Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices

How Unsplittable-Flow-Covering helps Scheduling with Job-Dependent Cost Functions

Generalizing many well-known and natural scheduling problems, scheduling with job-specific cost functions has gained a lot of attention recently. In this setting, each job incurs a cost depending on its completion time, given by a private cost function, and one seeks to schedule the jobs to minimize the total sum of these costs. The framework captures many important scheduling objectives such as weighted flow time or weighted tardiness. Still, the general case as well as the mentioned special cases are far from being very well understood yet, even for only one machine. Aiming for better general understanding of this problem, in this paper we focus on the case of uniform job release dates on one machine for which the state of the art is a 4-approximation algorithm. This is true even for a special case that is equivalent to the covering version of the well-studied and prominent unsplittable flow on a path problem, which is interesting in its own right. For that covering problem, we present a quasi-polynomial time $(1+\epsilon)$-approximation algorithm that yields an $(e+\epsilon)$-approximation for the above scheduling problem. Moreover, for the latter we devise the best possible resource augmentation result regarding speed: a polynomial time algorithm which computes a solution with \emph{optimal }cost at $1+\epsilon$ speedup. Finally, we present an elegant QPTAS for the special case where the cost functions of the jobs fall into at most $\log n$ many classes. This algorithm allows the jobs even to have up to $\log n$ many distinct release dates.Comment: 2 pages, 1 figur

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater

A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz

AlGaAs lasers with micro-cleaved mirrors suitable for monolithic integration

A technique has been developed for cleaving the mirrors of AlGaAs lasers without cleaving the substrate. Micro-cleaving involves cleaving a suspended heterostructure cantilever by ultrasonic vibrations. Lasers with microcleaved mirrors have threshold currents and quantum efficiencies identical to those of similar devices with conventionally cleaved mirrors

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Experimental and theoretical studies indicate that a high-frequency laser with bandwidths up to X-band frequencies (~> 10 GHz) should be one having a short cavity with a window structure, and preferably operating at low temperatures. These designs would accomplish the task of shortening the photon lifetime, increasing the intrinsic optical gain, and increasing the internal photon density without inflicting mirror damage. A modulation bandwidth of >8 GHz has been achieved using a 120-µm laser without any special window structure at room temperature

Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers

It is demonstrated experimentally that the intrinsic modulation response of injection lasers can be modified by reducing mirror reflectivities, which leads to suppression of relaxation oscillation resonance and a reduction of nonlinear distortions up to multi-GHz frequencies. A totally flat response with a 3-dB bandwidth of 5 GHz was obtained using antireflection coated buried heterostructure lasers fabricated on a semi-insulating substrate. Harmonic distortions were below 40 dB within the entire 3-dB bandwidth. These results are in accord with theoretical predictions based on an analysis which include the effects of superluminescence in the laser cavity

Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm

A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, a maximum CW power of 130mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12GHz at an output power of 52mW was observed