23 research outputs found

    Understanding individuals' proclivity for novelty seeking

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    International audienceHuman mobility literature is limited in their ability to capture the novelty-seeking or the exploratory tendency of individuals. Mainly, the vast majority of mobility prediction models rely uniquely on the history of visited locations (as captured in the input dataset) to predict future visits. This hinders the prediction of new unseen places and reduces prediction accuracy. In this paper, we show that a two-dimensional modeling of human mobility, which explicitly captures both regular and exploratory behaviors, yields a powerful characterization of users. Using such model, we identify the existence of three distinct mobility profiles with regard to the exploration phenomenon-Scouters (i.e., extreme explorers), Routiners (i.e., extreme returners), and Regulars (i.e., without extreme behavior). Further, we extract and analyze the mobility traits specific to each profile. We then investigate temporal and spatial patterns in each mobility profile and show the presence of recurrent visiting behavior of individuals even in their novelty-seeking moments. Our results unveil important novelty preferences of people, which are ignored by literature prediction models. Finally, we show that prediction accuracy is dramatically affected by exploration moments of individuals. We then discuss how our profiling methodology could be leveraged to improve prediction

    Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy

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    International audienceAtom Probe Tomography (APT) has emerged as a reliable chemical analysis technique as it provides access to the chemical composition of the analyzed material together with the 3D distribution of the atoms in a tip-shaped specimen with hundred-nanometer diameter. Moreover, combining APT with EDX enables first to overcome some artefacts inherent to APT to get quantitative data but also permits to investigate nanostructures from nano-to micro-scale. We have successfully applied these techniques for studying both n-type (Ge) and p-type (Mg) doping of AlGaN layers

    Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

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    The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 × 1019 cm-3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 × 1020 cm-3, despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential

    Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

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    Correlation between off-axis electron holography and atom probe tomography (APT) provides morphological, chemical and electrical information about Mg doping (p-type) in gallium nitride (GaN) layers that have been grown at different temperatures at a nanometric scale. APT allows access to the three-dimensional distribution of atoms and their chemical nature. In particular, this technique allows visualisation of the Mg-rich clusters observed in p-doped GaN layers grown by metal-organic chemical vapour deposition. As the layer growth temperature increases, the cluster density decreases but their size indicted by the number of atoms increases. Moreover, APT reveals that threading dislocations are decorated with Mg atoms. Off-axis electron holography provides complementary information about the electrical activity of the Mg doping. As only a small fraction of dopant atoms are ionised at room temperature, this fraction is increased by annealing the specimen to 400 °C in situ in a transmission electron microscope (TEM). A strong reduction of the dopant electrical activity is observed for increases in the layer growth temperature. The correlation of APT with TEM-based techniques was shown to be a unique approach in order to investigate how the growth temperature affects both the chemical distribution and electrical activity of Mg dopant atoms
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