4 research outputs found
Growth Pattern of Silicon Clusters
Tight-binding molecular dynamics simulated annealing technique is employed to
search for the ground state geometries of silicon clusters containing 11-17
atoms. These studies revealed that layer formation is the dominant growth
pattern in all these clusters. Fullerene-like precursor structures consisting
of fused pentagon rings are also observed. The atoms in all these clusters
exhibit pronounced preference for residing on the surface.Comment: Modern Physics Letters B in press, 9 pages + 2 figures. PostScript
version available at ftp://ramanujan.chem.nyu.edu/pub/mplb1.p