623 research outputs found
Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device
We investigate the magneto-transport characteristics of nanospintronics
single-electron devices. The devices consist of single non-magnetic
nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co
ferromagnetic leads. The comparison with simulations allows us attribute the
observed magnetoresistance to either spin accumulation or anisotropic
magneto-Coulomb effect (AMC), two effects with very different origins. The fact
that the two effects are observed in similar samples demonstrates that a
careful analysis of Coulomb blockade and magnetoresistance behaviors is
necessary in order to discriminate them in magnetic single-electron devices. As
a tool for further studies, we propose a simple way to determine if spin
transport or AMC effect dominates from the Coulomb blockade I-V curves of the
spintronics device
Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor
We report on spin injection experiments at a Co/AlO/GaAs interface
with electrical detection. The application of a transverse magnetic field
induces a large voltage drop at the interface as high as 1.2mV for a
current density of 0.34 nA.. This represents a dramatic increase of
the spin accumulation signal, well above the theoretical predictions for spin
injection through a ferromagnet/semiconductor interface. Such an enhancement is
consistent with a sequential tunneling process via localized states located in
the vicinity of the AlO/GaAs interface. For spin-polarized carriers
these states act as an accumulation layer where the spin lifetime is large. A
model taking into account the spin lifetime and the escape tunneling time for
carriers travelling back into the ferromagnetic contact reproduces accurately
the experimental results
Mechanisms of spin-polarized current-driven magnetization switching
The mechanisms of the magnetization switching of magnetic multilayers driven
by a current are studied by including exchange interaction between local
moments and spin accumulation of conduction electrons. It is found that this
exchange interaction leads to two additional terms in the
Landau-Lifshitz-Gilbert equation: an effective field and a spin torque. Both
terms are proportional to the transverse spin accumulation and have comparable
magnitudes
Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper
We study the extrinsic spin Hall effect induced by Ir impurities in Cu by
injecting a pure spin current into a CuIr wire from a lateral spin valve
structure. While no spin Hall effect is observed without Ir impurity, the spin
Hall resistivity of CuIr increases linearly with the impurity concentration.
The spin Hall angle of CuIr, % throughout the concentration
range between 1% and 12%, is practically independent of temperature. These
results represent a clear example of predominant skew scattering extrinsic
contribution to the spin Hall effect in a nonmagnetic alloy.Comment: 5 pages, 4 figure
Ordering in a spin glass under applied magnetic field
Torque, torque relaxation, and magnetization measurements on a AuFe spin
glass sample are reported. The experiments carried out up to 7 T show a
transverse irreversibility line in the (H,T) plane up to high applied fields,
and a distinct strong longitudinal irreversibility line at lower fields. The
data demonstrate for that this type of sample, a Heisenberg spin glass with
moderately strong anisotropy, the spin glass ordered state survives under high
applied fields in contrast to predictions of certain "droplet" type scaling
models. The overall phase diagram closely ressembles those of mean field or
chiral models, which both have replica symmetry breaking transitions.Comment: 4 pages, 3 figures, accepted for PR
Coupling efficiency for phase locking of a spin transfer oscillator to a microwave current
The phase locking behavior of spin transfer nano-oscillators (STNOs) to an
external microwave signal is experimentally studied as a function of the STNO
intrinsic parameters. We extract the coupling strength from our data using the
derived phase dynamics of a forced STNO. The predicted trends on the coupling
strength for phase locking as a function of intrinsic features of the
oscillators i.e. power, linewidth, agility in current, are central to optimize
the emitted power in arrays of mutually coupled STNOs
Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque
We investigate the dynamics of two coupled vortices driven by spin transfer.
We are able to independently control with current and perpendicular field, and
to detect, the respective chiralities and polarities of the two vortices. For
current densities above , a highly coherent signal
(linewidth down to 46 kHz) can be observed, with a strong dependence on the
relative polarities of the vortices. It demonstrates the interest of using
coupled dynamics in order to increase the coherence of the microwave signal.
Emissions exhibit a linear frequency evolution with perpendicular field, with
coherence conserved even at zero magnetic field
Spin injection in a single metallic nanoparticle: a step towards nanospintronics
We have fabricated nanometer sized magnetic tunnel junctions using a new
nanoindentation technique in order to study the transport properties of a
single metallic nanoparticle. Coulomb blockade effects show clear evidence for
single electron tunneling through a single 2.5 nm Au cluster. The observed
magnetoresistance is the signature of spin conservation during the transport
process through a non magnetic cluster.Comment: 3 page
Experimental evidences of a large extrinsic spin Hall effect in AuW alloy
We report an experimental study of a gold-tungsten alloy (7% at. W
concentration in Au host) displaying remarkable properties for spintronics
applications using both magneto-transport in lateral spin valve devices and
spin-pumping with inverse spin Hall effect experiments. A very large spin Hall
angle of about 10% is consistently found using both techniques with the
reliable spin diffusion length of 2 nm estimated by the spin sink experiments
in the lateral spin valves. With its chemical stability, high resistivity and
small induced damping, this AuW alloy may find applications in the nearest
future
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