in a mucin dispersion and mobility in a mucin film. The biocompatibility and the ability of the formulations to protect keratinocytes from damages caused by hydrogen peroxide and to promote the cell migration were measured in vitro