Nanomanufacturing handbook / Ahmed Busnaina, [editor].

Includes bibliographical references and index.Book fair 2012.408 p. :Analyzing the challenges of commercializing nanotechnologies, this handbook presents a broad survey of the research being done to bring nanotechnology out of the laboratory and into the factory. It also includes a survey of the state of nanomanufacturing in the US

Large Area CoNi Stress Free Electroformed Mold for Nanoimprint Lithography

Nanoimprint lithography is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and high resolution. But it also requires a stamp which has a lower fabrication cost and longer life time. Depending on application, stamps in wafer-size scale have been studied by several groups. CoNi alloys can be used to fabricate a nano-size patterned mold by electrodeposition on a Si mother mold with a seed layer. After electrodeposition, the sample is usually dipped in KOH solution to remove Si. The consumption of Si mold is a necessary step to produce a stamp. In this study, a method was developed to fabricate CoNi alloy stamps without the consumption of Si mother mold. Vapor self assembled monolayer (SAM) method was used to deposit an anti-adhesion layer instead of Si removal method. SAM has a low surface energy, makes possible to separate Ni from Si substrate without causing any damages on Si mold. Especially, vapor SAM method has its advantage when the mold features are in nanometer scale. It eliminates the use of organic solvents and greatly simplifies the handling of the sample. As a result, 140mm CoNi stamp for NIL has been successfully fabricated from a nano Si mother mold by using a developed method. The characteristics of deposited SAM were analyzed by measurements of the contact angle, its hysteresis, surface energy, thickness and lateral friction force. Duplicated patterns on CoNi alloy stamp were compared with those of Si mother mold by using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). This process enables us to produce a cost effective metal nano stamp

PRECISION CLEANING OF SEMICONDUCTOR SURFACES USING CARBON DIOXIDE-BASED FLUIDS

The Los Alamos National Laboratory, on behalf of the Hewlett-Packard Company, is conducting tests of a closed-loop CO{sub 2}-based supercritical fluid process, known as Supercritical CO{sub 2} Resist Remover (SCORR). We have shown that this treatment process is effective in removing hard-baked, ion-implanted photoresists, and appears to be fully compatible with metallization systems. We are now performing experiments on production wafers to assess not only photoresist removal, but also residual surface contamination due to particulate and trace metals. Dense-phase (liquid or supercritical) CO{sub 2}, since it is non-polar, acts like an organic solvent and therefore has an inherently high volubility for organic compounds such as oils and greases. Also, dense CO{sub 2} has a low-viscosity and a low dielectric constant. Finally, CO{sub 2} in the liquid and supercritical fluid states can solubilize metal completing agents and surfactants. This combination of properties has interesting implications for the removal not only of organic films, but also trace metals and inorganic particulate. In this paper we discuss the possibility of using CO{sub 2} as a precision-cleaning solvent, with particular emphasis on semiconductor surfaces