Co-doping effect on the microstructural and electrical properties of barium stannate materials

Proton-conducting perovskite oxides are of considerable interest to researchers as promising electrolytes for low- and intermediate solid oxide electrochemical cells. Therefore, designing new potential proton-conducting phases and improving the functional properties of known materials are of great importance from both fundamental and applied viewpoints. In the present work, BaSnO3 was selected as a reference proton-conducting system and then a co-doping strategy was employed to analyze ‘composition – structure – microstructure – transport properties’ relationships. To perform such an analysis, the properties of previously studied BaSn0.7M0.3O3–δ (M = In, Sc, Y) compounds were compared here to their co-doped derivatives, BaSn0.7In0.15Sc0.15O3–δ, BaSn0.7Y0.15Sc0.15O3–δ, and BaSn0.7In0.15Y0.15O3–δ. It is found that the type of dopant affects the materials sinterability, when more coarse-crystalline ceramics are formed with increasing the average ionic radii at the Sn-position. The introduction of Y3+-cations reduces both ionic and hole conductivities compared to single-doped with In3+ or Sc3+ barium stannate materials. However, simultaneous doping with In3+/Sc3+ cations minimizes the contribution of hole conductivity compared to that of Sc-doped barium stannate with the same acceptor dopant concentration.https://doi.org/10.15826/elmattech.2024.3.03

Charge and matter distributions and form factors of light, medium and heavy neutron-rich nuclei

Results of charge form factors calculations for several unstable neutron-rich isotopes of light, medium and heavy nuclei (He, Li, Ni, Kr, Sn) are presented and compared to those of stable isotopes in the same isotopic chain. For the lighter isotopes (He and Li) the proton and neutron densities are obtained within a microscopic large-scale shell-model, while for heavier ones Ni, Kr and Sn the densities are calculated in deformed self-consistent mean-field Skyrme HF+BCS method. We also compare proton densities to matter densities together with their rms radii and diffuseness parameter values. Whenever possible comparison of form factors, densities and rms radii with available experimental data is also performed. Calculations of form factors are carried out both in plane wave Born approximation (PWBA) and in distorted wave Born approximation (DWBA). These form factors are suggested as predictions for the future experiments on the electron-radioactive beam colliders where the effect of the neutron halo or skin on the proton distributions in exotic nuclei is planned to be studied and thereby the various theoretical models of exotic nuclei will be tested.Comment: 26 pages, 11 figures, 3 tables, accepted for publication in Phys. Rev.

Identification of new transitions and mass assignments of levels in 143−153^{143-153}Pr

The previously reported levels assigned to 151,152,153Pr have recently been called into question regarding their mass assignment. The above questioned level assignments are clarified by measuring g-transitions tagged with A and Z in an in-beam experiment in addition to the measurements from 252Cf spontaneous fission (SF) and establish new spectroscopic information from $N=84$ to $N=94$ in the Pr isotopic chain. The isotopic chain 143-153Pr has been studied from the spontaneous fission of 252Cf by using Gammasphere and also from the measurement of the prompt g-rays in coincidence with isotopically-identified fission fragments using VAMOS++ and EXOGAM at GANIL. The latter were produced using 238U beams on a 9Be target at energies around the Coulomb barrier. The g-g-g-g data from 252Cf (SF) and those from the GANIL in-beam A- and Z-gated spectra were combined to unambiguously assign the various transitions and levels in 151,152,153Pr and other isotopes. New transitions and bands in 145,147,148,149,150Pr were identified by using g-g-g and g-g-g-g coincidences and A and Z gated g-g spectra. The transitions and levels previously assigned to 151,153Pr have been confirmed by the (A,Z) gated spectra. The transitions previously assigned to 152Pr are now assigned to 151Pr on the basis of the (A,Z) gated spectra. Two new bands with 20 new transitions in 152Pr and one new band with 7 new transitions in 153Pr are identified from the g-g-g-g coincidence spectra and the (A,Z) gated spectrum. In addition, new g-rays are also reported in 143-146Pr. New levels of 145,147-153Pr have been established, reliable mass assignments of the levels in 151,152,153Pr have been reported and new transitions have been identified in 143-146Pr showing the new avenues that are opened by combining the two experimental approaches.Comment: Accepted in Phys. Rev.

Zinc Finger Recombinases with Adaptable DNA Sequence Specificity

Site-specific recombinases have become essential tools in genetics and molecular biology for the precise excision or integration of DNA sequences. However, their utility is currently limited to circumstances where the sites recognized by the recombinase enzyme have been introduced into the DNA being manipulated, or natural ‘pseudosites’ are already present. Many new applications would become feasible if recombinase activity could be targeted to chosen sequences in natural genomic DNA. Here we demonstrate efficient site-specific recombination at several sequences taken from a 1.9 kilobasepair locus of biotechnological interest (in the bovine β-casein gene), mediated by zinc finger recombinases (ZFRs), chimaeric enzymes with linked zinc finger (DNA recognition) and recombinase (catalytic) domains. In the "Z-sites" tested here, 22 bp casein gene sequences are flanked by 9 bp motifs recognized by zinc finger domains. Asymmetric Z-sites were recombined by the concomitant action of two ZFRs with different zinc finger DNA-binding specificities, and could be recombined with a heterologous site in the presence of a third recombinase. Our results show that engineered ZFRs may be designed to promote site-specific recombination at many natural DNA sequences

Mycobacterium tuberculosis ClpP Proteases Are Co-transcribed but Exhibit Different Substrate Specificities

PMCID: PMC3613350This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited

Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon

We realize growth of self-catalyzed core-shell GaAs/GaAsP nanowires (NWs) on Si substrates using molecular-beam epitaxy. Transmission electron microscopy (TEM) of single GaAs/GaAsP NWs confirms their high crystal quality and shows domination of the zinc-blende phase. This is further confirmed in optics of single NWs, studied using cw and time-resolved photoluminescence (PL). A detailed comparison with uncapped GaAs NWs emphasizes the effect of the GaAsP capping in suppressing the non-radiative surface states: significant PL enhancement in the core-shell structures exceeding 2000 times at 10K is observed; in uncapped NWs PL is quenched at 60K whereas single core-shell GaAs/GaAsP NWs exhibit bright emission even at room temperature. From analysis of the PL temperature dependence in both types of NW we are able to determine the main carrier escape mechanisms leading to the PL quench

Electro-elastic tuning of single particles in individual self-assembled quantum dots

We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 micro-eV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.Comment: 16 pages, 4 figures, 1 table. Final versio

Enhanced sequential carrier capture into individual quantum dots and quantum posts controlled by surface acoustic waves

Individual self-assembled Quantum Dots and Quantum Posts are studied under the influence of a surface acoustic wave. In optical experiments we observe an acoustically induced switching of the occupancy of the nanostructures along with an overall increase of the emission intensity. For Quantum Posts, switching occurs continuously from predominantely charged excitons (dissimilar number of electrons and holes) to neutral excitons (same number of electrons and holes) and is independent on whether the surface acoustic wave amplitude is increased or decreased. For quantum dots, switching is non-monotonic and shows a pronounced hysteresis on the amplitude sweep direction. Moreover, emission of positively charged and neutral excitons is observed at high surface acoustic wave amplitudes. These findings are explained by carrier trapping and localization in the thin and disordered two-dimensional wetting layer on top of which Quantum Dots nucleate. This limitation can be overcome for Quantum Posts where acoustically induced charge transport is highly efficient in a wide lateral Matrix-Quantum Well.Comment: 11 pages, 5 figure

Engineering of quantum dot photon sources via electro-elastic fields

The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces behind ongoing research on the study of semiconductor quantum dots. Often referred to as artificial atoms, quantum dots can generate single and entangled photons on demand and, unlike their natural counterpart, can be easily integrated into well-established optoelectronic devices. However, the inherent random nature of the quantum dot growth processes results in a lack of control of their emission properties. This represents a major roadblock towards the exploitation of these quantum emitters in the foreseen applications. This chapter describes a novel class of quantum dot devices that uses the combined action of strain and electric fields to reshape the emission properties of single quantum dots. The resulting electro-elastic fields allow for control of emission and binding energies, charge states, and energy level splittings and are suitable to correct for the quantum dot structural asymmetries that usually prevent these semiconductor nanostructures from emitting polarization-entangled photons. Key experiments in this field are presented and future directions are discussed.Comment: to appear as a book chapter in a compilation "Engineering the Atom-Photon Interaction" published by Springer in 2015, edited by A. Predojevic and M. W. Mitchel

Loss of DNA methyltransferase activity in primed human ES cells triggers increased cell-cell variability and transcriptional repression

Maintenance of pluripotency and specification towards a new cell fate are both dependent on precise interactions between extrinsic signals and transcriptional and epigenetic regulators. Directed methylation of cytosines by the de novo methyltransferases DNMT3A and DNMT3B plays an important role in facilitating proper differentiation, whereas DNMT1 is essential for maintaining global methylation levels in all cell types. Here, we generated single-cell mRNA expression data from wild-type, DNMT3A, DNMT3A/3B and DNMT1 knockout human embryonic stem cells and observed a widespread increase in cellular and transcriptional variability, even with limited changes in global methylation levels in the de novo knockouts. Furthermore, we found unexpected transcriptional repression upon either loss of the de novo methyltransferase DNMT3A or the double knockout of DNMT3A/3B that is further propagated upon differentiation to mesoderm and ectoderm. Taken together, our single-cell RNA-sequencing data provide a high-resolution view into the consequences of depleting the three catalytically active DNMTs in human pluripotent stem cells