Scanning Tunneling Spectroscopic Studies of the Effects of Dielectrics and Metallic Substrates on the Local Electronic Characteristics of Graphene

Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper foils are investigated and compared with those of mechanical exfoliated graphene on SiO_2. For exfoliated graphene, the local spectral deviations from ideal behavior may be attributed to strain induced by the SiO_2 substrate. For CVD grown graphene, the lattice structure appears strongly distorted by the underlying copper, with regions in direct contact with copper showing nearly square lattices whereas suspended regions from thermal relaxation exhibiting nearly honeycomb or hexagonal lattice structures. The electronic density of states (DOS) correlates closely with the atomic arrangements of carbon, showing excess zero-bias tunneling conductance and nearly energy-independent DOS for strongly distorted graphene, in contrast to the linearly dispersive DOS for suspended graphene. These results suggest that graphene can interact strongly with both metallic and dielectric materials in close proximity, leading to non-negligible modifications to the electronic properties

Evidence for Strain-Induced Local Conductance Modulations in Single-Layer Graphene on SiO_2

Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO_2 substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene

Tunneling exponents in realistic quantum wires using the mean field approximation

It is demonstrated that the charge Tomonaga-Luttinger parameter $K_\rho$ of quantum wires can be estimated accurately using the Hartree-Fock approximation if carried out self consistently. The dependence of $K_\rho$ on the carrier density distinguishes different regimes of importance of correlations

Scanning Tunnelling Spectroscopic Studies of Dirac Fermions in Graphene and Topological Insulators

We report novel properties derived from scanning tunnelling spectroscopic (STS) studies of Dirac fermions in graphene and the surface state (SS) of a strong topological insulator (STI), Bi_2Se_3. For mono-layer graphene grown on Cu by chemical vapour deposition (CVD), strain-induced scalar and gauge potentials are manifested by the charging effects and the tunnelling conductance peaks at quantized energies, respectively. Additionally, spontaneous time-reversal symmetry breaking is evidenced by the alternating anti-localization and localization spectra associated with the zero-mode of two sublattices while global time-reversal symmetry is preserved under the presence of pseudo-magnetic fields. For Bi_2Se_3 epitaxial films grown on Si(111) by molecular beam epitaxy (MBE), spatially localized unitary impurity resonances with sensitive dependence on the energy difference between the Fermi level and the Dirac point are observed for samples thicker than 6 quintuple layers (QL). These findings are characteristic of the SS of a STI and are direct manifestation of strong topological protection against impurities. For samples thinner than 6-QL, STS studies reveal the openup of an energy gap in the SS due to overlaps of wave functions between the surface and interface layers. Additionally, spin-preserving quasiparticle interference wave-vectors are observed, which are consistent with the Rashba-like spin-orbit splitting

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

W=0 Pairing in (N,N)(N,N) Carbon Nanotubes away from Half Filling

We use the Hubbard Hamiltonian $H$ on the honeycomb lattice to represent the valence bands of carbon single-wall $(N,N)$ nanotubes. A detailed symmetry analysis shows that the model allows W=0 pairs which we define as two-body singlet eigenstates of $H$ with vanishing on-site repulsion. By means of a non-perturbative canonical transformation we calculate the effective interaction between the electrons of a W=0 pair added to the interacting ground state. We show that the dressed W=0 pair is a bound state for resonable parameter values away from half filling. Exact diagonalization results for the (1,1) nanotube confirm the expectations. For $(N,N)$ nanotubes of length $l$, the binding energy of the pair depends strongly on the filling and decreases towards a small but nonzero value as $l \to \infty$. We observe the existence of an optimal doping when the number of electrons per C atom is in the range 1.2$\div$1.3, and the binding energy is of the order of 0.1 $\div$ 1 meV.Comment: 16 pages, 6 figure

Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene

Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extrinsic doping. This insulating state has an associated transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly suggesting a gapped broken symmetry state that is destroyed by very weak disorder. The transition to the intrinsic broken symmetry state can be tuned by disorder, out-of-plane electric field, or carrier density

Quantum Interference Effects in Electronic Transport through Nanotube Contacts

Quantum interference has dramatic effects on electronic transport through nanotube contacts. In optimal configuration the intertube conductance can approach that of a perfect nanotube ($4e^2/h$). The maximum conductance increases rapidly with the contact length up to 10 nm, beyond which it exhibits long wavelength oscillations. This is attributed to the resonant cavity-like interference phenomena in the contact region. For two concentric nanotubes symmetry breaking reduces the maximum intertube conductance from $4e^2/h$ to $2e^2/h$. The phenomena discussed here can serve as a foundation for building nanotube electronic circuits and high speed nanoscale electromechanical devices