Plasma electrons above Saturn's main rings: CAPS observations

We present observations of thermal ( similar to 0.6 - 100eV) electrons observed near Saturn's main rings during Cassini's Saturn Orbit Insertion (SOI) on 1 July 2004. We find that the intensity of electrons is broadly anticorrelated with the ring optical depth at the magnetic footprint of the field line joining the spacecraft to the rings. We see enhancements corresponding to the Cassini division and Encke gap. We suggest that some of the electrons are generated by photoemission from ring particle surfaces on the illuminated side of the rings, the far side from the spacecraft. Structure in the energy spectrum over the Cassini division and A-ring may be related to photoelectron emission followed by acceleration, or, more likely, due to photoelectron production in the ring atmosphere or ionosphere

Cassini observations of the thermal plasma in the vicinity of Saturn's main rings and the F and G rings

The ion mass spectrometer on Cassini detected enhanced ion flux near Saturn's main rings that is consistent with the presence of atomic and molecular oxygen ions in the thermal plasma. The ring "atmosphere'' and "ionosphere'' are likely produced by UV photosputtering of the icy rings and subsequent photoionization of O-2. The identification of the O+ and O-2(+) ions is made using time-of-flight analysis and densities and temperatures are derived from the ion counting data. The ion temperatures over the main rings are a minimum near synchronous orbit and increase with radial distance from Saturn as expected from ion pick up in Saturn's magnetic field. The O-2(+) temperatures provide an estimate of the neutral O-2 temperature over the main rings. The ion mass spectrometer also detected significant O-2(+) outside of the main rings, near the F ring. It is concluded that between the F and G rings, the heavy ion population most likely consists of an admixture of O-2(+) and water group ions O+, OH+, and H2O+

Strong hole-doping and robust resistance-decrease in proton-irradiated graphene

Great effort has been devoted in recent years to improve the electrical conductivity of graphene for use in practical applications. Here, we demonstrate the hole carrier density of CVD graphene on a SiO(2)/Si substrate increases by more than one order of magnitude to n = 3 × 10(13) cm(−2) after irradiation with a high energy 5 MeV proton beam. As a result, the dc-resistance (R) of graphene is reduced significantly by 60%. Only a negligible amount of defect is created by the irradiation. Also the hole-doped low resistance state of graphene remains robust against external perturbations. This carrier doping is achieved without requiring the bias-gate voltage as is the case for other field effect devices. We make two important observations, (i) occurrence of the doping after the irradiation is turned off (ii) indispensability of the SiO(2)-layer in the substrate, which leads to a purely electronic mechanism for the doping where electron-hole pair creation and interlayer Coulomb attraction play a major role. A flux-dependent study predicts that an ultrahigh doping may be obtained by longer irradiation. We expect the irradiation doping method could be applied to other atomically thin solids, facilitating the fundamental study and application of the 2d materials