Improved Simulation of the Mass Charging for ASTROD I

The electrostatic charging of the test mass in ASTROD I (Astrodynamical Space Test of Relativity using Optical Devices I) mission can affect the quality of the science data as a result of spurious Coulomb and Lorentz forces. To estimate the size of the resultant disturbances, credible predictions of charging rates and the charging noise are required. Using the GEANT4 software toolkit, we present a detailed Monte Carlo simulation of the ASTROD I test mass charging due to exposure of the spacecraft to galactic cosmic-ray (GCR) protons and alpha particles (3He, 4He) in the space environment. A positive charging rate of 33.3 e+/s at solar minimum is obtained. This figure reduces by 50% at solar maximum. Based on this charging rate and factoring in the contribution of minor cosmic-ray components, we calculate the acceleration noise and stiffness associated with charging. We conclude that the acceleration noise arising from Coulomb and Lorentz effects are well below the ASTROD I acceleration noise limit at 0.1 mHz both at solar minimum and maximum. The coherent Fourier components due to charging are investigated, it needs to be studied carefully in order to ensure that these do not compromise the quality of science data in the ASTROD I mission.Comment: 20 pages, 14 figures, submitted to International Journal of Modern Physics

Bogoliubov Hamiltonian as Derivative of Dirac Hamiltonian via Braid Relation

In this paper we discuss a new type of 4-dimensional representation of the braid group. The matrices of braid operations are constructed by q-deformation of Hamiltonians. One is the Dirac Hamiltonian for free electron with mass m, the other, which we find, is related to the Bogoliubov Hamiltonian for quasiparticles in $^3$He-B with the same free energy and mass being m/2. In the process, we choose the free q-deformation parameter as a special value in order to be consistent with the anyon description for fractional quantum Hall effect with $\nu = 1/2$.Comment: 3 pages, 5 figure

Conductance plateau in quantum spin transport through an interacting quantum dot

Quantum spin transport is studied in an interacting quantum dot. It is found that a conductance "plateau" emerges in the non-linear charge conductance by a spin bias in the Kondo regime. The conductance plateau, as a complementary to the Kondo peak, originates from the strong electron correlation and exchange processes in the quantum dot, and can be regarded as one of the characteristics in quantum spin transport.Comment: 5 pages, 5 figure

Partial spin freezing in the quasi-two-dimensional La2(Cu,Li)O4

In conventional spin glasses, the magnetic interaction is not strongly anisotropic and the entire spin system freezes at low temperature. In La2(Cu,Li)O4, for which the in-plane exchange interaction dominates the interplane one, only a fraction of spins with antiferromagnetic correlations extending to neighboring planes become spin-glass. The remaining spins with only in-plane antiferromagnetic correlations remain spin-liquid at low temperature. Such a novel partial spin freezing out of a spin-liquid observed in this cold neutron scattering study is likely due to a delicate balance between disorder and quantum fluctuations in the quasi-two dimensional S=1/2 Heisenberg system.Comment: 4 pages, 4 figure

Low-lying S-wave and P-wave Dibaryons in a Nodal Structure Analysis

The dibaryon states as six-quark clusters of exotic QCD states are investigated in this paper. With the inherent nodal surface structure analysis, the wave functions of the six-quark clusters (in another word, the dibaryons) are classified. The contribution of the hidden color channels are discussed. The quantum numbers of the low-lying dibaryon states are obtained. The States $[\Omega\Omega]_{(0,0^{+})}$, $[\Omega\Omega]_{(0,2^{-})}$, $[\Xi^{*}\Omega]_{(1/2,0^{+})}$, $[\Sigma^{*}\Sigma^{*}]_{(0,4^{-})}$ and the hidden color channel states with the same quantum numbers are proposed to be the candidates of dibaryons, which may be observed in experiments.Comment: 29 pages, 2 figure

Off-Diagonal Long-Range Order: Meissner Effect and Flux Quantization

There has been a proof by Sewell that the hypothesis of off-diagonal long-range order in the reduced density matrix $\rho _2$ implies the Meissner effect. We present in this note an elementary and straightforward proof that not only the Meissner effect but also the property of magnetic flux quantization follows from the hypothesis. It is explicitly shown that the two phenomena are closely related, and phase coherence is the origin for both.Comment: 11 pages, Latex fil

Mechanistic Study Of Plasma Damage Of Low k Dielectric Surfaces

Plasma damage to low k dielectric materials was investigated from a mechanistic point of view. Low k dielectric films were treated by plasma Ar, O-2, N-2/H-2, N-2 and H-2 in a standard RIE chamber and the damage was characterized by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS), X-Ray Reflectivity (XRR), Fourier Transform Infrared Spectroscopy (FTIR) and Contact Angle measurements. Both carbon depletion and surface densification were observed on the top surface of damaged low k materials while the bulk remained largely unaffected. Plasma damage was found to be a complicated phenomenon involving both chemical and physical effects, depending on chemical reactivity and the energy and mass of the plasma species. A downstream hybrid plasma source with separate ions and atomic radicals was employed to study their respective roles in the plasma damage process. Ions were found to play a more important role in the plasma damage process. The dielectric constant of low k materials can increase up to 20% due to plasma damage and we attributed this to the removal of the methyl group making the low k surface hydrophilic. Annealing was generally effective in mitigating moisture uptake to restore the k value but the recovery was less complete for higher energy plasmas. Quantum chemistry calculation confirmed that physisorbed water in low k materials induces the largest increase of dipole moments in comparison with changes of surface bonding configurations, and is primarily responsible for the dielectric constant increase.Microelectronics Research Cente