The lead salt quantum dot intermediate band solar cell

We propose a new kind of quantum dot (QD) materials for the implementation of the intermediate band solar cell (IBSC) [1]. The materials are formed by lead salt QDs of the family IV-VI (PbTe, PbSe or PbS) embedded in a semiconductor of the family II-VI (Cd1-xMgxTe, CdxZn1-xTe, and CdS1-xSex or ZnSe1-xTex, respectively). These QDs are not nucleated due to lattice mismatch, as it is the case of the InAs/GaAs QD material system grown by the Stranski-Krastanov (S-K) mode. In these materials, the QDs precipitate due to the difference in lattice type: the QD lead salt material crystallizes in the rocksalt structure, while the II-VI host material has the zincblende structure [2]. Therefore, it is possible to use lattice-matched QD/host combinations, avoiding all the strain-related problems found in previous QD-IBSC developments. In this paper we discuss the properties of the lead salt QD materials and propose that they are appropriate to overcome the fundamental drawbacks of present III-V-based QD-IBSC prototypes. We also calculate the band diagram for some examples of IV-VI/II-VI QD materials. The detailed balance efficiency limit of QD-IBSCs based on the studied materials is found to be over 60% under maximum concentration

Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.

The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV. Traditional photovoltaic materials, such as Si and GaAs, are not appropriate to produce IB devices because their gaps are too narrow. To overcome this problem, we propose the implementation of a multi-junction device consisting of an IBSC combined with a single gap cell. We calculate the efficiency limits using the detailed balance model and conclude that they are very high (> 60% under maximum concentration) for any fundamental bandgap from 0.7 to 3.6 eV in the IBSC inserted in the tandem. In particular, the two-terminal tandem of a GaAs-based IBSC current matched to an optimized AlGaAs top cell has an efficiency limit as high as 64%

Radiative thermal escape in intermediate band solar cells

To achieve high efficiency, the intermediate band (IB) solar cell must generate photocurrent from sub-bandgap photons at a voltage higher than that of a single contributing sub-bandgap photon. To achieve the latter, it is necessary that the IB levels be properly isolated from the valence and conduction bands. We prove that this is not the case for IB cells formed with the confined levels of InAs quantum dots (QDs) in GaAs grown so far due to the strong density of internal thermal photons at the transition energies involved. To counteract this, the QD must be smaller

A review of the novel concepts in photovoltaics through their experimental achievements

The intermediate band solar cell (IBSC), the multiple exciton generation solar cell (MEGSC) and the hot carrier solar cell (HCSC) are three novel concepts in photovoltaics which aim to achieve high efficiency devices. In this paper we assess to what extent their physical principles of operation have been experimentally verified. It is found that there is experimental evidence supporting the underlying theory for all three

Review of experimental results related to the operation of intermediate band solar cells

The intermediate band solar cell (IBSC) has drawn the attention of the scientific community as a means to achieve high-efficiency solar cells. Complete IBSC devices have been manufactured using quantum dots, highly mismatched alloys, or bulk materials with deep-level impurities. Characterization of these devices has led, among other experimental results, to the demonstration of the two operating principles of an IBSC: the production of the photocurrent from the absorption of two below bandgap energy photons and the preservation of the output voltage of the solar cell. This study offers a thorough compilation of the most relevant reported results for the variety of technologies investigated and provides the reader with an updated record of IBSC experimental achievements. A table condensing the reported experimental results is presented, which provides information at a glance about achievements, as well as pending results, for every studied technology

Predicted photoreflectance signatures on QD selective contacts for hot carrier solar cells

The CO2 emission of our present energy transformation processes, based mainly on burning fossil fuels, is possibly the main cause of global climatic change. The photovoltaic conversion of solar energy is a clean way of producing which for sustainability should (and most probably will) become a major source of electricity. The sun is a huge resource but relatively diluted and it is reasonable to expect that only high efficiency extraction can be cost effective for mass exploitation. New concepts are neccessary such as hot carrier solar cells

Intraband absorption for normal illumination in quantum dot intermediate band solar cells

In the current intermediate band solar cells made with InAs quantum dots (QDs) in GaAs, the transitions by absorption of photons between the intermediate band and the conduction band for illumination normal to the cell surface is very weak or, more often, undetectable. We model the QD as a parallelepiped potential well and calculate the envelope function of the electron wavefunctions. By obtaining the dipolar matrix elements we find that, with the present shapes, this absorption is forbidden or very weak. Deeper QDs with smaller base dimensions should be made to permit this absorption

Understanding experimental characterization of intermediate band solar cell

An intermediate band solar cell is a novel photovoltaic device with the potential to exceed the efficiency of single gap solar cells. In the last few years, several prototypes of these cells, based on different technologies, have been reported. Since these devices do not yet perform ideally, it is sometimes difficult to determine to what extent they operate as actual intermediate band solar cells. In this article we provide the essential guidelines to interpret conventional experimental results (current-voltage plots, quantum efficiency, etc.) associated with their characterization. A correct interpretation of these results is essential in order not to mislead the research efforts directed towards the improvement of the efficiency of these devices

Intermediate bands and non radiative recombination

The use of half-filled intermediate band materials has been proposed as a means to implement solar cells with efficiency exceeding that of single gap solar cells. An intermediate band can be regarded, at first, as a mere collection of energy levels within the semiconductor bandgap. However, its recombination properties are expected to be different from those traditionally attributed to deep levels. Hence, while deep centers behave mainly as non-radiative recombination centers, the IB is expected to exhibit negligible non-radiative recombination. It is the purpose of this work to study these phenomena by exploiting computational models based on ab-initio calculations