Intensity and phase noise correlations in a dual-frequency VECSEL operating at telecom wavelength

The amplitude and phase noises of a dual-frequency vertical-external-cavity surface-emitting laser (DF-VECSEL) operating at telecom wavelength are theoretically and experimentally investigated in detail. In particular, the spectral behavior of the correlation between the intensity noises of the two modes of the DF-VECSEL is measured. Moreover, the correlation between the phase noise of the radio-frequency (RF) beatnote generated by optical mixing of the two laser modes with the intensity noises of the two modes is investigated. All these spectral behaviors of noise correlations are analyzed for two different values of the nonlinear coupling between the laser modes. We find that to describe the spectral behavior of noise correlations between the laser modes, it is of utmost importance to have a precise knowledge about the spectral behavior of the pump noise, which is the dominant source of noise in the frequency range of our interest (10 kHz to 35 MHz). Moreover, it is found that the noise correlation also depends on how the spatially separated laser modes of the DF-VECSEL intercept the noise from a multi-mode fiber-coupled laser diode used for pumping both the laser modes. To this aim, a specific experiment is reported, which aims at measuring the correlations between different spatial regions of the pump beam. The experimental results are in excellent agreement with a theoretical model based on modified rate equations

Microcavity polariton light emitting diode

Cavity polaritons have been shown these last years to exhibit a rich variety of non-linear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100 K.Comment: 5 pages 3 figure

Optical bistability in a GaAs based polariton diode

We report on a new type of optical nonlinearity in a polariton p-i-n microcavity. Abrupt switching between the strong and weak coupling regime is induced by controlling the electric field within the cavity. As a consequence bistable cycles are observed for low optical powers (2-3 orders of magnitude less than for Kerr induced bistability). Signatures of switching fronts propagating through the whole 300 microns x 300 microns mesa surface are evidenced.Comment: 5 pages 3 figure

Metasurface-based total internal reflection microscopy

Recent years have seen a tremendous progress in the development of dielectric metasurfaces for visible light applications. Such metasurfaces are ultra-thin optical devices that can manipulate optical wavefronts in an arbitrary manner. Here, we present a newly developed metasurface which allows for coupling light into a microscopy coverslip to achieve total internal reflection (TIR) excitation. TIR fluorescence microscopy (TIRFM) is an important bioimaging technique used specifically to image cellular membranes or surface-localized molecules with high contrast and low background. Its most commonly used modality is objective-type TIRFM where one couples a focused excitation laser beam at the edge of the back focal aperture of an oil-immersion objective with high numerical aperture (N.A.) to realize a high incident-angle plane wave excitation above the critical TIR angle in sample space. However, this requires bulky and expensive objectives with a limited field-of-view (FOV). The metasurface which we describe here represents a low cost and easy-to-use alternative for TIRFM. It consists of periodic 2D arrays of asymmetric structures fabricated in TiO2 on borosilicate glass. It couples up to 70% of the incident non-reflected light into the first diffraction order at an angle of 65 degrees in glass, which is above the critical TIR angle for a glass-water interface. Only similar to 7% of the light leaks into propagating modes traversing the glass surface, thus minimizing any spurious background fluorescence originating far outside the glass substrate. We describe in detail design and fabrication of the metasurface, and validate is applicability for TIRFM by imaging immunostained human mesenchymal stem cells over a FOV of 200 mu m x 200 mu m. We envision that these kinds of metasurfaces can become a valuable tool for low-cost and TIRFM, offering high contrast, low photodamage, and high surface selectivity in fluorescence excitation and detection. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreemen

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schr\"odinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas

The Excitation Ladder of Cavity Polaritons

Multidimensional coherent spectroscopy directly unravels multiply excited states that overlap in a linear spectrum. We report multidimensional coherent optical photocurrent spectroscopy in a semiconductor polariton diode and explore the excitation ladder of cavity polaritons. We measure doubly and triply avoided crossings for pairs and triplets of exciton-polaritons, demonstrating the strong coupling between light and dressed doublet and triplet semiconductor excitations. These results demonstrate that multiply excited excitonic states strongly coupled to a microcavity can be described as two coupled quantum-anharmonic ladders

Excitation Ladder of Cavity Polaritons

Multidimensional coherent spectroscopy directly unravels multiply excited states that overlap in a linear spectrum. We report multidimensional coherent optical photocurrent spectroscopy in a semiconductor polariton diode and explore the excitation ladder of cavity polaritons. We measure doubly and triply avoided crossings for pairs and triplets of exciton polaritons, demonstrating the strong coupling between light and dressed doublet and triplet semiconductor excitations. These results demonstrate that multiply excited excitonic states strongly coupled to a microcavity can be described as two coupled quantum-anharmonic ladders

Ultra-low noise dual-frequency VECSEL at telecom wavelength using fully correlated pumping

International audienceAn ultra-low intensity and beatnote phase noise dual-frequency vertical-external-cavity surface-emitting laser is built at telecom wavelength. The pump laser is realized by polarization combining two single-mode fibered laser diodes in a single-mode fiber, leading to a 100% in-phase correlation of the pump noises for the two modes. The relative intensity noise is lower than −140 dB∕Hz, and the beatnote phase noise is suppressed by 30 dB, getting close to the spontaneous emission limit. The role of the imperfect cancellation of the thermal effect resulting from unbalanced pumping of the two modes in the residual phase noise is evidenced

Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening

The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the bandgap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carriers lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming it is lower than the corresponding Mott density for zinc oxide reported in the literature