High speed single photon detection in the near-infrared

InGaAs avalanche photodiodes (APDs) are convenient for single photon detection in the near-infrared (NIR) including the fibre communication bands (1.31/1.55 $\mu$m). However, to suppress afterpulse noise due to trapped avalanche charge, they must be gated with MHz repetition frequencies, thereby severely limiting the count rate in NIR applications. Here we show gating frequencies for InGaAs-APDs well beyond 1 GHz. Using a self-differencing technique to sense much weaker avalanches, we reduce drastically afterpulse noise. At 1.25 GHz, we obtain a detection efficiency of 10.8% with an afterpulse probability of 6.16%. In addition, the detector features low jitter (55 ps) and a count rate of 100 MHz

Spin-orbit coupling in interacting quasi-one-dimensional electron systems

We present a new model for the study of spin-orbit coupling in interacting quasi-one-dimensional systems and solve it exactly to find the spectral properties of such systems. We show that the combination of spin-orbit coupling and electron-electron interactions results in: the replacement of separate spin and charge excitations with two new kinds of bosonic mixed-spin-charge excitation, and a characteristic modification of the spectral function and single-particle density of states. Our results show how manipulation of the spin-orbit coupling, with external electric fields, can be used for the experimental determination of microscopic interaction parameters in quantum wires.Comment: 5 pages including 4 figures; RevTeX; to appear in Phys.Rev.Let

Metal-Insulator oscillations in a Two-dimensional Electron-Hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.Comment: 4 pages, 5 Postscript figures: revised versio

Measuring measurement

Measurement connects the world of quantum phenomena to the world of classical events. It plays both a passive role, observing quantum systems, and an active one, preparing quantum states and controlling them. Surprisingly - in the light of the central status of measurement in quantum mechanics - there is no general recipe for designing a detector that measures a given observable. Compounding this, the characterization of existing detectors is typically based on partial calibrations or elaborate models. Thus, experimental specification (i.e. tomography) of a detector is of fundamental and practical importance. Here, we present the realization of quantum detector tomography: we identify the optimal positive-operator-valued measure describing the detector, with no ancillary assumptions. This result completes the triad, state, process, and detector tomography, required to fully specify an experiment. We characterize an avalanche photodiode and a photon number resolving detector capable of detecting up to eight photons. This creates a new set of tools for accurately detecting and preparing non-classical light.Comment: 6 pages, 4 figures,see video abstract at http://www.quantiki.org/video_abstracts/0807244

Quantitative Agreement between Electron-Optical Phase Images of WSe2WSe_2 and Simulations Based on Electrostatic Potentials that Include Bonding Effects

The quantitative analysis of electron-optical phase images recorded using off-axis electron holography often relies on the use of computer simulations of electron propagation through a sample. However, simulations that make use of the independent atom approximation are known to overestimate experimental phase shifts by approximately 10%, as they neglect bonding effects. Here, we compare experimental and simulated phase images for few-layer WSe2. We show that a combination of pseudopotentials and all-electron density functional theory calculations can be used to obtain accurate mean electron phases, as well as improved atomic-resolution spatial distribution of the electron phase. The comparison demonstrates a perfect contrast match between experimental and simulated atomic-resolution phase images for a sample of precisely known thickness. The low computational cost of this approach makes it suitable for the analysis of large electronic systems, including defects, substitutional atoms, and material interfaces

Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy

Functionalisation of two-dimensional (2-D) materials via low energy ion implantation could open possibilities for fabrication of devices based on such materials. Nanoscale patterning and/or electronically doping can thus be achieved, compatible with large scale integrated semiconductor technologies. Using atomic resolution High Angle Annular Dark Field (HAADF) scanning transmission electron microscopy supported by image simulation, we show that sites and chemical nature of individual implants/ dopants in graphene, as well as impurities in hBN, can uniquely and directly be identified on grounds of their position and their image intensity in accordance with predictions from Z-contrast theories. Dopants in graphene (e.g., N) are predominantly substitutional. In other 2-Ds, e.g. dichalcogenides, the situation is more complicated since implants can be embedded in different layers and substitute for different elements. Possible configurations of Se-implants in MoS2 are discussed and image contrast calculations performed. Implants substituting for S in the top or bottom layer can undoubtedly be identified. We show, for the first time, using HAADF contrast measurement that successful Se-integration into MoS2 can be achieved via ion implantation, and we demonstrate the possibility of HAADF image contrast measurements for identifying impurities and dopants introduced into in 2-Ds

Quantum dots for single photon and photon pair technology

The excitation of a quantum dot from its ground state depends on the probabilistic nature of carrier capture, and thus radiative decay can occur via a multi photon cascade. It is also possible that non-radiative initial exciton states can be formed when the spins of the component electron and heavy hole have the same sign. Time integrated and time resolved micro-photoluminescence experiments are presented that reveal the broader properties of single photon and multi-photon emission from InAs quantum dots, including single photon emission, polarisation correlated photon emission, and dark state blocking, and their implications in terms of quantum information technology are discussed

Visibility of two-dimensional layered materials on various substrates

For the investigation of 2D layered materials such as graphene, transition-metal dichalcogenides, boron nitride, and their heterostructures, dedicated substrates are required to enable unambiguous identification through optical microscopy. A systematic study is conducted, focusing on various 2D layered materials and substrates. The simulated colors are displayed and compared with microscopy images. Additionally, the issue of defining an appropriate index for measuring the degree of visibility is discussed. For a wide range of substrate stacks, layer thicknesses for optimum visibility are given along with the resulting sRGB colors. Further simulations of customized stacks can be conducted using our simulation tool, which is available for download and contains a database featuring a wide range of materials

Magnetotunneling spectroscopy of one-dimensional wires

We present results of a detailed study of equilibrium magnetotunneling between an array of independent identical one-dimensional wires and a two-dimensional electron gas. From the tunneling differential conductance, measured as a function of the in-plane magnetic field, we find directly the number of occupied one-dimensional subbands, the subband energies, and the wave functions as a function of the strength of confinement in these wires. As many as 14 one-dimensional subbands were probed. We show that an analysis of our results based on the Bardeen tunneling Hamiltonian formalism allows the determination of the functional form of one-dimensional confining potentials. We give two examples, one for a narrow wire and one for a wide wire