Observation of a Highly Spin Polarized Topological Surface State in GeBi2_{2}Te4_{4}

Spin polarization of a topological surface state for GeBi$_2$Te$_4$, the newly discovered three-dimensional topological insulator, has been studied by means of the state of the art spin- and angle-resolved photoemission spectroscopy. It has been revealed that the disorder in the crystal has a minor effect on the surface state spin polarization and it exceeds 75% near the Dirac point in the bulk energy gap region ($\sim$180 meV). This new finding for GeBi$_{2}$Te$_{4}$ promises not only to realize a highly spin polarized surface isolated transport but to add new functionality to its thermoelectric and thermomagnetic properties.Comment: 5 pages, 4 figure

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi2_2Te4_4

Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the N\'eel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi2Te4A

Modification of the gap at the Dirac point (DP) in axion antiferromagnetic topological insulator MnBi2Te4 and its electronic and spin structure have been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation at various temperatures (9-35 K), light polarizations and photon energies. We have distinguished both large (60-70 meV) and reduced (< 20 meV) gaps at the DP in the ARPES dispersions, which remain open above the Neel temperature (T-N = 24.5 K). We propose that the gap above T-N remains open due to a short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for the "large gap" sample and apparently significantly reduced effective magnetic moment for the "reduced gap" sample. These observations can be explained by a shift of the Dirac cone (DC) state localization towards the second Mn layer due to structural disturbance and surface relaxation effects, where DC state is influenced by compensated opposite magnetic moments. As we have shown by means of ab-initio calculations surface structural modification can result in a significant modulation of the DP gap.The authors acknowledge support by the Saint Petersburg State University (Grant No. 51126254), Russian Science Foundation (Grant No. 18-12-00062 in part of the photoemission measurements and Grant No. 18-12-00169 in part of the electronic band structure calculations) and by Russian Foundation of Basic Researches (Grants Nos. 18-52-06009 and 20-32-70179) and Science Development Foundation under the President of the Republic of Azerbaijan (Grant No. EI F-BGM-4-RFTF1/2017-21/04/1-M-02). A. Kimura was financially supported by KAKENHI (Grants No. 17H06138, No. 17H06152, and No. 18H03683). S.V.E. and E.V.C. acknowledge support by the Fundamental Research Program of the State Academies of Sciences (line of research III.23.2.9). The authors kindly acknowledge the HiSOR staff and A. Harasawa at ISSP for technical support and help with the experiment. The ARPES measurements at HiSOR were performed with the approval of the Proposal Assessing Committee (Proposal Numbers: 18BG027 and 19AG048). XAS and XMCD measurements were performed at BL23SU of SPring-8 (Proposal Nos. 2018A3842 and 2018B3842) under the Shared Use Program of JAEA Facilities (Proposal Nos. 2018A-E25 and 2018B-E24) with the approval of Nanotechnology Platform project supported by MEXT, Japan (Proposal Nos. A-18-AE-0020 and A-18-AE-0042). M. M. Otrokov acknowledges the support by Spanish Ministerio de Ciencia e Innovacion (Grant no. PID2019-103910GB-I00). K. Yaji was financially supported by KAKENHI (Grants No. 18K03484)

Temperature studies of Raman spectra in MnBi2Te4 and MnSb2Te4 magnetic topological insulators

Raman spectra of magnetic topological crystalline insulators in a wide temperature range including the magnetic ordering region are studied in detail. The anharmonicity parameters and Grüneisen mode parameters of Raman-active phonons in the studied crystals have been determined. It has been shown that the temperature dependence of the frequency of the (~48 cm–1) phonon in MnBi2Te4 coincides within ±0.1 cm–1 with the standard anharmonic model disregarding the spin–phonon coupling. The polarization dependences of Raman spectra in the MnSb2Te4 crystals indicate that Sb and Mn atoms are strongly mixed in them unlike the isostructural MnBi2Te4 crystals.This work was supported by the Azerbaijan Ministry of Science and Education (program “Development of the Preparation Technology of Multifunctional Convertors Based on Nanostructures”). E.V.C. acknowledges the s-upport of St. Petersburg State University (project no. 94031444).Peer reviewe

Impact of Co atoms on the electronic structure of Bi2Te3 and MnBi2Te4 topological insulators

This work is devoted to an experimental investigation of the electronic structure of the surface of topological insulators of various stoichiometry during the adsorption of Co atoms. Changes in the surface electronic structure of Bi2Te3 and MnBi2Te4 systems upon deposition of Co atoms at various temperatures have been studied using the methods of angle-resolved photoemission spectroscopy, as well as X-ray photoelectron spectroscopy. It is suggested that binding of the adsorbed Co atoms to the substrate surface modifies Dirac point position. The observed changes are associated with the possible formation of magnetic Co-containing ordered surface alloys.This work was supported by the St. Petersburg State University, grant no. 73028629, the Russian Science Foundation, grant no. 18-12-00062, the Russian Foundation for Basic Research, grant nos. 20-32-70127, 21-52-12024, and 18-29-12094, the Science Development Foundation of the President of Azerbaijan, grant no. EIF-BGM-4-RFTF-1/2017-21/04/1-M-02, and in the framework of the state assignment of Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, and the Rzhanov Institute of Semiconductors Physics, Siberian Branch of the Russian Academy of Sciences.Peer reviewe

The charge transport mechanism in a new magnetic topological insulator MnBi0.5Sb1.5Te4

A new layered magnetic topological insulator with the composition MnBi0.5Sb1.5Te4 is obtained. The electrical conductivity in the plane of the layers and in the direction normal to the layers is studied in the range of temperatures of 1.4–300 K. It is found that a “metallic” character of the temperature dependence of the resistivity ρ(T) is observed in the range of temperatures of 50–300 K in both directions. Below T = 50 K, the value of ρ increases and demonstrates an uncommon temperature dependence with a characteristic feature in the region of the critical temperature Tc = 23 K. The increase in the resistance in the temperature range of 50–23 K is determined by the spin fluctuations and magnetic phase transition. Below Tc and down to 1.4 K, ρ(T) demonstrates a behavior characteristic for the weak localization effect, which is confirmed by the analysis of the data obtained when studying magnetoresistance.This work was financially supported by the Science Development Foundation under the President of the Republic of Azerbaijan (grants nos. EİF-BGM-4-RFTF-1/2017-21/04/1-M-02, EİF/MQM/Elm-Tehsil-1-2016-1(26)-71/16/1), Russian Foundation for Basic Research (grant no. 18-52-06009), St. Petersburg State University (grant no. 73028629) as well as the Spanish Ministerio de Ciencia e Innovación Foundation (grant no. PID2019-103910GB-I00).Peer reviewe

Topologically nontrivial phase-change compound GeSb2Te4

Chalcogenide phase-change materials show strikingly contrasting optical and electrical properties, which has led to their extensive implementation in various memory devices. By performing spin-, time-, and angle-resolved photoemission spectroscopy combined with the first-principles calculation, we report the experimental results that the crystalline phase of GeSb2Te4 is topologically nontrivial in the vicinity of the Dirac semimetal phase. The resulting linearly dispersive bulk Dirac-like bands that cross the Fermi level and are thus responsible for conductivity in the stable crystalline phase of GeSb2Te4 can be viewed as a 3D analogue of graphene. Our finding provides us with the possibility of realizing inertia-free Dirac currents in phase-change materials.The ARPES experiments were performed with the approval of the Proposal Assessing Committee of HSRC (Proposal No. 18BG039). The TARPES measurements were jointly carried out by the Laser and Synchrotron Research Center of the Institute for Solid State Physics at the University of Tokyo. This work was financially supported by KAKENHI (Grant No. 17H06138, No. 17H06152, No. 18H03683, No. 18H01148). This work was also supported by the ‘‘Tomsk State University competitiveness improvement programme’’ (Project No. 8.1.01.2018), by Saint Petersburg State University (Project ID 51126254), and by Russian Science Foundation No. 17-12-01047 (in the crystal growth part). T.V.M. and I.P.R. acknowledge support from Ministry of Education and Science of the Russian Federation (State Task No. 0721-2020-0033) (study of intermixed crystalline phase of GST-124). Calculations were performed at the SKIF-Cyberia supercomputer of Tomsk State University (Russian Federation). K.A.K. acknowledges RFBR Grant 17-08-00955 and a state contract of IGM SB RAS.Peer reviewe