Analysis of Participation of Banking Institutions in the Strategic Development Programs of the Russian Arctic

The article examines the issues of financing the development of the Russian Arctic territories and the participation of banking structures in this process. A set of strategic documents for the development of the Arctic zone of the Russian Federation is considered, the dynamics of approved amounts of funding for Arctic development programs are analyzed, and the structure of sources of financing for investment in fixed assets in regions whose territory belongs to the Arctic zone of the Russian Federation is studied. It is concluded that banks are not sufficiently involved in investment activities in most of the Arctic regions (except the Yamal-Nenets Autonomous Okrug, where the active role of banking institutions is due to participation in the financing of large gas and oil production projects in the Northern part of the region), and in recent years, foreign banking structures decline investment activity. The article describes the prospects of participation of the largest Russian banking structures in implementing large-scale projects in the Arctic, such as VTB Bank, Sberbank of Russia, and Gazprombank. The analysis of the possibilities of concentration of banking capital, as well as the use of mechanisms of public-private partnership based on the creation of a single financial institution with state participation is performed. The most effective form of improving the efficiency of financial flows management in the framework of strategic development of the Arctic territories can be the creation of The Bank for reconstruction and development of the Arctic

Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374

Electronic structure, charge transfer, and intrinsic luminescence of gadolinium oxide nanoparticles: Experiment and theory

The cubic (c) and monoclinic (m) polymorphs of Gd2O3 were studied using the combined analysis of several materials science techniques - X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy. Density functional theory (DFT) based calculations for the samples under study were performed as well. The cubic phase of gadolinium oxide (c-Gd2O3) synthesized using a precipitation method exhibits spheroidal-like nanoclusters with well-defined edges assembled from primary nanoparticles with an average size of 50 nm, whereas the monoclinic phase of gadolinium oxide (m-Gd2O3) deposited using explosive pyrolysis has a denser structure compared with natural gadolinia. This phase also has a structure composed of three-dimensional complex agglomerates without clear-edged boundaries that are ~21 nm in size plus a cubic phase admixture of only 2 at. % composed of primary edge-boundary nanoparticles ~15 nm in size. These atomic features appear in the electronic structure as different defects ([Gd...O-OH] and [Gd...O-O]) and have dissimilar contributions to the charge-transfer processes among the appropriate electronic states with ambiguous contributions in the Gd 5p - O 2s core-like levels in the valence band structures. The origin of [Gd...O-OH] defects found by XPS was well-supported by PL analysis. The electronic and atomic structures of the synthesized gadolinias calculated using DFT were compared and discussed on the basis of the well-known joint OKT-van der Laan model, and good agreement was established.Comment: 27 pages, 10 figures, accepted in Appl. Surf. Sc

Delayed crystallization of ultrathin Gd2O3 layers on Si(111) observed by in situ X-ray diffraction

We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition

Electronic structure of the interface of aluminum nitride with Si(100)

The band alignment at the interfaces of Si(100) with amorphous (a-) and crystallized (c-) AlN layers was analyzed using internal photoemission and photoconductivity spectroscopy. The bandgap of thin a-AlN layers grown using atomic layer deposition is found to be 5.8±0.1 eV, widening to 6.5±0.2 eV after annealing induced crystallization into the wurtzite phase. Internal photoemission of electrons from the Si valence band to the AlN conduction band was found to exhibit the same energy threshold of 3.2±0.1 eV in amorphous and crystallized AlN. The energy band diagrams of a-AlN/Si (100) and c-AlN/Si (100) interfaces are established. © 2008 American Institute of Physics

Mechanical properties of AIN/Si structures under conditions of low-flux beta irradiations

The mechanical properties of AIN/Si structures under conditions of beta irradiation with fluence F = 3.6 × 1010 cm-2 were investigated by the dynamic micro-and nanoindentation methods. A beta-induced increase in radial cracks in the area of indentor imprints was discovered. © Allerton Press, Inc., 2010

Mechanical properties of AIN/Si structures under conditions of low-flux beta irradiations

The mechanical properties of AIN/Si structures under conditions of beta irradiation with fluence F = 3.6 × 1010 cm-2 were investigated by the dynamic micro-and nanoindentation methods. A beta-induced increase in radial cracks in the area of indentor imprints was discovered. © Allerton Press, Inc., 2010

Impact of magnetite nanoparticle incorporation on optical and electrical properties of nanocomposite LbL assemblies.

Optical and electrical properties of polyelectrolyte/iron oxide nanocomposite planar films on silicon substrates were investigated for different amount of iron oxide nanoparticles incorporated in the films. The nanocomposite assemblies prepared by the layer-by-layer assembly technique were characterized by ellipsometry, atomic force microscopy, and secondary ion mass-spectrometry. Absorption spectra of the films reveal a shift of the optical absorption edge to higher energy when the number of deposited layers decreases. Capacitance-voltage and current-voltage measurements were applied to study the electrical properties of metal-oxide-semiconductor structures prepared by thermal evaporation of gold electrodes on nanocomposite films. The capacitance-voltage measurements show that the dielectric constant of the film increases with the number of deposited layers and the fixed charge and the trapped charge densities have a negative sign