Design Impact on Charge Transfer Inefficiency of Surface CCD on CMOS Devices: TCAD and Characterization Study

This work presents a study of design optimization of CCD on CMOS devices, in order to minimize the Charge Transfer Inefficiency (CTI). To achieve this goal, 3D Technology Computer Aided Design (TCAD) simulations with a trap model at silicon–oxide interface were conducted, and measurements on two test chips manufactured on two different foundries were performed. TCAD simulations predict trends in agreement with measurements, but trap models at STI and gate oxides should be adapted accordingly to the technology used. Some design variations show results depending on the technology chosen, and the best CTI reduction is obtained with an increase of Pwell inclusion over STI edges

SOFI: A 3D simulator for the generation of underwater optical images

International audienceWe present an original simulator-called SOFI-for the synthetic generation of underwater optical images. The simulator architecture is flexible and relies on flow diagrams in order to allow the integration of various models for image generation which are based on the underwater optical phenomena. The objective is also to ensure real time or quasi real time performance so it takes advantage of the latest technologies, such as GPGPU, and relies on GPU programming under CUDA. Two kinds of models for image generation are presented and should be integrated in SOFI: (1) the OSOA model based on the radiative transfer theory and (2) global image modeling which describes globally how an image is deteriorated under the effects of sea water

Analysis of the underwater image degradation using radiative transfer modeling. Application to submarine image visibility

International audienc