Structural, Electronic, and Optical Properties of CsPb(Br1−xClx)3 Perovskite: First-Principles Study with PBE–GGA and mBJ–GGA Methods

The effect of halide composition on the structural, electronic, and optical properties of CsPb(Br1−xClx)3 perovskite was investigated in this study. When the chloride (Cl) content of x was increased, the unit cell volume decreased with a linear function. Theoretical X-ray diffraction analyses showed that the peak (at 2θ = 30.4°) shifts to a larger angle (at 2θ = 31.9°) when the average fraction of the incorporated Cl increased. The energy bandgap (Eg) was observed to increase with the increase in Cl concentration. For x = 0.00, 0.25, 0.33, 0.50, 0.66, 0.75, and 1.00, the Eg values calculated using the Perdew–Burke–Ernzerhof potential were between 1.53 and 1.93 eV, while those calculated using the modified Becke−Johnson generalized gradient approximation (mBJ–GGA) potential were between 2.23 and 2.90 eV. The Eg calculated using the mBJ–GGA method best matched the experimental values reported. The effective masses decreased with a concentration increase of Cl to 0.33 and then increased with a further increase in the concentration of Cl. Calculated photoabsorption coefficients show a blue shift of absorption at higher Cl content. The calculations indicate that CsPb(Br1−xClx)3 perovskite could be used in optical and optoelectronic devices by partly replacing bromide with chloride

Surface Passivation for Promotes Bi-Excitonic Amplified Spontaneous Emission in CsPb(Br/Cl)₃ Perovskite at Room Temperature

Perovskite-type lead halides exhibit promising performances in optoelectronic applications, for which lasers are one of the most promising applications. Although the bulk structure has some advantages, perovskite has additional advantages at the nanoscale owing to its high crystallinity given by a lower trap density. Although the nanoscale can produce efficient light emission, its comparatively poor chemical and colloidal stability limits further development of devices based on this material. Nevertheless, bulk perovskites are promising as optical amplifiers. There has been some developmental progress in the study of optical response and amplified spontaneous emission (ASE) as a benchmark for perovskite bulk phase laser applications. Therefore, to achieve high photoluminescence quantum yields (PLQYs) and large optical gains, material development is essential. One of the aspects in which these goals can be achieved is the incorporation of a bulk structure of high-quality crystallization films based on inorganic perovskite, such as cesium lead halide (CsPb(Br/Cl)3), in polymethyl methacrylate (PMMA) polymer and encapsulation with the optimal thickness of the polymer to achieve complete surface coverage, prevent degradation, surface states, and surface defects, and suppress emission at depth. Sequential evaporation of the perovskite precursors using a single-source thermal evaporation technique (TET) effectively deposited two layers. The PL and ASEs of the bare and modified films with a thickness of 400 nm PMMA were demonstrated. The encapsulation layer maintained the quantum yield of the perovskite layer in the air for more than two years while providing added optical gain compared to the bare film. Under a picosecond pulse laser, the PL wavelength of single excitons and ASE wavelength associated with the stimulated decay of bi-excitons were achieved. The two ASE bands were highly correlated and competed with each other; they were classified as exciton and bi-exciton recombination, respectively. According to the ASE results, bi-exciton emission could be observed in an ultrastable CsPb(Br/Cl)3 film modified by PMMA with a very low excitation energy density of 110 µJ/cm2. Compared with the bare film, the ASE threshold was lowered by approximately 5%. A bi-exciton has a binding energy (26.78 meV) smaller than the binding energy of the exciton (70.20 meV)

Single-Source Thermal Evaporation Growth and the Tuning Surface Passivation Layer Thickness Effect in Enhanced Amplified Spontaneous Emission Properties of CsPb(Br0.5Cl0.5)3 Perovskite Films

High-quality inorganic cesium lead halide perovskite CsPb(Br0.5Cl0.5)3 thin films were successfully achieved through evaporation of the precursors and deposition sequentially by a single-source thermal evaporation system. The different melting points of the precursors were enabled us to evaporate precursors one by one in one trip. The resulting films through its fabrication were smooth and pinhole-free. Furthermore, this technique enabled complete surface coverage by high-quality perovskite crystallization and more moisture stability oppositely of that produce by solution-processed. Then the perovskite films were encapsulated by evaporated a polymethyl methacrylate (PMMA) polymer as a specialized surface passivation approach with various thicknesses. The blue emission, high photoluminescence quantum yield (PLQY), stable, and low threshold of amplified spontaneous emission (ASE) properties of CsPb(Br0.5Cl0.5)3 films in the bulk structure at room temperature were achieved. The effects of the surface-passivation layer and its thickness on the optical response were examined. Detailed analysis of the dependence of ASE properties on the surface passivation layer thickness was performed, and it was determined this achieves performance optimization. The ASE characteristics of bare perovskite thin film were influenced by the incorporation of the PMMA with various thicknesses. The improvement to the surface layer of perovskite thin films compared to that of the bare perovskite thin film was attributed to the combination of thermal evaporation deposition and surface encapsulation. The best results were achieved when using a low PMMA thickness up to 100 nm and reducing the ASE threshold by ~11 μJ/cm2 when compared with free-encapsulation and by ~13 μJ/cm2 when encapsulation occurs at 200 nm or thicker. Compared to the bare CsPb(Br0.5Cl0.5)3, ASE reduced 1.1 times when the PMMA thickness was 100 nm

Ultra-Stable Polycrystalline CsPbBr3 Perovskite–Polymer Composite Thin Disk for Light-Emitting Applications

Organic–inorganic halide organometal perovskites have demonstrated very promising performance in optoelectronic applications, but their relatively poor chemical and colloidal stability hampers the further improvement of devices based on these materials. Perovskite material engineering is crucial for achieving high photoluminescence quantum yields (PLQYs) and long stability. Herein, these goals are attained by incorporating bulk-structure CsPbBr3, which prevents colloidal degradation, into polymethyl methacrylate (PMMA) polymer in thin-disk form. This technology can potentially realize future disk lasers with no optical and structural contributions from the polymer. The polycrystalline CsPbBr3 perovskite particles were simply obtained by using a mechanical processing technique. The CsPbBr3 was then incorporated into the PMMA polymer using a solution blending method. The polymer enhanced the PLQYs by removing the surface trap states and increasing the water resistance and stability under ambient conditions. In our experimental investigation, the CsPbBr3/PMMA composites were extraordinarily stable and remained strongly luminescent after water immersion for three months and air exposure for over one year, maintaining 80% of their initial photoluminescence intensity. The CsPbBr3/PMMA thin disk produced amplified spontaneous emission for a long time in air and for more than two weeks in water

[1,2-Bis(diphenylphosphanyl)ethane-κ2P,P′]dichloridopalladium(II) dimethyl sulfoxide monosolvate

In the title compound, [PdCl2(C26H24P2)]·C2H6OS, the PdII atom adopts a distorted cis-PdCl2P2 square-planar coordination geometry. The five-membered chelate ring adopts an envelope conformation with a methylene C atom in the flap position. The S and C atoms of the dimethyl sulfoxide (DMSO) solvent molecule are disordered over two sets of sites in a 0.8976 (18):0.1024 (18) ratio. The DMSO O atom accepts three C—H...O hydrogen bonds from an adjacent complex molecule

Solvent Effects on the Structural and Optical Properties of MAPbI3 Perovskite Thin Film for Photovoltaic Active Layer

Controlling the crystallinity, homogeneity, and surface morphology is an efficient method of enhancing the perovskite layer. These improvements contribute toward the optimization of perovskite film morphology for its use in high-performance photovoltaic applications. Here, different solvents will be used in order to process the perovskite precursor, to improve the interfacial contacts through generating a smooth film and uniform crystal domains with large grains. The effect that the solvent has on the optical and structural properties of spin-coated methyl ammonium lead iodide (MAPbI3) perovskite thin films prepared using a single-step method was systematically investigated. The spin-coating parameters and precursor concentrations of MAI and PbI2 were optimized to produce uniform thin films using the different solvents N, N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and γ-butyrolactone (GBL). The effect that the solvent has on the morphology of the MAPbI3 films was examined to determine how the materials can be structurally altered to make them highly efficient for use in perovskite hybrid photovoltaic applications. Scanning electron microscopy (SEM) and X-ray diffractometry (XRD) results show that the synthesized MAPbI3 films prepared using DMSO, DMF, and GBL exhibit the best crystallinity and optical characteristics (photoluminescence (PL)), respectively, of the prepared films. The optical properties resulting from the noticeable improvement PL of the films can be clearly correlated with their crystallinity, depending on the solvents used in their preparation. The film prepared in DMSO shows the highest transmittance and the highest bandgap energy of the prepared films

Reducing Amplified Spontaneous Emission Threshold in CsPbBr3 Quantum Dot Films by Controlling TiO2 Compact Layer

Amplified spontaneous emission (ASE) threshold in CsPbBr3 quantum dot films is systematically reduced by introducing high quality TiO2 compact layer grown by atomic-layer deposition. Uniform and pinhole-free TiO2 films of thickness 10, 20 and 50 nm are used as a substrates for CsPbBr3 quantum dot films to enhance amplified spontaneous emission performance. The reduction is attributed indirectly to the improved morphology of TiO2 compact layer and subsequently CsPbBr3 active layer as grown on better quality substrates. This is quantified by the reduced roughness of the obtained films to less than 5 nm with 50 nm TiO2 substrate. Considering the used growth method for the quantum dot film, the improved substrate morphology maintains better the structure of the used quantum dots in the precursor solution. This results in better absorption and hence lower threshold of ASE. Besides that, the improved film quality results further in reducing light scattering and hence additional slight optical enhancement. The work demonstrates a potential venue to reduce the amplified spontaneous emission threshold of quantum dot films and therefore enhanced their optical performance

Enhancement of Light Amplification of CsPbBr3 Perovskite Quantum Dot Films via Surface Encapsulation by PMMA Polymer

Photonic devices based on perovskite materials are considered promising alternatives for a wide range of these devices in the future because of their broad bandgaps and ability to contribute to light amplification. The current study investigates the possibility of improving the light amplification characteristics of CsPbBr3 perovskite quantum dot (PQD) films using the surface encapsulation technique. To further amplify emission within a perovskite layer, CsPbBr3 PQD films were sandwiched between two transparent layers of poly(methyl methacrylate) (PMMA) to create a highly flexible PMMA/PQD/PMMA waveguide film configuration. The prepared perovskite film, primed with a polymer layer coating, shows a marked improvement in both emission efficiency and amplified spontaneous emission (ASE)/laser threshold compared with bare perovskite films on glass substrates. Additionally, significantly improved photoluminescence (PL) and long decay lifetime were observed. Consequently, under pulse pumping in a picosecond duration, ASE with a reduction in ASE threshold of ~1.2 and 1.4 times the optical pumping threshold was observed for PQDs of films whose upper face was encapsulated and embedded within a cavity comprising two PMMA reflectors, respectively. Moreover, the exposure stability under laser pumping was greatly improved after adding the polymer coating to the top face of the perovskite film. Finally, this process improved the emission and PL in addition to enhancements in exposure stability. These results were ascribed in part to the passivation of defects in the perovskite top surface, accounting for the higher PL intensity, the slower PL relaxation, and for about 14 % of the ASE threshold decrease

Phase State Influence on Photoluminescence of MAPb(Br_xI_1−x)₃ Perovskites towards Optimized Photonics Applications

Perovskite halide has many advantages that attracted the attention of researchers in the last years, but many challenges prevent the use of halide perovskites in different applications. One of these challenges is the low thermal stability resulting in phase transitions with temperatures. Here, the photoluminescence (PL) characteristics and related phase transitions of different CH3NH3Pb(BrxI1−x)3 (MA(BrxI1−x)3)3 perovskites structures have been investigated under a wide temperature range. The work that has been conducted demonstrates that under temperature, the exciton behavior of the halide anions, I and Br, has a considerable impact on structural phases and the fluorescence process. The obtained results for the temperature dependence of PL for MAPb(BrxI1−x)3 showed a wide range of emission wavelengths, between 500–800 nm with a decrease in PL intensity with increasing temperature. In addition, the ratio of both bromine and iodine in MAPb(BrxI1−x)3 affects the range of phase transition temperatures, where at x = 0.00, 0.25, and 0.50 the first transition occurs below room temperature (orthorhombic to tetragonal) phase and the other occurs above room temperature (tetragonal to cubic) phase. Furthermore, increasing the proportion of bromine causes all the transitions to occur below room temperature. The presented findings suggest a suitable halide component under a temperature-controlled phase transformation to benefit these materials in photonics devices