GaInN vertical-structure light-emitting diodes on bulk GaN substrate with optical enhancement technique: omnidirectional reflectors and surface texture treatment

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Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes

We demonstrate GaInN multiple quantum well (MQW) light-emitting diodes (LEDs) having ternary GaInN quantum barriers (QBs) instead of conventional binary GaN QBs for a reduced polarization mismatch between QWs and QBs and an additional separate confinement of carriers to the MQW active region. In comparison with GaInN LEDs with conventional GaN QBs, the GaInN/GaInN LEDs show a reduced blueshift of the peak wavelength with increasing injection current and a reduced forward voltage. In addition, we investigate the density of pits emerging on top of the MQW layer that are correlated with V-defects and act as a path for the reverse leakage current. The GaInN/GaInN MQW structure has a lower pit density than the GaInN/GaN MQW structure as well as a lower reverse leakage current. Finally, the GaInN/GaInN MQW LEDs show higher light output power and external quantum efficiency at high injection currents compared to the conventional GaInN/GaN MQW LEDs. We attribute these results to the reduced polarization mismatch and the reduced lattice mismatch in the GaInN/GaInN MQW active region.open1122sciescopu

Matching material polarization in GaInN light-emitting diodes – A novel concept for enhancing performance and reducing efficiency droop

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Elimination of total internal reflection in GaInN light-emitting diodes by graded-refractive-index micro-pillars

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