719 research outputs found
O demente, a família e as suas necessidades
A população idosa duplicou nos últimos quarenta anos
devido à melhoria da qualidade de vida e aos progressos
da Medicina, aumentando não só a longevidade,
como a esperança média de vida sem incapacidade. No
entanto, é o mau envelhecimento, a incapacidade, a dependência
e a demência que causam medos e angústias
por vezes superiores à própria morte.
A Psicologia da Saúde tem um papel fundamental
junto do idoso e em particular do demente à volta de
um eixo individual e outro colectivo, que abordaremos
neste trabalho. As famílias dos dementes isoladas chegam
por vezes ao esgotamento. Tentaremos dar alternativas
possíveis para melhorar a qualidade de vida do
demente e da família, dando um especial relevo às suas
necessidades.In the last forty years, the percentage of the elderly
in the population doubled due to a better quality of life
and to a higher medical efficiency, resulting in a longer
life and an improved expectation of life without
disability. Still, aging in bad conditions such as a handicap,
disability, dependency and dementia frequently
causes fear and anguish, sometimes superior to those
caused by death itself.
Health Psychology is essential for aging people,
and specially the demented, in two ways: individually
and, as shown hereafter, collectively. Isolated families
of demented people sometimes get totally “burnt out”.
The purpose of this work is to focus on the needs of
the demented and their families in order to improve
their quality of life.info:eu-repo/semantics/publishedVersio
Strain and correlation of self-organized Ge_(1-x)Mn_x nanocolumns embedded in Ge (001)
We report on the structural properties of Ge_(1-x)Mn_x layers grown by
molecular beam epitaxy. In these layers, nanocolumns with a high Mn content are
embedded in an almost-pure Ge matrix. We have used grazing-incidence X-ray
scattering, atomic force and transmission electron microscopy to study the
structural properties of the columns. We demonstrate how the elastic
deformation of the matrix (as calculated using atomistic simulations) around
the columns, as well as the average inter-column distance can account for the
shape of the diffusion around Bragg peaks.Comment: 9 pages, 7 figure
Controlled switching of N\'eel caps in flux-closure magnetic dots
While magnetic hysteresis usually considers magnetic domains, the switching
of the core of magnetic vortices has recently become an active topic. We
considered Bloch domain walls, which are known to display at the surface of
thin films flux-closure features called N\'eel caps. We demonstrated the
controlled switching of these caps under a magnetic field, occurring via the
propagation of a surface vortex. For this we considered flux-closure states in
elongated micron-sized dots, so that only the central domain wall can be
addressed, while domains remain unaffected.Comment: 4 pages, 3 figure
Electrical and thermal spin accumulation in germanium
In this letter, we first show electrical spin injection in the germanium
conduction band at room temperature and modulate the spin signal by applying a
gate voltage to the channel. The corresponding signal modulation agrees well
with the predictions of spin diffusion models. Then by setting a temperature
gradient between germanium and the ferromagnet, we create a thermal spin
accumulation in germanium without any tunnel charge current. We show that
temperature gradients yield larger spin accumulations than pure electrical spin
injection but, due to competing microscopic effects, the thermal spin
accumulation in germanium remains surprisingly almost unchanged under the
application of a gate voltage to the channel.Comment: 7 pages, 3 figure
Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Electrical spin injection into semiconductors paves the way for exploring new
phenomena in the area of spin physics and new generations of spintronic
devices. However the exact role of interface states in spin injection mechanism
from a magnetic tunnel junction into a semiconductor is still under debate. In
this letter, we demonstrate a clear transition from spin accumulation into
interface states to spin injection in the conduction band of -Ge. We observe
spin signal amplification at low temperature due to spin accumulation into
interface states followed by a clear transition towards spin injection in the
conduction band from 200 K up to room temperature. In this regime, the spin
signal is reduced down to a value compatible with spin diffusion model. More
interestingly, we demonstrate in this regime a significant modulation of the
spin signal by spin pumping generated by ferromagnetic resonance and also by
applying a back-gate voltage which are clear manifestations of spin current and
accumulation in the germanium conduction band.Comment: 5 pages, 4 figure
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