Comparisons of instability in device characteristics at high temperature for thin-film SOI power n- and p- channel MOSFETs

This paper investigate instability in device characteristics related to the hot carrier effect, Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature (PBTI) under DC stress for n- and p-channel thin-film Silicon on Insulator (SOI) power MOSFET at high temperature. The threshold voltage shift increases as the temperature rises due to PBTI for n-MOSFET and NBTI for p-MOSFET. Drain Avalanche Hot Carrier (DAHC) occurs when the gate stress voltage is near the threshold voltage and Channel Hot Carrier (CHC) occurs when the gate voltage is high. The threshold voltage shift and the degradation rate of on-resistance of the n-MOSFET is larger than that of the p-MOSFET due to the difference in the impact ionization coefficient between electrons and holes.2020 IEEE Region 10 Conference (TENCON), 16-19 November, 2020, Osaka, Japan（新型コロナ感染拡大に伴い、オンライン開催に変更

Analysis of Radioactive Elements in Testes of Large Japanese Field Mice Using an Electron Probe Micro-Analyser after the Fukushima Accident

The Fukushima Daiichi nuclear power plant (FDNPP) accident drew global attention to the health risks of radiation exposure. The large Japanese field mice (Apodemus speciosus) are rodents endemic to, and distributed throughout, Japan. This wild rodent live in and around the ex-evacuation zone on the ground surface and/or underground. In this study, we evaluated the effect of chronic radiation exposure associated with FDNPP accident on the testes of large Japanese field mice. Morphological analysis and electron-prove X-ray microanalysis (EPMA) was undertaken on the testes. Morphological analysis of testes based on H&E staining showed that the spermatogenesis was observed normally in the breeding season of wild mice in the heavily contaminated area. However, caesium (Cs) was not detected in all testes of wild mice from FDNPP ex-evacuation zone. In conclusion, even if the testes and the process of spermatogenesis are hypersensitive to radiation, we could not detect radiation effects on the spermatogenesis and Cs in the examined large Japanese field mice testes following chronic radiation exposure associated with the FDNPP accident

Comparisons of instability in device characteristics at high temperature for thin-film SOI power n- and p- channel MOSFETs

This paper investigate instability in device characteristics related to the hot carrier effect, Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature (PBTI) under DC stress for n- and p-channel thin-film Silicon on Insulator (SOI) power MOSFET at high temperature. The threshold voltage shift increases as the temperature rises due to PBTI for n-MOSFET and NBTI for p-MOSFET. Drain Avalanche Hot Carrier (DAHC) occurs when the gate stress voltage is near the threshold voltage and Channel Hot Carrier (CHC) occurs when the gate voltage is high. The threshold voltage shift and the degradation rate of on-resistance of the n-MOSFET is larger than that of the p-MOSFET due to the difference in the impact ionization coefficient between electrons and holes.2020 IEEE Region 10 Conference (TENCON), 16-19 November, 2020, Osaka, Japan（新型コロナ感染拡大に伴い、オンライン開催に変更