Josephson Junctions with a synthetic antiferromagnetic interlayer

We report measurements of the critical current vs. Co thickness in Nb/Cu/Co/Ru/Co/Cu/Nb Josephson junctions, where the inner Co/Ru/Co trilayer is a "synthetic antiferromagnet" with the magnetizations of the two Co layers coupled antiparallel to each other via the 0.6 nm-thick Ru layer. Due to the antiparallel magnetization alignment, the net intrinsic magnetic flux in the junction is nearly zero, and such junctions exhibit excellent Fraunhofer patterns in the critical current vs. applied magnetic field, even with total Co thicknesses as large as 23 nm. There are no apparent oscillations in the critical current vs. Co thickness, consistent with theoretical expectations for this situation. The critical current of the junctions decays over 4 orders of magnitude as the total Co thickness increases from 3 to 23 nm. These junctions may serve as useful templates for future explorations of spin-triplet superconducting correlations, which are predicted to occur in supercon- ducting/ferromagnetic hybrid systems in the presence of certain types of magnetic inhomogeneity.Comment: 4 pages, 5 figure

Proximity-induced density-of-states oscillations in a superconductor/strong-ferromagnet system

We have measured the evolution of the tunneling density of states (DOS) in superconductor/ferromagnet (S/F) bilayers with increasing F-layer thickness, where F in our experiment is the strong ferromagnet Ni. As a function of increasing Ni thickness, we detect multiple oscillations in the DOS at the Fermi energy from differential conductance measurements. The features in the DOS associated with the proximity effect change from normal to inverted twice as the Ni thickness increases from 1 to 5 nm.Comment: 4 pages, 4 figure

Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars

We study current-driven magnetization switching in nanofabricated magnetic trilayers, varying the magnetoresistance in three different ways. First, we insert a strongly spin-scattering layer between the magnetic trilayer and one of the electrodes, giving increased magnetoresistance. Second, we insert a spacer with a short spin-diffusion length between the magnetic layers, decreasing the magnetoresistance. Third, we vary the angle between layer magnetizations. In all cases, we find an approximately linear dependence between magnetoresistance and inverse switching current. We give a qualitative explanation for the observed behaviors, and suggest some ways in which the switching currents may be reduced.Comment: 3 pages, 4 figure

Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys

Weakly ferromagnetic alloys are being used by several groups in the study of superconducting/ferromagnetic hybrid systems. Because spin-flip and spin-orbit scattering in such alloys disrupt the penetration of pair correlations into the ferromagnetic material, it is desirable to have a direct measurement of the spin memory length in such alloys. We have measured the spin memory length at 4.2 K in sputtered Pd0.88Ni0.12 and Pd0.987Fe0.013 alloys using methods based on current-perpendicular-to-plane giant magnetoresistance. The alloys are incorporated into hybrid spin valves of various types, and the spin memory length is determined by fits of the Valet-Fert spin-transport equations to data of magnetoresistance vs. alloy thickness. For the case of PdNi alloy, the resulting values of the spin memory length are lsf(PdNi) = 2.8 +/- 0.5 nm and 5.4 +/- 0.6 nm, depending on whether or not the PdNi is exchange biased by an adjacent Permalloy layer. For PdFe, the spin memory length is somewhat longer, lsf(PdFe) = 9.6 +/- 2 nm, consistent with earlier measurements indicating lower spin-orbit scattering in that material. Unfortunately, even the longer spin memory length in PdFe may not be long enough to facilitate observation of spin-triplet superconducting correlations predicted to occur in superconducting/ferromagnetic hybrid systems in the presence of magnetic inhomogeneity.Comment: 7 pages, 8 figure

Manipulating Current-Induced Magnetization Switching

We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative orientations of the magnetic layers, and spin-dependent scattering properties of the interfaces and the bulk of the magnetic layers. We show how our data are explained in terms of current-dependent effective magnetic temperature.Comment: 6 pages, 6 figures, submitted to MMM'04 proceeding