Electron-Shading Characterization in a HDP Contact Etching Process Using a Patterned CHARM Wafer

In this work, a CHARM-2 wafer with high aspect ratio resist patterns has been used to quantitatively I. Introduction To understand the origin of plasma-induced damage, useful plasma parameters such as floating potentials and J-V characteristics can be measured using the non-invasive CHARM method To study this effect, we have designed different resist patterns on a 200 mm CHARM™-2 wafer with an e-beam lithography. This allows to obtain realistic variable aspect ratio as high as 4, contrary to previous studie

Study of Metallic Interfaces Etching for High-K Metal Gate stacks in CMOS 28 nm Technology

International audienc

Sidewall Modification of Porous SiOCH Induced by Etching and Post Etching Plasma Treatments

International audienc